Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency
We have improved a compact model for the injection-enhancedinsulated-gate bipolar transistor for inverter circuit simulation. The holeaccumulation of floating-base region and potential change are modeled. It turned out that negative capacitance which occurs by floating-base region has the dependence...
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| Veröffentlicht in: | IEICE Transactions on Electronics 2014/10/01, Vol.E97.C(10), pp.1021-1027 |
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| container_title | IEICE Transactions on Electronics |
| container_volume | E97.C |
| creator | YAMAMOTO, Takao MIYAKE, Masataka FELDMANN, Uwe MATTAUSCH, Hans JÜRGEN MIURA-MATTAUSCH, Mitiko |
| description | We have improved a compact model for the injection-enhancedinsulated-gate bipolar transistor for inverter circuit simulation. The holeaccumulation of floating-base region and potential change are modeled. It turned out that negative capacitance which occurs by floating-base region has the dependence of frequency. It is necessary to consider the frequency dependence of the total gate capacitance for transient simulation. We analyzed the relationship between negative gate capacitance and current rise rate at the switch turn-on timing and device structure. The development model simulation result is well reproduced Ic and Vce of measurement data, and the switching loss calculation accuracy is improved. |
| doi_str_mv | 10.1587/transele.E97.C.1021 |
| format | Article |
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The holeaccumulation of floating-base region and potential change are modeled. It turned out that negative capacitance which occurs by floating-base region has the dependence of frequency. It is necessary to consider the frequency dependence of the total gate capacitance for transient simulation. We analyzed the relationship between negative gate capacitance and current rise rate at the switch turn-on timing and device structure. 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The development model simulation result is well reproduced Ic and Vce of measurement data, and the switching loss calculation accuracy is improved.</description><subject>Capacitance</subject><subject>Circuits</subject><subject>compact model</subject><subject>Computer simulation</subject><subject>Gates (circuits)</subject><subject>HiSIM</subject><subject>IGBT</subject><subject>Insulated gate bipolar transistors</subject><subject>Optimization</subject><subject>SPICE</subject><subject>Switches</subject><subject>Switching</subject><issn>0916-8524</issn><issn>1745-1353</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNplkEtv2zAQhIkiAeI8fkEuOuYilytKlHRsBMdNkSKHPK7EmiJtGjKpkHQC99eXrlsjQC-7i8V8M8AQcg10ClVTf40ebVCDms7aetpNgRbwhUygLqscWMVOyIS2wPOmKsozch7CmlJoCmAT8t65zYgyZj9drwZjl5nT2b1dKxmNs9nMrtBK1adX2A4Y0zVPM7s1oxvQZ8_7YBOi89krDqbPdLoex2g25hf-cUh2Tx8mytXe-86rt62ycndJTjUOQV393Rfk5W723H3PHx7n9923h1xWADGvKQfd87LXi6altNayRY6lbKGUnIFqJSsUbRX0UrNG8qakGoEuOG_5giJlF-Tm4Dt6l5JDFBsTpBoGtMptg4CaF0BrYE2SsoNUeheCV1qM3mzQ7wRQsW9Z_GtZpJZFJ_YtJ-rHgVqHiEt1ZNBHI5P0P-YTfBTJFXqhLPsNnm6PpA</recordid><startdate>20140101</startdate><enddate>20140101</enddate><creator>YAMAMOTO, Takao</creator><creator>MIYAKE, Masataka</creator><creator>FELDMANN, Uwe</creator><creator>MATTAUSCH, Hans JÜRGEN</creator><creator>MIURA-MATTAUSCH, Mitiko</creator><general>The Institute of Electronics, Information and Communication Engineers</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20140101</creationdate><title>Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency</title><author>YAMAMOTO, Takao ; MIYAKE, Masataka ; FELDMANN, Uwe ; MATTAUSCH, Hans JÜRGEN ; MIURA-MATTAUSCH, Mitiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c511t-7061fd64dfb89007fc9a6a4c914c631e9c32e09e1dcf38c6840fa10b6696b0a03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Capacitance</topic><topic>Circuits</topic><topic>compact model</topic><topic>Computer simulation</topic><topic>Gates (circuits)</topic><topic>HiSIM</topic><topic>IGBT</topic><topic>Insulated gate bipolar transistors</topic><topic>Optimization</topic><topic>SPICE</topic><topic>Switches</topic><topic>Switching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>YAMAMOTO, Takao</creatorcontrib><creatorcontrib>MIYAKE, Masataka</creatorcontrib><creatorcontrib>FELDMANN, Uwe</creatorcontrib><creatorcontrib>MATTAUSCH, Hans JÜRGEN</creatorcontrib><creatorcontrib>MIURA-MATTAUSCH, Mitiko</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEICE Transactions on Electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>YAMAMOTO, Takao</au><au>MIYAKE, Masataka</au><au>FELDMANN, Uwe</au><au>MATTAUSCH, Hans JÜRGEN</au><au>MIURA-MATTAUSCH, Mitiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency</atitle><jtitle>IEICE Transactions on Electronics</jtitle><addtitle>IEICE Trans. Electron.</addtitle><date>2014-01-01</date><risdate>2014</risdate><volume>E97.C</volume><issue>10</issue><spage>1021</spage><epage>1027</epage><pages>1021-1027</pages><issn>0916-8524</issn><eissn>1745-1353</eissn><abstract>We have improved a compact model for the injection-enhancedinsulated-gate bipolar transistor for inverter circuit simulation. The holeaccumulation of floating-base region and potential change are modeled. It turned out that negative capacitance which occurs by floating-base region has the dependence of frequency. It is necessary to consider the frequency dependence of the total gate capacitance for transient simulation. We analyzed the relationship between negative gate capacitance and current rise rate at the switch turn-on timing and device structure. 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| source | J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese |
| subjects | Capacitance Circuits compact model Computer simulation Gates (circuits) HiSIM IGBT Insulated gate bipolar transistors Optimization SPICE Switches Switching |
| title | Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency |
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