Fabrication of Niobium Nanobridge Josephson Junctions

To realize antenna-coupled Josephson detectors for microwave and millimeter-wave radiation, planar-type Nb nanobridge Josephson junctions were fabricated. Nb thin films whose thickness, the root mean square roughness and the critical temperature were 20.0 nm, 0.109 nm and 8.4 K, respectively were de...

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Veröffentlicht in:Journal of physics. Conference series 2014-05, Vol.507 (4), p.42041-4
Hauptverfasser: Tachiki, T, Horiguchi, K, Uchida, T
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Horiguchi, K
Uchida, T
description To realize antenna-coupled Josephson detectors for microwave and millimeter-wave radiation, planar-type Nb nanobridge Josephson junctions were fabricated. Nb thin films whose thickness, the root mean square roughness and the critical temperature were 20.0 nm, 0.109 nm and 8.4 K, respectively were deposited using a DC magnetron sputtering at a substrate temperature of 700°C. Nanobridges were obtained from the film using 80-kV electron beam lithography and reactive ion-beam etching in CF4 (90%) + O2 (10%) gases. The minimum bridge area was 65 nm wide and 60 nm long. For the nanobridge whose width and length were less than 110 nm, an I-V characteristic showed resistively-shunted-junction behaviour near the critical temperature. Moreover, Shapiro steps were observed in the nanobridge with microwave irradiation at a frequency of 6 – 30 GHz. The Nb nanobridges can be used as detectors in the antenna-coupled devices.
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subjects Antennas
Critical temperature
Current voltage characteristics
Detectors
Electron beam lithography
Ion beams
Josephson junctions
Magnetron sputtering
Microwaves
Millimeter waves
Nanostructure
Niobium
Physics
Substrates
Thickness
Thin films
Transition temperature
title Fabrication of Niobium Nanobridge Josephson Junctions
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