Fabrication of Niobium Nanobridge Josephson Junctions
To realize antenna-coupled Josephson detectors for microwave and millimeter-wave radiation, planar-type Nb nanobridge Josephson junctions were fabricated. Nb thin films whose thickness, the root mean square roughness and the critical temperature were 20.0 nm, 0.109 nm and 8.4 K, respectively were de...
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Veröffentlicht in: | Journal of physics. Conference series 2014-05, Vol.507 (4), p.42041-4 |
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creator | Tachiki, T Horiguchi, K Uchida, T |
description | To realize antenna-coupled Josephson detectors for microwave and millimeter-wave radiation, planar-type Nb nanobridge Josephson junctions were fabricated. Nb thin films whose thickness, the root mean square roughness and the critical temperature were 20.0 nm, 0.109 nm and 8.4 K, respectively were deposited using a DC magnetron sputtering at a substrate temperature of 700°C. Nanobridges were obtained from the film using 80-kV electron beam lithography and reactive ion-beam etching in CF4 (90%) + O2 (10%) gases. The minimum bridge area was 65 nm wide and 60 nm long. For the nanobridge whose width and length were less than 110 nm, an I-V characteristic showed resistively-shunted-junction behaviour near the critical temperature. Moreover, Shapiro steps were observed in the nanobridge with microwave irradiation at a frequency of 6 – 30 GHz. The Nb nanobridges can be used as detectors in the antenna-coupled devices. |
doi_str_mv | 10.1088/1742-6596/507/4/042041 |
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Nb thin films whose thickness, the root mean square roughness and the critical temperature were 20.0 nm, 0.109 nm and 8.4 K, respectively were deposited using a DC magnetron sputtering at a substrate temperature of 700°C. Nanobridges were obtained from the film using 80-kV electron beam lithography and reactive ion-beam etching in CF4 (90%) + O2 (10%) gases. The minimum bridge area was 65 nm wide and 60 nm long. For the nanobridge whose width and length were less than 110 nm, an I-V characteristic showed resistively-shunted-junction behaviour near the critical temperature. Moreover, Shapiro steps were observed in the nanobridge with microwave irradiation at a frequency of 6 – 30 GHz. The Nb nanobridges can be used as detectors in the antenna-coupled devices.</description><identifier>ISSN: 1742-6596</identifier><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/507/4/042041</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Antennas ; Critical temperature ; Current voltage characteristics ; Detectors ; Electron beam lithography ; Ion beams ; Josephson junctions ; Magnetron sputtering ; Microwaves ; Millimeter waves ; Nanostructure ; Niobium ; Physics ; Substrates ; Thickness ; Thin films ; Transition temperature</subject><ispartof>Journal of physics. Conference series, 2014-05, Vol.507 (4), p.42041-4</ispartof><rights>2014. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). 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Nb thin films whose thickness, the root mean square roughness and the critical temperature were 20.0 nm, 0.109 nm and 8.4 K, respectively were deposited using a DC magnetron sputtering at a substrate temperature of 700°C. Nanobridges were obtained from the film using 80-kV electron beam lithography and reactive ion-beam etching in CF4 (90%) + O2 (10%) gases. The minimum bridge area was 65 nm wide and 60 nm long. For the nanobridge whose width and length were less than 110 nm, an I-V characteristic showed resistively-shunted-junction behaviour near the critical temperature. Moreover, Shapiro steps were observed in the nanobridge with microwave irradiation at a frequency of 6 – 30 GHz. The Nb nanobridges can be used as detectors in the antenna-coupled devices.</description><subject>Antennas</subject><subject>Critical temperature</subject><subject>Current voltage characteristics</subject><subject>Detectors</subject><subject>Electron beam lithography</subject><subject>Ion beams</subject><subject>Josephson junctions</subject><subject>Magnetron sputtering</subject><subject>Microwaves</subject><subject>Millimeter waves</subject><subject>Nanostructure</subject><subject>Niobium</subject><subject>Physics</subject><subject>Substrates</subject><subject>Thickness</subject><subject>Thin films</subject><subject>Transition temperature</subject><issn>1742-6596</issn><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNpdkE1LxDAQhoMouK7-BSl48VKb70mPsrjqsqwXPYc0TbXLblOT9uC_N6Ui4lzegfdhGB6Ergm-I1ipggCnuRSlLASGgheYU8zJCVr8Fqd_9nN0EeMeY5YGFkisTRVaa4bWd5lvsl3rq3Y8ZjvT-VTU7y7b-Oj6j5j6zdjZCYyX6Kwxh-iufnKJ3tYPr6unfPvy-Ly63-aWAQx5bYgglW0cpw6UBeUsqykQaQWtagmMQoUVwaJumOQVE6UpsRNAS2WdYIQt0e18tw_-c3Rx0Mc2Wnc4mM75MWoCkuISVMkSevMP3fsxdOk7TQVIKRgjMlFypmzwMQbX6D60RxO-NMF6sqknUXoSpZNNzfVsk30Dzn5l_g</recordid><startdate>20140512</startdate><enddate>20140512</enddate><creator>Tachiki, T</creator><creator>Horiguchi, K</creator><creator>Uchida, T</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7U5</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>20140512</creationdate><title>Fabrication of Niobium Nanobridge Josephson Junctions</title><author>Tachiki, T ; Horiguchi, K ; Uchida, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c377t-da151bcfe42e78c78ec3d2716c52bd67327b08105df364b359a90e57298ce5313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Antennas</topic><topic>Critical temperature</topic><topic>Current voltage characteristics</topic><topic>Detectors</topic><topic>Electron beam lithography</topic><topic>Ion beams</topic><topic>Josephson junctions</topic><topic>Magnetron sputtering</topic><topic>Microwaves</topic><topic>Millimeter waves</topic><topic>Nanostructure</topic><topic>Niobium</topic><topic>Physics</topic><topic>Substrates</topic><topic>Thickness</topic><topic>Thin films</topic><topic>Transition temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tachiki, T</creatorcontrib><creatorcontrib>Horiguchi, K</creatorcontrib><creatorcontrib>Uchida, T</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>Journal of physics. Conference series</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tachiki, T</au><au>Horiguchi, K</au><au>Uchida, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of Niobium Nanobridge Josephson Junctions</atitle><jtitle>Journal of physics. Conference series</jtitle><date>2014-05-12</date><risdate>2014</risdate><volume>507</volume><issue>4</issue><spage>42041</spage><epage>4</epage><pages>42041-4</pages><issn>1742-6596</issn><issn>1742-6588</issn><eissn>1742-6596</eissn><abstract>To realize antenna-coupled Josephson detectors for microwave and millimeter-wave radiation, planar-type Nb nanobridge Josephson junctions were fabricated. Nb thin films whose thickness, the root mean square roughness and the critical temperature were 20.0 nm, 0.109 nm and 8.4 K, respectively were deposited using a DC magnetron sputtering at a substrate temperature of 700°C. Nanobridges were obtained from the film using 80-kV electron beam lithography and reactive ion-beam etching in CF4 (90%) + O2 (10%) gases. The minimum bridge area was 65 nm wide and 60 nm long. For the nanobridge whose width and length were less than 110 nm, an I-V characteristic showed resistively-shunted-junction behaviour near the critical temperature. Moreover, Shapiro steps were observed in the nanobridge with microwave irradiation at a frequency of 6 – 30 GHz. The Nb nanobridges can be used as detectors in the antenna-coupled devices.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1742-6596/507/4/042041</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Antennas Critical temperature Current voltage characteristics Detectors Electron beam lithography Ion beams Josephson junctions Magnetron sputtering Microwaves Millimeter waves Nanostructure Niobium Physics Substrates Thickness Thin films Transition temperature |
title | Fabrication of Niobium Nanobridge Josephson Junctions |
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