Influence of magneto-electric coefficient for magnetic and electric charge injection properties in magneto-electric MIS capacitors
We investigated the electric charge injection properties of a floating-gate type metal-insulator Si capacitor having different-ME gate insulators. The samples showed charge-injection type behaviour in capacitance-voltage curves, and it was revealed that the amount of injected charges can be controll...
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creator | Yokota, T Tsuboi, Y Imura, R Kito, S Gomi, M |
description | We investigated the electric charge injection properties of a floating-gate type metal-insulator Si capacitor having different-ME gate insulators. The samples showed charge-injection type behaviour in capacitance-voltage curves, and it was revealed that the amount of injected charges can be controlled by the application of an external magnetic field. The sample having a high-ME-coefficient gate insulator showed stepwise capacitance-voltage curves unlike the normal one. These results indicate that this capacitor, which employs a magnetic gate insulator, has the potential to be used in multilevel memory by the application of an external magnetic field. |
doi_str_mv | 10.1088/1757-899X/18/9/092003 |
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The samples showed charge-injection type behaviour in capacitance-voltage curves, and it was revealed that the amount of injected charges can be controlled by the application of an external magnetic field. The sample having a high-ME-coefficient gate insulator showed stepwise capacitance-voltage curves unlike the normal one. 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These results indicate that this capacitor, which employs a magnetic gate insulator, has the potential to be used in multilevel memory by the application of an external magnetic field.</description><subject>Capacitance</subject><subject>Capacitors</subject><subject>Charge injection</subject><subject>Electric charge</subject><subject>Electric potential</subject><subject>Gates</subject><subject>Insulators</subject><subject>Magnetic fields</subject><subject>Magnetic properties</subject><subject>Multilevel</subject><subject>Silicon</subject><subject>Voltage</subject><issn>1757-899X</issn><issn>1757-8981</issn><issn>1757-899X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqNkU9LxDAQxYMouK5-BKHgxYO1Sdqm6VEW_yyseFDBW8imkzVLN6lJ9-DVT26WLiq6B08zvPm94TGD0CnBlwRznpGqrFJe1y8Z4Vmd4ZpinO-h0Ze-_6M_REchLDFmVVHgEfqYWt2uwSpInE5WcmGhdym0oHpvVKIcaG2UAdsn2vktEAfSNsk39Sr9AhJjl1Ewziaddx343kCI4t-t99PHRMlOKtM7H47RgZZtgJNtHaPnm-unyV06e7idTq5mqSow69N5qXnsJGVNwagm80KDLnmj6JzlUgLIkqmSszzXtKobSohsZK5lqYEoxnA-RufD3pjubQ2hFysTFLSttODWQZCKUcwrQnlEz36hS7f2NqYTtGSkLgiraaTKgVLeheBBi86blfTvgmCx-YzYXF1sri4IF7UYPhN9ePAZ1_3bcrHDsgsVXaPzT7HQoI0</recordid><startdate>20111029</startdate><enddate>20111029</enddate><creator>Yokota, T</creator><creator>Tsuboi, Y</creator><creator>Imura, R</creator><creator>Kito, S</creator><creator>Gomi, M</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7SR</scope><scope>7TB</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>KR7</scope></search><sort><creationdate>20111029</creationdate><title>Influence of magneto-electric coefficient for magnetic and electric charge injection properties in magneto-electric MIS capacitors</title><author>Yokota, T ; Tsuboi, Y ; Imura, R ; Kito, S ; Gomi, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c406t-b5f8c40a26d462f1b4fef58dc2b63aaeea56c58633f279d211ada3fa5fe1c6603</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Capacitance</topic><topic>Capacitors</topic><topic>Charge injection</topic><topic>Electric charge</topic><topic>Electric potential</topic><topic>Gates</topic><topic>Insulators</topic><topic>Magnetic fields</topic><topic>Magnetic properties</topic><topic>Multilevel</topic><topic>Silicon</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yokota, T</creatorcontrib><creatorcontrib>Tsuboi, Y</creatorcontrib><creatorcontrib>Imura, R</creatorcontrib><creatorcontrib>Kito, S</creatorcontrib><creatorcontrib>Gomi, M</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>Proquest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>Access via ProQuest (Open Access)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Engineered Materials Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Civil Engineering Abstracts</collection><jtitle>IOP conference series. 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The samples showed charge-injection type behaviour in capacitance-voltage curves, and it was revealed that the amount of injected charges can be controlled by the application of an external magnetic field. The sample having a high-ME-coefficient gate insulator showed stepwise capacitance-voltage curves unlike the normal one. These results indicate that this capacitor, which employs a magnetic gate insulator, has the potential to be used in multilevel memory by the application of an external magnetic field.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1757-899X/18/9/092003</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Capacitance Capacitors Charge injection Electric charge Electric potential Gates Insulators Magnetic fields Magnetic properties Multilevel Silicon Voltage |
title | Influence of magneto-electric coefficient for magnetic and electric charge injection properties in magneto-electric MIS capacitors |
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