Impact of Total Ionizing Dose on Bulk Built-In Current Sensors with Dynamic Storage Cell
Integrated circuits operating in space and harsh radiation environments are subject to the progressive accumulation of Total Ionizing Dose (TID), as well as to Single Event Transients (SET) produced by single energetic particles. We designed Bulk Built-In Current Sensors with Dynamic Storage Cell (D...
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| Veröffentlicht in: | Journal of electronic testing 2015-08, Vol.31 (4), p.411-417 |
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| creator | Simionovski, Alexandre Vaz, Rafael G. Gonçalez, Odair L. Wirth, Gilson |
| description | Integrated circuits operating in space and harsh radiation environments are subject to the progressive accumulation of Total Ionizing Dose (TID), as well as to Single Event Transients (SET) produced by single energetic particles. We designed Bulk Built-In Current Sensors with Dynamic Storage Cell (DynBICS) to detect SET induced by ionizing radiation in NMOS and PMOS transistors. In this work the impact of TID on a complementary pair of DynBICS circuits is studied. The DynBICS were manufactured in IBM 130 nm technology and proved to be resistant to TID effects up to the limit of 600 krad (Si). The total dose reached in the test campaign was 616 krad (Si) from a
60
Co gamma source. The ability of the DynBICS to detect SET remained fairly stable, and the impact of the accumulated dose on the performance of the circuit is discussed in detail. |
| doi_str_mv | 10.1007/s10836-015-5537-1 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1762079830</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3823466721</sourcerecordid><originalsourceid>FETCH-LOGICAL-c419t-39f9b5a3b0ff2bc40ae7bcf2413e4b4fa82fff36b3e18f5ba29326edb86c7e7f3</originalsourceid><addsrcrecordid>eNp1kE9LwzAchoMoOKcfwFvAi5do_jRNe9TNP4WBh03wFpKazM42mUmLzE9vRj2I4OX3uzzPy8sLwDnBVwRjcR0JLliOMOGIcyYQOQATwgVDWFBxCCa4pAwVRGTH4CTGDU4O5fkEvFTdVtU99BaufK9aWHnXfDVuDec-GugdvB3a93SatkeVg7MhBON6uDQu-hDhZ9O_wfnOqa6p4bL3Qa0NnJm2PQVHVrXRnP38KXi-v1vNHtHi6aGa3SxQnZGyR6y0peaKaWwt1XWGlRG6tjQjzGQ6s6qg1lqWa2ZIYblWtGQ0N6-6yGthhGVTcDnmboP_GEzsZdfEOhVQzvghSiJyikVZMJzQiz_oxg_BpXaJIgWhPJGJIiNVBx9jMFZuQ9OpsJMEy_3Wctxapq3lfmtJkkNHJybWrU34lfyv9A2hfIEP</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1718125207</pqid></control><display><type>article</type><title>Impact of Total Ionizing Dose on Bulk Built-In Current Sensors with Dynamic Storage Cell</title><source>Springer Nature - Complete Springer Journals</source><creator>Simionovski, Alexandre ; Vaz, Rafael G. ; Gonçalez, Odair L. ; Wirth, Gilson</creator><creatorcontrib>Simionovski, Alexandre ; Vaz, Rafael G. ; Gonçalez, Odair L. ; Wirth, Gilson</creatorcontrib><description>Integrated circuits operating in space and harsh radiation environments are subject to the progressive accumulation of Total Ionizing Dose (TID), as well as to Single Event Transients (SET) produced by single energetic particles. We designed Bulk Built-In Current Sensors with Dynamic Storage Cell (DynBICS) to detect SET induced by ionizing radiation in NMOS and PMOS transistors. In this work the impact of TID on a complementary pair of DynBICS circuits is studied. The DynBICS were manufactured in IBM 130 nm technology and proved to be resistant to TID effects up to the limit of 600 krad (Si). The total dose reached in the test campaign was 616 krad (Si) from a
60
Co gamma source. The ability of the DynBICS to detect SET remained fairly stable, and the impact of the accumulated dose on the performance of the circuit is discussed in detail.</description><identifier>ISSN: 0923-8174</identifier><identifier>EISSN: 1573-0727</identifier><identifier>DOI: 10.1007/s10836-015-5537-1</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>CAE) and Design ; Circuits ; Circuits and Systems ; Computer-Aided Engineering (CAD ; Dynamics ; Electrical Engineering ; Energetic particles ; Engineering ; Integrated circuits ; Ionizing radiation ; Metal oxide semiconductors ; Radiation ; Semiconductor devices ; Sensors ; Silicon ; Storage</subject><ispartof>Journal of electronic testing, 2015-08, Vol.31 (4), p.411-417</ispartof><rights>Springer Science+Business Media New York 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c419t-39f9b5a3b0ff2bc40ae7bcf2413e4b4fa82fff36b3e18f5ba29326edb86c7e7f3</citedby><cites>FETCH-LOGICAL-c419t-39f9b5a3b0ff2bc40ae7bcf2413e4b4fa82fff36b3e18f5ba29326edb86c7e7f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10836-015-5537-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10836-015-5537-1$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Simionovski, Alexandre</creatorcontrib><creatorcontrib>Vaz, Rafael G.</creatorcontrib><creatorcontrib>Gonçalez, Odair L.</creatorcontrib><creatorcontrib>Wirth, Gilson</creatorcontrib><title>Impact of Total Ionizing Dose on Bulk Built-In Current Sensors with Dynamic Storage Cell</title><title>Journal of electronic testing</title><addtitle>J Electron Test</addtitle><description>Integrated circuits operating in space and harsh radiation environments are subject to the progressive accumulation of Total Ionizing Dose (TID), as well as to Single Event Transients (SET) produced by single energetic particles. We designed Bulk Built-In Current Sensors with Dynamic Storage Cell (DynBICS) to detect SET induced by ionizing radiation in NMOS and PMOS transistors. In this work the impact of TID on a complementary pair of DynBICS circuits is studied. The DynBICS were manufactured in IBM 130 nm technology and proved to be resistant to TID effects up to the limit of 600 krad (Si). The total dose reached in the test campaign was 616 krad (Si) from a
60
Co gamma source. The ability of the DynBICS to detect SET remained fairly stable, and the impact of the accumulated dose on the performance of the circuit is discussed in detail.</description><subject>CAE) and Design</subject><subject>Circuits</subject><subject>Circuits and Systems</subject><subject>Computer-Aided Engineering (CAD</subject><subject>Dynamics</subject><subject>Electrical Engineering</subject><subject>Energetic particles</subject><subject>Engineering</subject><subject>Integrated circuits</subject><subject>Ionizing radiation</subject><subject>Metal oxide semiconductors</subject><subject>Radiation</subject><subject>Semiconductor devices</subject><subject>Sensors</subject><subject>Silicon</subject><subject>Storage</subject><issn>0923-8174</issn><issn>1573-0727</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp1kE9LwzAchoMoOKcfwFvAi5do_jRNe9TNP4WBh03wFpKazM42mUmLzE9vRj2I4OX3uzzPy8sLwDnBVwRjcR0JLliOMOGIcyYQOQATwgVDWFBxCCa4pAwVRGTH4CTGDU4O5fkEvFTdVtU99BaufK9aWHnXfDVuDec-GugdvB3a93SatkeVg7MhBON6uDQu-hDhZ9O_wfnOqa6p4bL3Qa0NnJm2PQVHVrXRnP38KXi-v1vNHtHi6aGa3SxQnZGyR6y0peaKaWwt1XWGlRG6tjQjzGQ6s6qg1lqWa2ZIYblWtGQ0N6-6yGthhGVTcDnmboP_GEzsZdfEOhVQzvghSiJyikVZMJzQiz_oxg_BpXaJIgWhPJGJIiNVBx9jMFZuQ9OpsJMEy_3Wctxapq3lfmtJkkNHJybWrU34lfyv9A2hfIEP</recordid><startdate>20150801</startdate><enddate>20150801</enddate><creator>Simionovski, Alexandre</creator><creator>Vaz, Rafael G.</creator><creator>Gonçalez, Odair L.</creator><creator>Wirth, Gilson</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7XB</scope><scope>88I</scope><scope>88K</scope><scope>8AO</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>GNUQQ</scope><scope>H8D</scope><scope>H8G</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L6V</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M2P</scope><scope>M2T</scope><scope>M7S</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0W</scope></search><sort><creationdate>20150801</creationdate><title>Impact of Total Ionizing Dose on Bulk Built-In Current Sensors with Dynamic Storage Cell</title><author>Simionovski, Alexandre ; Vaz, Rafael G. ; Gonçalez, Odair L. ; Wirth, Gilson</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c419t-39f9b5a3b0ff2bc40ae7bcf2413e4b4fa82fff36b3e18f5ba29326edb86c7e7f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>CAE) and Design</topic><topic>Circuits</topic><topic>Circuits and Systems</topic><topic>Computer-Aided Engineering (CAD</topic><topic>Dynamics</topic><topic>Electrical Engineering</topic><topic>Energetic particles</topic><topic>Engineering</topic><topic>Integrated circuits</topic><topic>Ionizing radiation</topic><topic>Metal oxide semiconductors</topic><topic>Radiation</topic><topic>Semiconductor devices</topic><topic>Sensors</topic><topic>Silicon</topic><topic>Storage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Simionovski, Alexandre</creatorcontrib><creatorcontrib>Vaz, Rafael G.</creatorcontrib><creatorcontrib>Gonçalez, Odair L.</creatorcontrib><creatorcontrib>Wirth, Gilson</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>Telecommunications (Alumni Edition)</collection><collection>ProQuest Pharma Collection</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>ProQuest Central Student</collection><collection>Aerospace Database</collection><collection>Copper Technical Reference Library</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>ProQuest Engineering Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Science Database</collection><collection>Telecommunications Database</collection><collection>Engineering Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of electronic testing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Simionovski, Alexandre</au><au>Vaz, Rafael G.</au><au>Gonçalez, Odair L.</au><au>Wirth, Gilson</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of Total Ionizing Dose on Bulk Built-In Current Sensors with Dynamic Storage Cell</atitle><jtitle>Journal of electronic testing</jtitle><stitle>J Electron Test</stitle><date>2015-08-01</date><risdate>2015</risdate><volume>31</volume><issue>4</issue><spage>411</spage><epage>417</epage><pages>411-417</pages><issn>0923-8174</issn><eissn>1573-0727</eissn><abstract>Integrated circuits operating in space and harsh radiation environments are subject to the progressive accumulation of Total Ionizing Dose (TID), as well as to Single Event Transients (SET) produced by single energetic particles. We designed Bulk Built-In Current Sensors with Dynamic Storage Cell (DynBICS) to detect SET induced by ionizing radiation in NMOS and PMOS transistors. In this work the impact of TID on a complementary pair of DynBICS circuits is studied. The DynBICS were manufactured in IBM 130 nm technology and proved to be resistant to TID effects up to the limit of 600 krad (Si). The total dose reached in the test campaign was 616 krad (Si) from a
60
Co gamma source. The ability of the DynBICS to detect SET remained fairly stable, and the impact of the accumulated dose on the performance of the circuit is discussed in detail.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10836-015-5537-1</doi><tpages>7</tpages></addata></record> |
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| subjects | CAE) and Design Circuits Circuits and Systems Computer-Aided Engineering (CAD Dynamics Electrical Engineering Energetic particles Engineering Integrated circuits Ionizing radiation Metal oxide semiconductors Radiation Semiconductor devices Sensors Silicon Storage |
| title | Impact of Total Ionizing Dose on Bulk Built-In Current Sensors with Dynamic Storage Cell |
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