GaN hexagonal pyramids formed by a photo-assisted chemical etching method

A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a con-venient photo-assisted chemical （PAC） etching method. The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN...

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Veröffentlicht in:	Chinese physics B 2014-05, Vol.23 (5), p.588-593
1. Verfasser:	张士英修向前华雪梅谢自力刘斌陈鹏韩平陆海张荣郑有炓
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Sprache:	eng
Schlagworte:	Density Etching Evolution Gallium nitrides GaN Optical properties Optimization Pyramids Spectra 光致发光光谱光辅助化学刻蚀棱锥氮化镓溶液浓度蚀刻条件
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container_title	Chinese physics B
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creator	张士英修向前华雪梅谢自力刘斌陈鹏韩平陆海张荣郑有炓
description	A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a con-venient photo-assisted chemical （PAC） etching method. The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN hexagonal pyramids have been identified. GaN with hexagonal pyramids have higher crystal quality and tensile strain relaxation compared with as-grown GaN. A detailed anal- ysis about evolution of the size, density and optical property of GaN hexagonal pyramids is described as a function of light intensity. The intensity of photoluminescence spectra of GaN etched with hexagonal pyramids significantly increases compared to that of as-grown GaN due to multiple scattering events, high quality GaN with pyramids and the Bragg effect.
doi_str_mv	10.1088/1674-1056/23/5/058101
format	Article
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The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN hexagonal pyramids have been identified. GaN with hexagonal pyramids have higher crystal quality and tensile strain relaxation compared with as-grown GaN. A detailed anal- ysis about evolution of the size, density and optical property of GaN hexagonal pyramids is described as a function of light intensity. 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The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN hexagonal pyramids have been identified. GaN with hexagonal pyramids have higher crystal quality and tensile strain relaxation compared with as-grown GaN. A detailed anal- ysis about evolution of the size, density and optical property of GaN hexagonal pyramids is described as a function of light intensity. 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subjects	Density Etching Evolution Gallium nitrides GaN Optical properties Optimization Pyramids Spectra 光致发光光谱光辅助化学刻蚀棱锥氮化镓溶液浓度蚀刻条件
title	GaN hexagonal pyramids formed by a photo-assisted chemical etching method
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