Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol (PVA) layer and interface trap (Dit) effects, A1/p- Si Schottky barrier diodes (SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurem...

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Veröffentlicht in:Chinese physics B 2014-04, Vol.23 (4), p.545-550
Hauptverfasser: Yücedağ, Ibrahim, Kaya, Ahmet, Altındal, Şemsettin, Uslu, Ibrahim
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Sprache:eng
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