Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results we...

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Veröffentlicht in:	Chinese physics B 2014-03, Vol.23 (3), p.038403-1-038403-5
Hauptverfasser:	Li, Ming, Wang, Yong, Wong, Kai-Ming, Lau, Kei-May
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Buffer layers Gallium nitrides Gates High electron mobility transistors Magnesium Semiconductor devices Silicon substrates
Online-Zugang:	Volltext
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