Optimizing Performance of Silicon-Based p–n Junction Photodetectors by the Piezo-Phototronic Effect

Silicon-based p–n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, p...

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Veröffentlicht in:	ACS nano 2014-12, Vol.8 (12), p.12866-12873
Hauptverfasser:	Wang, Zhaona, Yu, Ruomeng, Wen, Xiaonan, Liu, Ying, Pan, Caofeng, Wu, Wenzhuo, Wang, Zhong Lin
Format:	Artikel
Sprache:	eng
Schlagworte:	Optoelectronic devices Optoelectronics P-n junctions Photodetectors Piezoelectricity Semiconductors Silicon Zinc oxide
Online-Zugang:	Volltext
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