Selective Synthesis of Compound Semiconductor/Oxide Composite Nanowires

Semiconductor/oxide composite nanowires (NWs) were synthesized by molecular beam epitaxial growth and subsequent wet oxidation. Nonselective and selective oxidation conditions applied to the GaAs/AlGaAs core–shell NWs grown on silicon substrates produced GaOx/AlGaOx and GaAs/AlGaOx NWs, respectively...

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Veröffentlicht in:	Nano letters 2014-12, Vol.14 (12), p.7024-7030
Hauptverfasser:	Hibi, Hideaki, Yamaguchi, Masahito, Yamamoto, Naoki, Ishikawa, Fumitaro
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium arsenides Cross-disciplinary physics: materials science rheology Exact sciences and technology Gallium arsenide Gallium arsenides Materials science Methods of nanofabrication Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanostructure Nanowires Oxides Physics Quantum wires Semiconductors Silicon substrates
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