Selective Synthesis of Compound Semiconductor/Oxide Composite Nanowires
Semiconductor/oxide composite nanowires (NWs) were synthesized by molecular beam epitaxial growth and subsequent wet oxidation. Nonselective and selective oxidation conditions applied to the GaAs/AlGaAs core–shell NWs grown on silicon substrates produced GaOx/AlGaOx and GaAs/AlGaOx NWs, respectively...
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| Veröffentlicht in: | Nano letters 2014-12, Vol.14 (12), p.7024-7030 |
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| container_issue | 12 |
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| container_title | Nano letters |
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| creator | Hibi, Hideaki Yamaguchi, Masahito Yamamoto, Naoki Ishikawa, Fumitaro |
| description | Semiconductor/oxide composite nanowires (NWs) were synthesized by molecular beam epitaxial growth and subsequent wet oxidation. Nonselective and selective oxidation conditions applied to the GaAs/AlGaAs core–shell NWs grown on silicon substrates produced GaOx/AlGaOx and GaAs/AlGaOx NWs, respectively. The oxidized amorphous AlGaOx shell produced cathodoluminescence over a wide spectral range encompassing ultraviolet and visible wavelengths, possibly sourced from molecular species related to oxygen. The wire core was buried in the oxides when the diameter of the oxide shell increased, forming a planar structure. These composites are expected to pave the way to future electrical and optical functions for NWs. |
| doi_str_mv | 10.1021/nl503385g |
| format | Article |
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Nonselective and selective oxidation conditions applied to the GaAs/AlGaAs core–shell NWs grown on silicon substrates produced GaOx/AlGaOx and GaAs/AlGaOx NWs, respectively. The oxidized amorphous AlGaOx shell produced cathodoluminescence over a wide spectral range encompassing ultraviolet and visible wavelengths, possibly sourced from molecular species related to oxygen. The wire core was buried in the oxides when the diameter of the oxide shell increased, forming a planar structure. 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Nonselective and selective oxidation conditions applied to the GaAs/AlGaAs core–shell NWs grown on silicon substrates produced GaOx/AlGaOx and GaAs/AlGaOx NWs, respectively. The oxidized amorphous AlGaOx shell produced cathodoluminescence over a wide spectral range encompassing ultraviolet and visible wavelengths, possibly sourced from molecular species related to oxygen. The wire core was buried in the oxides when the diameter of the oxide shell increased, forming a planar structure. These composites are expected to pave the way to future electrical and optical functions for NWs.</description><subject>Aluminum gallium arsenides</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Materials science</subject><subject>Methods of nanofabrication</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanostructure</subject><subject>Nanowires</subject><subject>Oxides</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Semiconductors</subject><subject>Silicon substrates</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqF0MtKAzEUgOEgiq3VhS8gsxF0UZt7JkspWoViF9X1kOaiKTOTmsyofXtHWtuN4CoH8nEO_ACcI3iDIEajumSQkJy9HoA-YgQOuZT4cDfntAdOUlpCCCVh8Bj0MCNUCIz6YDK3pdWN_7DZfF03bzb5lAWXjUO1Cm1tsrmtvA61aXUT4mj25Y3dfCbf2OxJ1eHTR5tOwZFTZbJn23cAXu7vnscPw-ls8ji-nQ4VpbQZOie5s5AoLYjhIkeEOesoh4LxnDOMBdMQG4UZQ4hqQnMtHWGCS6MNXUAyAFebvasY3lubmqLySduyVLUNbSqQ4BhyShH6n_IuBuRIyo5eb6iOIaVoXbGKvlJxXSBY_CQudok7e7Fd2y4qa3byt2kHLrdAJa1KF1Wtfdo7CTnmROyd0qlYhjbWXbg_Dn4DaJSN8g</recordid><startdate>20141210</startdate><enddate>20141210</enddate><creator>Hibi, Hideaki</creator><creator>Yamaguchi, Masahito</creator><creator>Yamamoto, Naoki</creator><creator>Ishikawa, Fumitaro</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7QF</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20141210</creationdate><title>Selective Synthesis of Compound Semiconductor/Oxide Composite Nanowires</title><author>Hibi, Hideaki ; Yamaguchi, Masahito ; Yamamoto, Naoki ; Ishikawa, Fumitaro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a444t-ff96fe03ac73d678135fef4607568652275c02da255114c348c9f35769dcd4b03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Aluminum gallium arsenides</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Materials science</topic><topic>Methods of nanofabrication</topic><topic>Nanocrystalline materials</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanostructure</topic><topic>Nanowires</topic><topic>Oxides</topic><topic>Physics</topic><topic>Quantum wires</topic><topic>Semiconductors</topic><topic>Silicon substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hibi, Hideaki</creatorcontrib><creatorcontrib>Yamaguchi, Masahito</creatorcontrib><creatorcontrib>Yamamoto, Naoki</creatorcontrib><creatorcontrib>Ishikawa, Fumitaro</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hibi, Hideaki</au><au>Yamaguchi, Masahito</au><au>Yamamoto, Naoki</au><au>Ishikawa, Fumitaro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Selective Synthesis of Compound Semiconductor/Oxide Composite Nanowires</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2014-12-10</date><risdate>2014</risdate><volume>14</volume><issue>12</issue><spage>7024</spage><epage>7030</epage><pages>7024-7030</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>Semiconductor/oxide composite nanowires (NWs) were synthesized by molecular beam epitaxial growth and subsequent wet oxidation. 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| subjects | Aluminum gallium arsenides Cross-disciplinary physics: materials science rheology Exact sciences and technology Gallium arsenide Gallium arsenides Materials science Methods of nanofabrication Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanostructure Nanowires Oxides Physics Quantum wires Semiconductors Silicon substrates |
| title | Selective Synthesis of Compound Semiconductor/Oxide Composite Nanowires |
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