Focused-Laser-Enabled p–n Junctions in Graphene Field-Effect Transistors
With its electrical carrier type as well as carrier densities highly sensitive to light, graphene is potentially an ideal candidate for many optoelectronic applications. Beyond the direct light–graphene interactions, indirect effects arising from induced charge traps underneath the photoactive graph...
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Veröffentlicht in: | ACS nano 2013-07, Vol.7 (7), p.5850-5857 |
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Sprache: | eng |
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