Focused-Laser-Enabled p–n Junctions in Graphene Field-Effect Transistors

With its electrical carrier type as well as carrier densities highly sensitive to light, graphene is potentially an ideal candidate for many optoelectronic applications. Beyond the direct light–graphene interactions, indirect effects arising from induced charge traps underneath the photoactive graph...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS nano 2013-07, Vol.7 (7), p.5850-5857
Hauptverfasser: Kim, Young Duck, Bae, Myung-Ho, Seo, Jung-Tak, Kim, Yong Seung, Kim, Hakseong, Lee, Jae Hong, Ahn, Joung Real, Lee, Sang Wook, Chun, Seung-Hyun, Park, Yun Daniel
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!