Optoelectronic Memory Using Two-Dimensional Materials

An atomically thin optoelectronic memory array for image sensing is demonstrated with layered CuIn7Se11 and extended to InSe and MoS2 atomic layers. Photogenerated charge carriers are trapped and subsequently retrieved from the potential well formed by gating a 2D material with Schottky barriers. Th...

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Veröffentlicht in:	Nano letters 2015-01, Vol.15 (1), p.259-265
Hauptverfasser:	Lei, Sidong, Wen, Fangfang, Li, Bo, Wang, Qizhong, Huang, Yihan, Gong, Yongji, He, Yongmin, Dong, Pei, Bellah, James, George, Antony, Ge, Liehui, Lou, Jun, Halas, Naomi J, Vajtai, Robert, Ajayan, Pulickel M
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays COPPER COMPOUNDS Data processing ELECTRONIC PRODUCTS Gating and risering Molybdenum disulfide Optoelectronics RISERING Sensors Ternary systems Two dimensional
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