Solution Epitaxial Growth of Cobalt Nanowires on Crystalline Substrates for Data Storage Densities beyond 1 Tbit/in super(2)
The implementation of nano-objects in numerous emerging applications often demands their integration in macroscopic devices. Here we present the bottom-up epitaxial solution growth of high-density arrays of vertical 5 nm diameter single-crystalline metallic cobalt nanowires on wafer-scale crystallin...
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Veröffentlicht in: | Nano letters 2014-06, Vol.14 (6), p.3481-3486-3481-3486 |
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creator | Liakakos, Nikolaos Blon, Thomas Achkar, Charbel Vilar, Virginie Cormary, Benoit Tan, Reasmey P Benamara, Omar Chaboussant, Gregory Ott, Frederic Warot-Fonrose, Benedicte Snoeck, Etienne Chaudret, Bruno Soulantica, Katerina Respaud, Marc |
description | The implementation of nano-objects in numerous emerging applications often demands their integration in macroscopic devices. Here we present the bottom-up epitaxial solution growth of high-density arrays of vertical 5 nm diameter single-crystalline metallic cobalt nanowires on wafer-scale crystalline metal surfaces. The nanowires form regular hexagonal arrays on unpatterned metallic films. These hybrid heterostructures present an important perpendicular magnetic anisotropy and pave the way to a high density magnetic recording device, with capacities above 10 Terabits/in super(2). This method bypasses the need of assembling and orientating free colloidal nanocrystals on surfaces. Its generalization to other materials opens new perspectives toward many applications. Keywords: Anisotropic nanoparticles; self-organization; cobalt nanowires; nanomagnet array; bit patterned media; epitaxial growth |
doi_str_mv | 10.1021/nl501018z |
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Here we present the bottom-up epitaxial solution growth of high-density arrays of vertical 5 nm diameter single-crystalline metallic cobalt nanowires on wafer-scale crystalline metal surfaces. The nanowires form regular hexagonal arrays on unpatterned metallic films. These hybrid heterostructures present an important perpendicular magnetic anisotropy and pave the way to a high density magnetic recording device, with capacities above 10 Terabits/in super(2). This method bypasses the need of assembling and orientating free colloidal nanocrystals on surfaces. Its generalization to other materials opens new perspectives toward many applications. 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Here we present the bottom-up epitaxial solution growth of high-density arrays of vertical 5 nm diameter single-crystalline metallic cobalt nanowires on wafer-scale crystalline metal surfaces. The nanowires form regular hexagonal arrays on unpatterned metallic films. These hybrid heterostructures present an important perpendicular magnetic anisotropy and pave the way to a high density magnetic recording device, with capacities above 10 Terabits/in super(2). This method bypasses the need of assembling and orientating free colloidal nanocrystals on surfaces. Its generalization to other materials opens new perspectives toward many applications. 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Here we present the bottom-up epitaxial solution growth of high-density arrays of vertical 5 nm diameter single-crystalline metallic cobalt nanowires on wafer-scale crystalline metal surfaces. The nanowires form regular hexagonal arrays on unpatterned metallic films. These hybrid heterostructures present an important perpendicular magnetic anisotropy and pave the way to a high density magnetic recording device, with capacities above 10 Terabits/in super(2). This method bypasses the need of assembling and orientating free colloidal nanocrystals on surfaces. Its generalization to other materials opens new perspectives toward many applications. Keywords: Anisotropic nanoparticles; self-organization; cobalt nanowires; nanomagnet array; bit patterned media; epitaxial growth</abstract><doi>10.1021/nl501018z</doi></addata></record> |
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source | ACS Publications |
subjects | Arrays Cobalt Crystal structure Devices Epitaxial growth High density Nanostructure Nanowires |
title | Solution Epitaxial Growth of Cobalt Nanowires on Crystalline Substrates for Data Storage Densities beyond 1 Tbit/in super(2) |
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