Diameter-Dependent Surface Photovoltage and Surface State Density in Single Semiconductor Nanowires
Based on single-nanowire surface photovoltage measurements and finite-element electrostatic simulations, we determine the surface state density, N s, in individual n-type ZnO nanowires as a function of nanowire diameter. In general, N s increases as the diameter decreases. This identifies an importa...
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| Veröffentlicht in: | Nano letters 2012-10, Vol.12 (10), p.5111-5116 |
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| creator | Soudi, Afsoon Hsu, Cheng-Han Gu, Yi |
| description | Based on single-nanowire surface photovoltage measurements and finite-element electrostatic simulations, we determine the surface state density, N s, in individual n-type ZnO nanowires as a function of nanowire diameter. In general, N s increases as the diameter decreases. This identifies an important origin of the recently reported diameter dependence of the surface recombination velocity, which has been commonly considered to be independent of the diameter. Furthermore, through the determination of the surface carrier lifetime, we suggest that the diameter dependence of the surface state density accounts for the rather abrupt transition from bulk-limited to surface-limited carrier transport over a narrow nanowire diameter regime (∼30–40 nm). These findings are supported by the comparison between bulk-limited and surface-dependent minority carrier diffusion lengths measured at various diameters. |
| doi_str_mv | 10.1021/nl301863e |
| format | Article |
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In general, N s increases as the diameter decreases. This identifies an important origin of the recently reported diameter dependence of the surface recombination velocity, which has been commonly considered to be independent of the diameter. Furthermore, through the determination of the surface carrier lifetime, we suggest that the diameter dependence of the surface state density accounts for the rather abrupt transition from bulk-limited to surface-limited carrier transport over a narrow nanowire diameter regime (∼30–40 nm). These findings are supported by the comparison between bulk-limited and surface-dependent minority carrier diffusion lengths measured at various diameters.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl301863e</identifier><identifier>PMID: 22985208</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Carrier transport ; Cross-disciplinary physics: materials science; rheology ; Density ; Diffusion length ; Exact sciences and technology ; Materials science ; Mathematical analysis ; Minority carriers ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Nanowires ; Photovoltages ; Physics ; Quantum wires ; Semiconductors ; Simulation</subject><ispartof>Nano letters, 2012-10, Vol.12 (10), p.5111-5116</ispartof><rights>Copyright © 2012 American Chemical Society</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a378t-60982910f1537e14d5d6cb2bd324801c5168efd4d9a8a2ab6f231180e19a41123</citedby><cites>FETCH-LOGICAL-a378t-60982910f1537e14d5d6cb2bd324801c5168efd4d9a8a2ab6f231180e19a41123</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl301863e$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl301863e$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26450822$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/22985208$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Soudi, Afsoon</creatorcontrib><creatorcontrib>Hsu, Cheng-Han</creatorcontrib><creatorcontrib>Gu, Yi</creatorcontrib><title>Diameter-Dependent Surface Photovoltage and Surface State Density in Single Semiconductor Nanowires</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>Based on single-nanowire surface photovoltage measurements and finite-element electrostatic simulations, we determine the surface state density, N s, in individual n-type ZnO nanowires as a function of nanowire diameter. In general, N s increases as the diameter decreases. This identifies an important origin of the recently reported diameter dependence of the surface recombination velocity, which has been commonly considered to be independent of the diameter. Furthermore, through the determination of the surface carrier lifetime, we suggest that the diameter dependence of the surface state density accounts for the rather abrupt transition from bulk-limited to surface-limited carrier transport over a narrow nanowire diameter regime (∼30–40 nm). These findings are supported by the comparison between bulk-limited and surface-dependent minority carrier diffusion lengths measured at various diameters.</description><subject>Carrier transport</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Density</subject><subject>Diffusion length</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Mathematical analysis</subject><subject>Minority carriers</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanowires</subject><subject>Photovoltages</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Semiconductors</subject><subject>Simulation</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqN0E1P3DAQBmALFZWP9sAfqHKpVA6BsZN47WPF8iUhqLRwjmbtCTVK7K3tFPHvCWJZLhw4eeR5NDN6GTvgcMRB8GPfV8CVrGiL7fKmglJqLb5salXvsL2UHgBAVw18ZTtCaNUIULvMzB0OlCmWc1qRt-RzsRhjh4aKP39DDv9Dn_GeCvR201hkzFTMySeXnwrni4Xz9_30T4MzwdvR5BCLa_Th0UVK39h2h32i7-t3n92dnd6eXJRXN-eXJ7-vSqxmKpcStBKaQzedPSNe28ZKsxRLW4laATcNl4o6W1uNCgUuZScqzhUQ11hzLqp99ut17iqGfyOl3A4uGep79BTG1PKZFNAIqT5BQTeKCwlqooev1MSQUqSuXUU3YHyaUPsSf7uJf7I_1mPH5UB2I9_ynsDPNcBksO8ieuPSu5N1A0qId4cmtQ9hjH4K7oOFz5nhl80</recordid><startdate>20121010</startdate><enddate>20121010</enddate><creator>Soudi, Afsoon</creator><creator>Hsu, Cheng-Han</creator><creator>Gu, Yi</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20121010</creationdate><title>Diameter-Dependent Surface Photovoltage and Surface State Density in Single Semiconductor Nanowires</title><author>Soudi, Afsoon ; Hsu, Cheng-Han ; Gu, Yi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a378t-60982910f1537e14d5d6cb2bd324801c5168efd4d9a8a2ab6f231180e19a41123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Carrier transport</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Density</topic><topic>Diffusion length</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Mathematical analysis</topic><topic>Minority carriers</topic><topic>Nanocrystalline materials</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanowires</topic><topic>Photovoltages</topic><topic>Physics</topic><topic>Quantum wires</topic><topic>Semiconductors</topic><topic>Simulation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Soudi, Afsoon</creatorcontrib><creatorcontrib>Hsu, Cheng-Han</creatorcontrib><creatorcontrib>Gu, Yi</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Soudi, Afsoon</au><au>Hsu, Cheng-Han</au><au>Gu, Yi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Diameter-Dependent Surface Photovoltage and Surface State Density in Single Semiconductor Nanowires</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2012-10-10</date><risdate>2012</risdate><volume>12</volume><issue>10</issue><spage>5111</spage><epage>5116</epage><pages>5111-5116</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>Based on single-nanowire surface photovoltage measurements and finite-element electrostatic simulations, we determine the surface state density, N s, in individual n-type ZnO nanowires as a function of nanowire diameter. 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| ispartof | Nano letters, 2012-10, Vol.12 (10), p.5111-5116 |
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| source | American Chemical Society Journals |
| subjects | Carrier transport Cross-disciplinary physics: materials science rheology Density Diffusion length Exact sciences and technology Materials science Mathematical analysis Minority carriers Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanowires Photovoltages Physics Quantum wires Semiconductors Simulation |
| title | Diameter-Dependent Surface Photovoltage and Surface State Density in Single Semiconductor Nanowires |
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