Individual GaN Nanowires Exhibit Strong Piezoelectricity in 3D

Semiconductor GaN NWs are promising components in next generation nano- and optoelectronic systems. In addition to their direct band gap, they exhibit piezoelectricity, which renders them particularly attractive in energy harvesting applications for self-powered devices. Nanowires are often consider...

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Veröffentlicht in:	Nano letters 2012-02, Vol.12 (2), p.970-976
Hauptverfasser:	Minary-Jolandan, Majid, Bernal, Rodrigo A, Kuljanishvili, Irma, Parpoil, Victor, Espinosa, Horacio D
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectrics, piezoelectrics, and ferroelectrics and their properties Electricity Energy harvesting Exact sciences and technology Gallium - chemistry Gallium nitrides Mathematical analysis Mathematical models Microscopy, Atomic Force Nanostructure Nanowires Nanowires - chemistry Particle Size Physics Piezoelectricity Piezoelectricity and electromechanical effects Semiconductors Three dimensional
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