Gallium Nitride Nanowire Based Nanogenerators and Light-Emitting Diodes
Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m2. Luminous LED modules based on n-GaN nanowire...
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| Veröffentlicht in: | ACS nano 2012-06, Vol.6 (6), p.5687-5692 |
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| container_title | ACS nano |
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| creator | Chen, Chih-Yen Zhu, Guang Hu, Youfan Yu, Jeng-Wei Song, Jinghui Cheng, Kai-Yuan Peng, Lung-Han Chou, Li-Jen Wang, Zhong Lin |
| description | Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m2. Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding electroluminescence spectra are recorded at a forward bias. Moreover, the GaN nanowire LED can be lighted up by the power provided by a ZnO nanowire based nanogenerator, demonstrating a self-powered LED using wurtzite-structured nanomaterials. |
| doi_str_mv | 10.1021/nn301814w |
| format | Article |
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Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m2. Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding electroluminescence spectra are recorded at a forward bias. Moreover, the GaN nanowire LED can be lighted up by the power provided by a ZnO nanowire based nanogenerator, demonstrating a self-powered LED using wurtzite-structured nanomaterials.</description><identifier>ISSN: 1936-0851</identifier><identifier>EISSN: 1936-086X</identifier><identifier>DOI: 10.1021/nn301814w</identifier><identifier>PMID: 22607154</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><subject>Density ; Electric power generation ; Electroluminescence ; Equipment Design ; Equipment Failure Analysis ; Gallium - chemistry ; Gallium nitrides ; Light-emitting diodes ; Lighting - instrumentation ; Materials Testing ; Nanomaterials ; Nanoparticles - chemistry ; Nanoparticles - ultrastructure ; Nanotechnology ; Nanotechnology - instrumentation ; Nanowires ; Nitrides ; Particle Size ; Semiconductors</subject><ispartof>ACS nano, 2012-06, Vol.6 (6), p.5687-5692</ispartof><rights>Copyright © 2012 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a414t-46118f10bef5d8d3efe2819d7f9e9754fda4fe3e5c84efc0e707fe2d2f70e86b3</citedby><cites>FETCH-LOGICAL-a414t-46118f10bef5d8d3efe2819d7f9e9754fda4fe3e5c84efc0e707fe2d2f70e86b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nn301814w$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nn301814w$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,2752,27055,27903,27904,56716,56766</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/22607154$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Chen, Chih-Yen</creatorcontrib><creatorcontrib>Zhu, Guang</creatorcontrib><creatorcontrib>Hu, Youfan</creatorcontrib><creatorcontrib>Yu, Jeng-Wei</creatorcontrib><creatorcontrib>Song, Jinghui</creatorcontrib><creatorcontrib>Cheng, Kai-Yuan</creatorcontrib><creatorcontrib>Peng, Lung-Han</creatorcontrib><creatorcontrib>Chou, Li-Jen</creatorcontrib><creatorcontrib>Wang, Zhong Lin</creatorcontrib><title>Gallium Nitride Nanowire Based Nanogenerators and Light-Emitting Diodes</title><title>ACS nano</title><addtitle>ACS Nano</addtitle><description>Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m2. Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding electroluminescence spectra are recorded at a forward bias. Moreover, the GaN nanowire LED can be lighted up by the power provided by a ZnO nanowire based nanogenerator, demonstrating a self-powered LED using wurtzite-structured nanomaterials.</description><subject>Density</subject><subject>Electric power generation</subject><subject>Electroluminescence</subject><subject>Equipment Design</subject><subject>Equipment Failure Analysis</subject><subject>Gallium - chemistry</subject><subject>Gallium nitrides</subject><subject>Light-emitting diodes</subject><subject>Lighting - instrumentation</subject><subject>Materials Testing</subject><subject>Nanomaterials</subject><subject>Nanoparticles - chemistry</subject><subject>Nanoparticles - ultrastructure</subject><subject>Nanotechnology</subject><subject>Nanotechnology - instrumentation</subject><subject>Nanowires</subject><subject>Nitrides</subject><subject>Particle Size</subject><subject>Semiconductors</subject><issn>1936-0851</issn><issn>1936-086X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNqF0E1LwzAYB_AgitPpwS8gvQh6qOa1SY865xTGvCh4K1nzZGa06Uxaht_e6uZOgpfnBX78D3-Ezgi-JpiSG-8ZJorw9R46IjnLUqyyt_3dLcgAHce4xFhIJbNDNKA0w5IIfoQmE11VrquTmWuDM5DMtG_WLkBypyOYn3cBHoJumxAT7U0ydYv3Nh3Xrm2dXyT3rjEQT9CB1VWE0-0eoteH8cvoMZ0-T55Gt9NUc8LblGeEKEvwHKwwyjCwQBXJjbQ55FJwazS3wECUioMtMUgse2KolRhUNmdDdLnJXYXmo4PYFrWLJVSV9tB0sSAyo1jgnLH_KaaUSSn6OURXG1qGJsYAtlgFV-vw2aNvR4pdxb0938Z28xrMTv522oOLDdBlLJZNF3xfyB9BX8c9glg</recordid><startdate>20120626</startdate><enddate>20120626</enddate><creator>Chen, Chih-Yen</creator><creator>Zhu, Guang</creator><creator>Hu, Youfan</creator><creator>Yu, Jeng-Wei</creator><creator>Song, Jinghui</creator><creator>Cheng, Kai-Yuan</creator><creator>Peng, Lung-Han</creator><creator>Chou, Li-Jen</creator><creator>Wang, Zhong Lin</creator><general>American Chemical Society</general><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120626</creationdate><title>Gallium Nitride Nanowire Based Nanogenerators and Light-Emitting Diodes</title><author>Chen, Chih-Yen ; 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| subjects | Density Electric power generation Electroluminescence Equipment Design Equipment Failure Analysis Gallium - chemistry Gallium nitrides Light-emitting diodes Lighting - instrumentation Materials Testing Nanomaterials Nanoparticles - chemistry Nanoparticles - ultrastructure Nanotechnology Nanotechnology - instrumentation Nanowires Nitrides Particle Size Semiconductors |
| title | Gallium Nitride Nanowire Based Nanogenerators and Light-Emitting Diodes |
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