One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires

We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with a diameter around 20 nm is obtained over T = 40–300 K. At low temperatures (T < ∼100 K), oscillations in t...

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Veröffentlicht in:	Nano letters 2012-12, Vol.12 (12), p.6492-6497
Hauptverfasser:	Tian, Yuan, Sakr, Mohammed R, Kinder, Jesse M, Liang, Dong, MacDonald, Michael J, Qiu, Richard L. J, Gao, Hong-Jun, Gao, Xuan P. A
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical potential Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Gates Indium arsenides Materials science Methods of deposition of films and coatings film growth and epitaxy Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanostructure Nanowires Physics Power factor Quantum confinement Quantum wires Semiconductors Thermal properties of condensed matter Thermal properties of small particles, nanocrystals, nanotubes Thermoelectricity
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