Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition
The aim of this work is to red shift quantum dot (QD) photoluminescence (PL) towards telecommunication wavelengths by engineering the metalorganic vapour phase epitaxy (MOVPE) prepared structure of InAs/GaAs QDs covered by a GaAsSb strain-reducing layer. Our results proved that type I or type II ban...
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| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2013-03, Vol.46 (9), p.095103-1-6 |
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| creator | Hospodková, A Zíková, M Pangrác, J Oswald, J Kubištová, J Kuldová, K Hazdra, P Hulicius, E |
| description | The aim of this work is to red shift quantum dot (QD) photoluminescence (PL) towards telecommunication wavelengths by engineering the metalorganic vapour phase epitaxy (MOVPE) prepared structure of InAs/GaAs QDs covered by a GaAsSb strain-reducing layer. Our results proved that type I or type II band alignment can be controlled by both GaAsSb composition and QD size. Maintaining type I heterostructure is important for high luminescence efficiency and emission wavelength stability of the QD structure. The simulation of electron structure in InAs QDs covered with a GaAsSb strain-reducing layer as well as experimental results suggest the importance of increasing QD size for obtaining a longer wavelength PL from the type I heterostructure. The PL maximum wavelength 1371 nm was achieved for the MOVPE prepared type I QD structure with 14% of Sb in GaAsSb. This type of structure exhibits seven times higher PL intensity, twice narrower PL peak and 85 meV redshift in comparison with similarly prepared QDs covered by GaAs. |
| doi_str_mv | 10.1088/0022-3727/46/9/095103 |
| format | Article |
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Our results proved that type I or type II band alignment can be controlled by both GaAsSb composition and QD size. Maintaining type I heterostructure is important for high luminescence efficiency and emission wavelength stability of the QD structure. The simulation of electron structure in InAs QDs covered with a GaAsSb strain-reducing layer as well as experimental results suggest the importance of increasing QD size for obtaining a longer wavelength PL from the type I heterostructure. The PL maximum wavelength 1371 nm was achieved for the MOVPE prepared type I QD structure with 14% of Sb in GaAsSb. This type of structure exhibits seven times higher PL intensity, twice narrower PL peak and 85 meV redshift in comparison with similarly prepared QDs covered by GaAs.</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/0022-3727/46/9/095103</identifier><identifier>CODEN: JPAPBE</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Alignment ; Band alignment ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Covering ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; GaAsSb ; Gallium arsenide ; Gallium arsenides ; Heterostructures ; Iii-v semiconductors ; InAs/GaAs ; Indium arsenides ; MOVPE ; Optical materials ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Optics ; Other nonlinear optical materials; photorefractive and semiconductor materials ; Photoluminescence ; Physics ; Quantum dot ; Quantum dots ; Red shift ; Wavelengths</subject><ispartof>Journal of physics. D, Applied physics, 2013-03, Vol.46 (9), p.095103-1-6</ispartof><rights>2013 IOP Publishing Ltd</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c391t-43fa1efe793436b2674bbac1635955773597ad454cbe857e5b67c766229aea153</citedby><cites>FETCH-LOGICAL-c391t-43fa1efe793436b2674bbac1635955773597ad454cbe857e5b67c766229aea153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0022-3727/46/9/095103/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27142062$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hospodková, A</creatorcontrib><creatorcontrib>Zíková, M</creatorcontrib><creatorcontrib>Pangrác, J</creatorcontrib><creatorcontrib>Oswald, J</creatorcontrib><creatorcontrib>Kubištová, J</creatorcontrib><creatorcontrib>Kuldová, K</creatorcontrib><creatorcontrib>Hazdra, P</creatorcontrib><creatorcontrib>Hulicius, E</creatorcontrib><title>Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition</title><title>Journal of physics. D, Applied physics</title><addtitle>JPhysD</addtitle><addtitle>J. Phys. D: Appl. Phys</addtitle><description>The aim of this work is to red shift quantum dot (QD) photoluminescence (PL) towards telecommunication wavelengths by engineering the metalorganic vapour phase epitaxy (MOVPE) prepared structure of InAs/GaAs QDs covered by a GaAsSb strain-reducing layer. Our results proved that type I or type II band alignment can be controlled by both GaAsSb composition and QD size. Maintaining type I heterostructure is important for high luminescence efficiency and emission wavelength stability of the QD structure. The simulation of electron structure in InAs QDs covered with a GaAsSb strain-reducing layer as well as experimental results suggest the importance of increasing QD size for obtaining a longer wavelength PL from the type I heterostructure. The PL maximum wavelength 1371 nm was achieved for the MOVPE prepared type I QD structure with 14% of Sb in GaAsSb. This type of structure exhibits seven times higher PL intensity, twice narrower PL peak and 85 meV redshift in comparison with similarly prepared QDs covered by GaAs.</description><subject>Alignment</subject><subject>Band alignment</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Covering</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>GaAsSb</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Heterostructures</subject><subject>Iii-v semiconductors</subject><subject>InAs/GaAs</subject><subject>Indium arsenides</subject><subject>MOVPE</subject><subject>Optical materials</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</subject><subject>Optics</subject><subject>Other nonlinear optical materials; photorefractive and semiconductor materials</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Quantum dot</subject><subject>Quantum dots</subject><subject>Red shift</subject><subject>Wavelengths</subject><issn>0022-3727</issn><issn>1361-6463</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkc1O3TAUhCPUStxCHwHJm0rdpPG_k-UVaumVkLoorC3HOQGjxA7-Wdw-Qx-ahIvYspqz-GaONFNVVwT_ILhtG4wprZmiquGy6RrcCYLZWbUjTJJacsk-Vbt35rz6ktITxljIluyq_3fHBdChzq9yQL3xAzKTe_Az-IzCiAy6Mfv0t28Ofp-a7UbPxfhcZjSEjB4hQwwpx2JziYCcH6cC3sKA-uMrkdw_QFvsChnn6whDsc4_oMkcISIb5iUkl13wl9Xn0UwJvr7pRXX_6-fd9e_69s_N4Xp_W1vWkVxzNhoCI6iOcSZ7KhXve2OJZKITQqlVlBm44LaHVigQvVRWSUlpZ8AQwS6q76fcJYbnAinr2SUL02Q8hJI0UYIJwVvafowy3nFBCcYrKk6oXftIEUa9RDebeNQE620ovY2gtxE0l7rTp6FW37e3FyZZM43ReOvSu5kqwimWdOXIiXNh0U-hRL929EH2C9tcoc0</recordid><startdate>20130306</startdate><enddate>20130306</enddate><creator>Hospodková, A</creator><creator>Zíková, M</creator><creator>Pangrác, J</creator><creator>Oswald, J</creator><creator>Kubištová, J</creator><creator>Kuldová, K</creator><creator>Hazdra, P</creator><creator>Hulicius, E</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130306</creationdate><title>Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition</title><author>Hospodková, A ; Zíková, M ; Pangrác, J ; Oswald, J ; Kubištová, J ; Kuldová, K ; Hazdra, P ; Hulicius, E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c391t-43fa1efe793436b2674bbac1635955773597ad454cbe857e5b67c766229aea153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Alignment</topic><topic>Band alignment</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Covering</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>GaAsSb</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Heterostructures</topic><topic>Iii-v semiconductors</topic><topic>InAs/GaAs</topic><topic>Indium arsenides</topic><topic>MOVPE</topic><topic>Optical materials</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</topic><topic>Optics</topic><topic>Other nonlinear optical materials; photorefractive and semiconductor materials</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Quantum dot</topic><topic>Quantum dots</topic><topic>Red shift</topic><topic>Wavelengths</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hospodková, A</creatorcontrib><creatorcontrib>Zíková, M</creatorcontrib><creatorcontrib>Pangrác, J</creatorcontrib><creatorcontrib>Oswald, J</creatorcontrib><creatorcontrib>Kubištová, J</creatorcontrib><creatorcontrib>Kuldová, K</creatorcontrib><creatorcontrib>Hazdra, P</creatorcontrib><creatorcontrib>Hulicius, E</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. 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Phys</addtitle><date>2013-03-06</date><risdate>2013</risdate><volume>46</volume><issue>9</issue><spage>095103</spage><epage>1-6</epage><pages>095103-1-6</pages><issn>0022-3727</issn><eissn>1361-6463</eissn><coden>JPAPBE</coden><abstract>The aim of this work is to red shift quantum dot (QD) photoluminescence (PL) towards telecommunication wavelengths by engineering the metalorganic vapour phase epitaxy (MOVPE) prepared structure of InAs/GaAs QDs covered by a GaAsSb strain-reducing layer. Our results proved that type I or type II band alignment can be controlled by both GaAsSb composition and QD size. Maintaining type I heterostructure is important for high luminescence efficiency and emission wavelength stability of the QD structure. The simulation of electron structure in InAs QDs covered with a GaAsSb strain-reducing layer as well as experimental results suggest the importance of increasing QD size for obtaining a longer wavelength PL from the type I heterostructure. The PL maximum wavelength 1371 nm was achieved for the MOVPE prepared type I QD structure with 14% of Sb in GaAsSb. This type of structure exhibits seven times higher PL intensity, twice narrower PL peak and 85 meV redshift in comparison with similarly prepared QDs covered by GaAs.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0022-3727/46/9/095103</doi><tpages>6</tpages></addata></record> |
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| subjects | Alignment Band alignment Condensed matter: electronic structure, electrical, magnetic, and optical properties Covering Exact sciences and technology Fundamental areas of phenomenology (including applications) GaAsSb Gallium arsenide Gallium arsenides Heterostructures Iii-v semiconductors InAs/GaAs Indium arsenides MOVPE Optical materials Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Optics Other nonlinear optical materials photorefractive and semiconductor materials Photoluminescence Physics Quantum dot Quantum dots Red shift Wavelengths |
| title | Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition |
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