Field plate structural optimization for enhancing the power gain of GaN-based HEMTs
A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate （FP） techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and...
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| Veröffentlicht in: | Chinese physics B 2013-09, Vol.22 (9), p.574-578 |
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| Format: | Artikel |
| Sprache: | eng |
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| Online-Zugang: | Volltext |
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