Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate （FP） techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and...

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Veröffentlicht in:	Chinese physics B 2013-09, Vol.22 (9), p.574-578
1. Verfasser:	张凯曹梦逸雷晓艺赵胜雷杨丽媛郑雪峰马晓华郝跃
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrodes Filled plastics GaN Gates HEMT器件 High electron mobility transistors Noise levels Photolithography Plates (structural members) Power gain Semiconductor devices 击穿性能功率增益场板结构寄生电容结构优化高频性能
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container_end_page	578
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container_title	Chinese physics B
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creator	张凯曹梦逸雷晓艺赵胜雷杨丽媛郑雪峰马晓华郝跃
description	A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate （FP） techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simul- taneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 gm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FE This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications.
doi_str_mv	10.1088/1674-1056/22/9/097303
format	Article
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subjects	Electrodes Filled plastics GaN Gates HEMT器件 High electron mobility transistors Noise levels Photolithography Plates (structural members) Power gain Semiconductor devices 击穿性能功率增益场板结构寄生电容结构优化高频性能
title	Field plate structural optimization for enhancing the power gain of GaN-based HEMTs
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