Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates
We investigate the formations of wurtzite (WZ) SiC nano polytypes in zinc blende (ZB) SiC nanofilms hetero-grown on Si-(100) substrates via low pressure chemical vapor deposition (LPCVD) by adjusting the Si/C ratio of the introduced precursors. Through SEM, TEM, and Raman characterizations, we find...
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| Veröffentlicht in: | Chinese physics B 2013-08, Vol.22 (8), p.86802-1-086802-5 |
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| container_end_page | 1-086802-5 |
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| container_title | Chinese physics B |
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| creator | Liu, Xing-Fang Sun, Guo-Sheng Liu, Bin Yan, Guo-Guo Guan, Min Zhang, Yang Zhang, Feng Dong, Lin Zheng, Liu Liu, Sheng-Bei Tian, Li-Xin Wang, Lei Zhao, Wan-Shun Zeng, Yi-Ping |
| description | We investigate the formations of wurtzite (WZ) SiC nano polytypes in zinc blende (ZB) SiC nanofilms hetero-grown on Si-(100) substrates via low pressure chemical vapor deposition (LPCVD) by adjusting the Si/C ratio of the introduced precursors. Through SEM, TEM, and Raman characterizations, we find that the nanofilms consist of discrete WZ SiC nano polytypes and ZB SiC polytypes composed of WZ polytypes (WZ + ZB) and disordered ZB SiC polytypes, respectively, according to Si/C ratios of 0.5, 1.5, and 3. We attribute the WZ polytype formation to being due to a kinetic mechanism based on the Si/C surface saturation control. |
| doi_str_mv | 10.1088/1674-1056/22/8/086802 |
| format | Article |
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Through SEM, TEM, and Raman characterizations, we find that the nanofilms consist of discrete WZ SiC nano polytypes and ZB SiC polytypes composed of WZ polytypes (WZ + ZB) and disordered ZB SiC polytypes, respectively, according to Si/C ratios of 0.5, 1.5, and 3. 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Through SEM, TEM, and Raman characterizations, we find that the nanofilms consist of discrete WZ SiC nano polytypes and ZB SiC polytypes composed of WZ polytypes (WZ + ZB) and disordered ZB SiC polytypes, respectively, according to Si/C ratios of 0.5, 1.5, and 3. We attribute the WZ polytype formation to being due to a kinetic mechanism based on the Si/C surface saturation control.</description><subject>Blends</subject><subject>Formations</subject><subject>Nanostructure</subject><subject>Polytypes</subject><subject>Saturation</subject><subject>Silicon</subject><subject>Silicon carbide</subject><subject>Silicon substrates</subject><subject>Zinc</subject><issn>1674-1056</issn><issn>1741-4199</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNo1kE1LxDAURYsoOI7-BCHLcVEnr2naZCmDXzDgYnQd0jTRSJvUJGUY_fNOqa7ehXe4F06WXQO-BczYGqq6zAHTal0Ua7bGrGK4OMkWUJeQl8D56TH_M-fZRYyfGFeAC7LIfnZjMFJpFGUag0zWO6S8S8F36BjTh0bGh35-eIP2Y0jfNmk0-O6QDoOOyDr0bZ1CTaddq9HObpCTzhvb9RG9B793U9PO5ivA-AbFsYnpuKTjZXZmZBf11d9dZm8P96-bp3z78vi8udvmqmBVyjVg3tCaNqbipSxqbogBInGpW26YbkhdYdkSaVhJDQcDyrQtJ1xJ1TLZcLLMVnPvEPzXqGMSvY1Kd5102o9RQE0JpVBROKJ0RlXwMQZtxBBsL8NBABaTbDGJFJNIURSCiVk2-QUnQHSw</recordid><startdate>201308</startdate><enddate>201308</enddate><creator>Liu, Xing-Fang</creator><creator>Sun, Guo-Sheng</creator><creator>Liu, Bin</creator><creator>Yan, Guo-Guo</creator><creator>Guan, Min</creator><creator>Zhang, Yang</creator><creator>Zhang, Feng</creator><creator>Dong, Lin</creator><creator>Zheng, Liu</creator><creator>Liu, Sheng-Bei</creator><creator>Tian, Li-Xin</creator><creator>Wang, Lei</creator><creator>Zhao, Wan-Shun</creator><creator>Zeng, Yi-Ping</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>201308</creationdate><title>Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates</title><author>Liu, Xing-Fang ; Sun, Guo-Sheng ; Liu, Bin ; Yan, Guo-Guo ; Guan, Min ; Zhang, Yang ; Zhang, Feng ; Dong, Lin ; Zheng, Liu ; Liu, Sheng-Bei ; Tian, Li-Xin ; Wang, Lei ; Zhao, Wan-Shun ; Zeng, Yi-Ping</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c286t-e109b575bf694a279f3f13a04ed9f8eb3760ad3af845f91f1cfdd939cacd8ab93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Blends</topic><topic>Formations</topic><topic>Nanostructure</topic><topic>Polytypes</topic><topic>Saturation</topic><topic>Silicon</topic><topic>Silicon carbide</topic><topic>Silicon substrates</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Xing-Fang</creatorcontrib><creatorcontrib>Sun, Guo-Sheng</creatorcontrib><creatorcontrib>Liu, Bin</creatorcontrib><creatorcontrib>Yan, Guo-Guo</creatorcontrib><creatorcontrib>Guan, Min</creatorcontrib><creatorcontrib>Zhang, Yang</creatorcontrib><creatorcontrib>Zhang, Feng</creatorcontrib><creatorcontrib>Dong, Lin</creatorcontrib><creatorcontrib>Zheng, Liu</creatorcontrib><creatorcontrib>Liu, Sheng-Bei</creatorcontrib><creatorcontrib>Tian, Li-Xin</creatorcontrib><creatorcontrib>Wang, Lei</creatorcontrib><creatorcontrib>Zhao, Wan-Shun</creatorcontrib><creatorcontrib>Zeng, Yi-Ping</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Xing-Fang</au><au>Sun, Guo-Sheng</au><au>Liu, Bin</au><au>Yan, Guo-Guo</au><au>Guan, Min</au><au>Zhang, Yang</au><au>Zhang, Feng</au><au>Dong, Lin</au><au>Zheng, Liu</au><au>Liu, Sheng-Bei</au><au>Tian, Li-Xin</au><au>Wang, Lei</au><au>Zhao, Wan-Shun</au><au>Zeng, Yi-Ping</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates</atitle><jtitle>Chinese physics B</jtitle><date>2013-08</date><risdate>2013</risdate><volume>22</volume><issue>8</issue><spage>86802</spage><epage>1-086802-5</epage><pages>86802-1-086802-5</pages><issn>1674-1056</issn><eissn>1741-4199</eissn><abstract>We investigate the formations of wurtzite (WZ) SiC nano polytypes in zinc blende (ZB) SiC nanofilms hetero-grown on Si-(100) substrates via low pressure chemical vapor deposition (LPCVD) by adjusting the Si/C ratio of the introduced precursors. Through SEM, TEM, and Raman characterizations, we find that the nanofilms consist of discrete WZ SiC nano polytypes and ZB SiC polytypes composed of WZ polytypes (WZ + ZB) and disordered ZB SiC polytypes, respectively, according to Si/C ratios of 0.5, 1.5, and 3. We attribute the WZ polytype formation to being due to a kinetic mechanism based on the Si/C surface saturation control.</abstract><doi>10.1088/1674-1056/22/8/086802</doi></addata></record> |
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| language | eng |
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| source | IOP Publishing Journals |
| subjects | Blends Formations Nanostructure Polytypes Saturation Silicon Silicon carbide Silicon substrates Zinc |
| title | Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates |
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