Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes
We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes（UV OLEDs） using different heterojunction structures.It is found that an energy barrier of over 0.3 eV between the emissive layer（EML） and adjacent transport layer facilitates exci...
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| Veröffentlicht in: | Chinese physics B 2015-02, Vol.24 (2), p.253-258 |
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| creator | 张琪 张浩 张小文 徐韬 魏斌 |
| description | We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes（UV OLEDs） using different heterojunction structures.It is found that an energy barrier of over 0.3 eV between the emissive layer（EML） and adjacent transport layer facilitates exciplex formation.The electron blocking layer effectively confines electrons in the EML,which contributes to pure UV emission and enhances efficiency.The change in EML thickness generates tunable UV emission from 376 nm to 406 nm.In addition,the UV emission excites low-energy organic function layers and produces photoluminescent emission.In UV OLED,avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency.A maximum external quantum efficiency of 1.2%with a UV emission peak of 376 nm is realized. |
| doi_str_mv | 10.1088/1674-1056/24/2/024222 |
| format | Article |
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photoluminescent emission.In UV OLED,avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency.A maximum external quantum efficiency of 1.2%with a UV emission peak of 376 nm is realized.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>EISSN: 1741-4199</identifier><identifier>DOI: 10.1088/1674-1056/24/2/024222</identifier><language>eng</language><subject>Blocking ; Electroluminescence ; Emission ; EML ; Formations ; Light absorption ; OLED ; Organic light emitting diodes ; Photoluminescence ; Ultraviolet ; 光吸收 ; 外量子效率 ; 有机发光二极管 ; 激基复合物 ; 电致发光 ; 紫外线辐射</subject><ispartof>Chinese physics B, 2015-02, Vol.24 (2), 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found that an energy barrier of over 0.3 eV between the emissive layer（EML） and adjacent transport layer facilitates exciplex formation.The electron blocking layer effectively confines electrons in the EML,which contributes to pure UV emission and enhances efficiency.The change in EML thickness generates tunable UV emission from 376 nm to 406 nm.In addition,the UV emission excites low-energy organic function layers and produces photoluminescent emission.In UV OLED,avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency.A maximum external quantum efficiency of 1.2%with a UV emission peak of 376 nm is realized.</description><subject>Blocking</subject><subject>Electroluminescence</subject><subject>Emission</subject><subject>EML</subject><subject>Formations</subject><subject>Light absorption</subject><subject>OLED</subject><subject>Organic light emitting diodes</subject><subject>Photoluminescence</subject><subject>Ultraviolet</subject><subject>光吸收</subject><subject>外量子效率</subject><subject>有机发光二极管</subject><subject>激基复合物</subject><subject>电致发光</subject><subject>紫外线辐射</subject><issn>1674-1056</issn><issn>2058-3834</issn><issn>1741-4199</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEQhoMoWKs_QVg8eVmb790epdQPKHjRc8hmZ9tINmmTrNR_79aWnoYZnneYeRC6J_iJ4LqeEVnxkmAhZ5TP6AxTTim9QBOKRV2ymvFLNDkz1-gmpW-MJcGUTZBe7o3dOtgXXYi9zjb4Qvu2AAcmx-CG3npIBnwudJNC3P4T1heDy1H_2OAgFyGutbemcHa9ySX0Nmfr10VrQwvpFl112iW4O9Up-npZfi7eytXH6_vieVUaRlgujaDAOWG6AwIgKqo73HSm1XNSSSloK2CcVVg0hte6gQ7Xc9xhquuxYw1nU_R43LuNYTdAyqq34-HOaQ9hSIpUggnOiGQjKo6oiSGlCJ3aRtvr-KsIVgel6qBLHXQpyhVVR6Vj7uGU2wS_3o0_noNSsjmppSTsDwiUd9c</recordid><startdate>20150201</startdate><enddate>20150201</enddate><creator>张琪 张浩 张小文 徐韬 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diodes</topic><topic>Photoluminescence</topic><topic>Ultraviolet</topic><topic>光吸收</topic><topic>外量子效率</topic><topic>有机发光二极管</topic><topic>激基复合物</topic><topic>电致发光</topic><topic>紫外线辐射</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>张琪 张浩 张小文 徐韬 魏斌</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>张琪 张浩 张小文 徐韬 魏斌</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes</atitle><jtitle>Chinese physics B</jtitle><addtitle>Chinese Physics</addtitle><date>2015-02-01</date><risdate>2015</risdate><volume>24</volume><issue>2</issue><spage>253</spage><epage>258</epage><pages>253-258</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><eissn>1741-4199</eissn><abstract>We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes（UV OLEDs） using different heterojunction structures.It is found that an energy barrier of over 0.3 eV between the emissive layer（EML） and adjacent transport layer facilitates exciplex formation.The electron blocking layer effectively confines electrons in the EML,which contributes to pure UV emission and enhances efficiency.The change in EML thickness generates tunable UV emission from 376 nm to 406 nm.In addition,the UV emission excites low-energy organic function layers and produces photoluminescent emission.In UV OLED,avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency.A maximum external quantum efficiency of 1.2%with a UV emission peak of 376 nm is realized.</abstract><doi>10.1088/1674-1056/24/2/024222</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1674-1056 |
| ispartof | Chinese physics B, 2015-02, Vol.24 (2), p.253-258 |
| issn | 1674-1056 2058-3834 1741-4199 |
| language | eng |
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| source | IOP Publishing Journals |
| subjects | Blocking Electroluminescence Emission EML Formations Light absorption OLED Organic light emitting diodes Photoluminescence Ultraviolet 光吸收 外量子效率 有机发光二极管 激基复合物 电致发光 紫外线辐射 |
| title | Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes |
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