Microstructures and Magnetism of Silicon co-implanted with Manganese and Carbon ions
Dilute magnetic semiconductors based on transition metal doped silicon have attracted intense interest in recent years due to their compatibility with current silicon technology. Here we present transmission electron microscopy, secondary ion mass spectrometry and ferromagnetic resonance studies of...
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creator | Chow, L Vanfleet, R R Huang, M B LaRose, J Barco, E Del Arcuri, M Khallaf, H |
description | Dilute magnetic semiconductors based on transition metal doped silicon have attracted intense interest in recent years due to their compatibility with current silicon technology. Here we present transmission electron microscopy, secondary ion mass spectrometry and ferromagnetic resonance studies of silicon implanted with 1×1016 ions/cm2 of Mn ions and silicon co-implanted with both 1×1016 ions/cm2 of Mn ions and 2×1016 ions/cm2 of carbon ions at a substrate temperature of 350 °C. Afterward, the samples were annealed at temperatures between 800 and 1000°C. The SIMS results show a marked difference between the two specimens while the TEM results show similar features in terms of Mn precipitation and particle evolution. The carbon implanted specimens show additional features that appear to be amorphous silicon pockets within the crystalline implant region. Only one specimen (Mn only implant, unannealed) showed any ferromagnetic properties. |
doi_str_mv | 10.1088/1742-6596/281/1/012030 |
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fullrecord | <record><control><sourceid>proquest_O3W</sourceid><recordid>TN_cdi_proquest_miscellaneous_1753538931</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1753538931</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3590-417539fece9a04a85267ef5b8bd84aa5b40b8150ab126ced1a492fb82851d0a3</originalsourceid><addsrcrecordid>eNqFkE1LxDAQhoMouK7-BSl48VKbpE2bghdZ_IJdPLj3kKbpmqVNapIi_ntTKyrLonPJQJ53ZngAOEfwCkFKE1RkOM5JmSeYogQlEGGYwgMw-_44_NUfgxPnthCmoYoZWK-UsMZ5Owg_WOkirutoxTdaeuW6yDTRs2qVMDoSJlZd33LtZR29Kf8SML3hWjr5GVpwWwVMGe1OwVHDWyfPvt45WN_drhcP8fLp_nFxs4xFSkoYZ6ggadlIIUsOM04JzgvZkIpWNc04J1UGK4oI5BXCuZA14lmJm4piSlANeToHl9PY3prXQTrPOuWEbMON0gyOjeNJSssUBfRiB92awepwHMOkGAkMRyqfqFGJs7JhvVUdt-8MQTa6ZqNGNmpkwTVDbHIdgtc7QaE898GFt1y1_8fjKa5M_7NyL8v6ugk82sP_veMDkWqfzQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2579313201</pqid></control><display><type>article</type><title>Microstructures and Magnetism of Silicon co-implanted with Manganese and Carbon ions</title><source>Institute of Physics Open Access Journal Titles</source><creator>Chow, L ; Vanfleet, R R ; Huang, M B ; LaRose, J ; Barco, E Del ; Arcuri, M ; Khallaf, H</creator><creatorcontrib>Chow, L ; Vanfleet, R R ; Huang, M B ; LaRose, J ; Barco, E Del ; Arcuri, M ; Khallaf, H</creatorcontrib><description>Dilute magnetic semiconductors based on transition metal doped silicon have attracted intense interest in recent years due to their compatibility with current silicon technology. Here we present transmission electron microscopy, secondary ion mass spectrometry and ferromagnetic resonance studies of silicon implanted with 1×1016 ions/cm2 of Mn ions and silicon co-implanted with both 1×1016 ions/cm2 of Mn ions and 2×1016 ions/cm2 of carbon ions at a substrate temperature of 350 °C. Afterward, the samples were annealed at temperatures between 800 and 1000°C. The SIMS results show a marked difference between the two specimens while the TEM results show similar features in terms of Mn precipitation and particle evolution. The carbon implanted specimens show additional features that appear to be amorphous silicon pockets within the crystalline implant region. Only one specimen (Mn only implant, unannealed) showed any ferromagnetic properties.</description><identifier>ISSN: 1742-6596</identifier><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/281/1/012030</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Amorphous silicon ; Annealing ; Carbon ; Ferromagnetic resonance ; Ferromagnetism ; Implants ; Magnetic semiconductors ; Manganese ; Physics ; Secondary ion mass spectrometry ; Silicon ; Silicon substrates ; Substrates ; Transition metals</subject><ispartof>Journal of physics. Conference series, 2011-02, Vol.281 (1), p.012030-7</ispartof><rights>Copyright IOP Publishing Feb 2011</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3590-417539fece9a04a85267ef5b8bd84aa5b40b8150ab126ced1a492fb82851d0a3</citedby><cites>FETCH-LOGICAL-c3590-417539fece9a04a85267ef5b8bd84aa5b40b8150ab126ced1a492fb82851d0a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1742-6596/281/1/012030/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,1553,27628,27924,27925,53904,53931</link.rule.ids><linktorsrc>$$Uhttp://iopscience.iop.org/1742-6596/281/1/012030$$EView_record_in_IOP_Publishing$$FView_record_in_$$GIOP_Publishing</linktorsrc></links><search><creatorcontrib>Chow, L</creatorcontrib><creatorcontrib>Vanfleet, R R</creatorcontrib><creatorcontrib>Huang, M B</creatorcontrib><creatorcontrib>LaRose, J</creatorcontrib><creatorcontrib>Barco, E Del</creatorcontrib><creatorcontrib>Arcuri, M</creatorcontrib><creatorcontrib>Khallaf, H</creatorcontrib><title>Microstructures and Magnetism of Silicon co-implanted with Manganese and Carbon ions</title><title>Journal of physics. Conference series</title><description>Dilute magnetic semiconductors based on transition metal doped silicon have attracted intense interest in recent years due to their compatibility with current silicon technology. Here we present transmission electron microscopy, secondary ion mass spectrometry and ferromagnetic resonance studies of silicon implanted with 1×1016 ions/cm2 of Mn ions and silicon co-implanted with both 1×1016 ions/cm2 of Mn ions and 2×1016 ions/cm2 of carbon ions at a substrate temperature of 350 °C. Afterward, the samples were annealed at temperatures between 800 and 1000°C. The SIMS results show a marked difference between the two specimens while the TEM results show similar features in terms of Mn precipitation and particle evolution. The carbon implanted specimens show additional features that appear to be amorphous silicon pockets within the crystalline implant region. Only one specimen (Mn only implant, unannealed) showed any ferromagnetic properties.</description><subject>Amorphous silicon</subject><subject>Annealing</subject><subject>Carbon</subject><subject>Ferromagnetic resonance</subject><subject>Ferromagnetism</subject><subject>Implants</subject><subject>Magnetic semiconductors</subject><subject>Manganese</subject><subject>Physics</subject><subject>Secondary ion mass spectrometry</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Substrates</subject><subject>Transition metals</subject><issn>1742-6596</issn><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqFkE1LxDAQhoMouK7-BSl48VKbpE2bghdZ_IJdPLj3kKbpmqVNapIi_ntTKyrLonPJQJ53ZngAOEfwCkFKE1RkOM5JmSeYogQlEGGYwgMw-_44_NUfgxPnthCmoYoZWK-UsMZ5Owg_WOkirutoxTdaeuW6yDTRs2qVMDoSJlZd33LtZR29Kf8SML3hWjr5GVpwWwVMGe1OwVHDWyfPvt45WN_drhcP8fLp_nFxs4xFSkoYZ6ggadlIIUsOM04JzgvZkIpWNc04J1UGK4oI5BXCuZA14lmJm4piSlANeToHl9PY3prXQTrPOuWEbMON0gyOjeNJSssUBfRiB92awepwHMOkGAkMRyqfqFGJs7JhvVUdt-8MQTa6ZqNGNmpkwTVDbHIdgtc7QaE898GFt1y1_8fjKa5M_7NyL8v6ugk82sP_veMDkWqfzQ</recordid><startdate>20110201</startdate><enddate>20110201</enddate><creator>Chow, L</creator><creator>Vanfleet, R R</creator><creator>Huang, M B</creator><creator>LaRose, J</creator><creator>Barco, E Del</creator><creator>Arcuri, M</creator><creator>Khallaf, H</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7U5</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>20110201</creationdate><title>Microstructures and Magnetism of Silicon co-implanted with Manganese and Carbon ions</title><author>Chow, L ; Vanfleet, R R ; Huang, M B ; LaRose, J ; Barco, E Del ; Arcuri, M ; Khallaf, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3590-417539fece9a04a85267ef5b8bd84aa5b40b8150ab126ced1a492fb82851d0a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Amorphous silicon</topic><topic>Annealing</topic><topic>Carbon</topic><topic>Ferromagnetic resonance</topic><topic>Ferromagnetism</topic><topic>Implants</topic><topic>Magnetic semiconductors</topic><topic>Manganese</topic><topic>Physics</topic><topic>Secondary ion mass spectrometry</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>Substrates</topic><topic>Transition metals</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chow, L</creatorcontrib><creatorcontrib>Vanfleet, R R</creatorcontrib><creatorcontrib>Huang, M B</creatorcontrib><creatorcontrib>LaRose, J</creatorcontrib><creatorcontrib>Barco, E Del</creatorcontrib><creatorcontrib>Arcuri, M</creatorcontrib><creatorcontrib>Khallaf, H</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Access via ProQuest (Open Access)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>Journal of physics. Conference series</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chow, L</au><au>Vanfleet, R R</au><au>Huang, M B</au><au>LaRose, J</au><au>Barco, E Del</au><au>Arcuri, M</au><au>Khallaf, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microstructures and Magnetism of Silicon co-implanted with Manganese and Carbon ions</atitle><jtitle>Journal of physics. Conference series</jtitle><date>2011-02-01</date><risdate>2011</risdate><volume>281</volume><issue>1</issue><spage>012030</spage><epage>7</epage><pages>012030-7</pages><issn>1742-6596</issn><issn>1742-6588</issn><eissn>1742-6596</eissn><abstract>Dilute magnetic semiconductors based on transition metal doped silicon have attracted intense interest in recent years due to their compatibility with current silicon technology. Here we present transmission electron microscopy, secondary ion mass spectrometry and ferromagnetic resonance studies of silicon implanted with 1×1016 ions/cm2 of Mn ions and silicon co-implanted with both 1×1016 ions/cm2 of Mn ions and 2×1016 ions/cm2 of carbon ions at a substrate temperature of 350 °C. Afterward, the samples were annealed at temperatures between 800 and 1000°C. The SIMS results show a marked difference between the two specimens while the TEM results show similar features in terms of Mn precipitation and particle evolution. The carbon implanted specimens show additional features that appear to be amorphous silicon pockets within the crystalline implant region. Only one specimen (Mn only implant, unannealed) showed any ferromagnetic properties.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1742-6596/281/1/012030</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Amorphous silicon Annealing Carbon Ferromagnetic resonance Ferromagnetism Implants Magnetic semiconductors Manganese Physics Secondary ion mass spectrometry Silicon Silicon substrates Substrates Transition metals |
title | Microstructures and Magnetism of Silicon co-implanted with Manganese and Carbon ions |
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