The Study of Nickel on Copper Nitride Thin Films Deposited by Magnetron Sputtering
Ni-doped copper nitride films have been prepared by co-sputtering of Ni and Cu targets. The addition of Ni to Cu3N films reduced the intensity of the (111) diffraction peak, and lead a little angular shifts of the peaks. The films showed a large difference in reflectance in the infrared and visible...
Gespeichert in:
Veröffentlicht in: | Key engineering materials 2014-12, Vol.636, p.29-32 |
---|---|
Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 32 |
---|---|
container_issue | |
container_start_page | 29 |
container_title | Key engineering materials |
container_volume | 636 |
creator | Yang, Jian Bo Han, Jia Li, Xing Ao Yang, Tao Yang, Rong Yang, Jian Ping Gu, Min Fen Liu, Wen Jie |
description | Ni-doped copper nitride films have been prepared by co-sputtering of Ni and Cu targets. The addition of Ni to Cu3N films reduced the intensity of the (111) diffraction peak, and lead a little angular shifts of the peaks. The films showed a large difference in reflectance in the infrared and visible before and after thermal decomposition, which is applicable to optical recording media. The films change from a semiconductor to a conductor with the increased ratio of Ni in Cu3N films. |
doi_str_mv | 10.4028/www.scientific.net/KEM.636.29 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1753522504</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1753522504</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2139-96b9770ea32b80ff8011fee975ada17673e3720893e6b18d3df33f679fa623513</originalsourceid><addsrcrecordid>eNqNkEtLAzEUhQdRUKv_IRvBzYx5dJLJQkRqfWCroHUd0pkbG51mxiRD6b83UsGtq3u5nHMu58uyM4KLMabVxWazKUJtwUVrbF04iBeP03nBGS-o3MuOCOc0l0KW-2nHhOWyovwwOw7hA2NGKlIeZS-LFaDXODRb1Bn0ZOtPaFHn0KTre_DpEL1tAC1W1qFb264DuoG-CzZCg5ZbNNfv6a1Phtd-iBG8de8n2YHRbYDT3znK3m6ni8l9Pnu-e5hcz_KaEiZzyZdSCAya0WWFjakwIQZAilI3mgguGDBBcSUZ8CWpGtYYxgwX0mhOWUnYKDvf5fa--xogRLW2oYa21Q66ISgiSlZSWuJxkl7upLXvQvBgVO_tWvutIlj9sFSJpfpjqVIplViqxFJRmfxXO3_02oUI9Up9dIN3qd4_E74Bx2CE9g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1753522504</pqid></control><display><type>article</type><title>The Study of Nickel on Copper Nitride Thin Films Deposited by Magnetron Sputtering</title><source>Scientific.net Journals</source><creator>Yang, Jian Bo ; Han, Jia ; Li, Xing Ao ; Yang, Tao ; Yang, Rong ; Yang, Jian Ping ; Gu, Min Fen ; Liu, Wen Jie</creator><creatorcontrib>Yang, Jian Bo ; Han, Jia ; Li, Xing Ao ; Yang, Tao ; Yang, Rong ; Yang, Jian Ping ; Gu, Min Fen ; Liu, Wen Jie</creatorcontrib><description>Ni-doped copper nitride films have been prepared by co-sputtering of Ni and Cu targets. The addition of Ni to Cu3N films reduced the intensity of the (111) diffraction peak, and lead a little angular shifts of the peaks. The films showed a large difference in reflectance in the infrared and visible before and after thermal decomposition, which is applicable to optical recording media. The films change from a semiconductor to a conductor with the increased ratio of Ni in Cu3N films.</description><identifier>ISSN: 1013-9826</identifier><identifier>ISSN: 1662-9795</identifier><identifier>EISSN: 1662-9795</identifier><identifier>DOI: 10.4028/www.scientific.net/KEM.636.29</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><subject>Copper ; COPPER NITRIDE ; DEPOSITION ; Diffraction ; Infrared ; Nickel ; Nitrides ; Reflectivity ; SEMICONDUCTORS ; SPUTTERING ; THIN FILMS</subject><ispartof>Key engineering materials, 2014-12, Vol.636, p.29-32</ispartof><rights>2015 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2139-96b9770ea32b80ff8011fee975ada17673e3720893e6b18d3df33f679fa623513</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/3747?width=600</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Yang, Jian Bo</creatorcontrib><creatorcontrib>Han, Jia</creatorcontrib><creatorcontrib>Li, Xing Ao</creatorcontrib><creatorcontrib>Yang, Tao</creatorcontrib><creatorcontrib>Yang, Rong</creatorcontrib><creatorcontrib>Yang, Jian Ping</creatorcontrib><creatorcontrib>Gu, Min Fen</creatorcontrib><creatorcontrib>Liu, Wen Jie</creatorcontrib><title>The Study of Nickel on Copper Nitride Thin Films Deposited by Magnetron Sputtering</title><title>Key engineering materials</title><description>Ni-doped copper nitride films have been prepared by co-sputtering of Ni and Cu targets. The addition of Ni to Cu3N films reduced the intensity of the (111) diffraction peak, and lead a little angular shifts of the peaks. The films showed a large difference in reflectance in the infrared and visible before and after thermal decomposition, which is applicable to optical recording media. The films change from a semiconductor to a conductor with the increased ratio of Ni in Cu3N films.</description><subject>Copper</subject><subject>COPPER NITRIDE</subject><subject>DEPOSITION</subject><subject>Diffraction</subject><subject>Infrared</subject><subject>Nickel</subject><subject>Nitrides</subject><subject>Reflectivity</subject><subject>SEMICONDUCTORS</subject><subject>SPUTTERING</subject><subject>THIN FILMS</subject><issn>1013-9826</issn><issn>1662-9795</issn><issn>1662-9795</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqNkEtLAzEUhQdRUKv_IRvBzYx5dJLJQkRqfWCroHUd0pkbG51mxiRD6b83UsGtq3u5nHMu58uyM4KLMabVxWazKUJtwUVrbF04iBeP03nBGS-o3MuOCOc0l0KW-2nHhOWyovwwOw7hA2NGKlIeZS-LFaDXODRb1Bn0ZOtPaFHn0KTre_DpEL1tAC1W1qFb264DuoG-CzZCg5ZbNNfv6a1Phtd-iBG8de8n2YHRbYDT3znK3m6ni8l9Pnu-e5hcz_KaEiZzyZdSCAya0WWFjakwIQZAilI3mgguGDBBcSUZ8CWpGtYYxgwX0mhOWUnYKDvf5fa--xogRLW2oYa21Q66ISgiSlZSWuJxkl7upLXvQvBgVO_tWvutIlj9sFSJpfpjqVIplViqxFJRmfxXO3_02oUI9Up9dIN3qd4_E74Bx2CE9g</recordid><startdate>20141224</startdate><enddate>20141224</enddate><creator>Yang, Jian Bo</creator><creator>Han, Jia</creator><creator>Li, Xing Ao</creator><creator>Yang, Tao</creator><creator>Yang, Rong</creator><creator>Yang, Jian Ping</creator><creator>Gu, Min Fen</creator><creator>Liu, Wen Jie</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>H8G</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20141224</creationdate><title>The Study of Nickel on Copper Nitride Thin Films Deposited by Magnetron Sputtering</title><author>Yang, Jian Bo ; Han, Jia ; Li, Xing Ao ; Yang, Tao ; Yang, Rong ; Yang, Jian Ping ; Gu, Min Fen ; Liu, Wen Jie</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2139-96b9770ea32b80ff8011fee975ada17673e3720893e6b18d3df33f679fa623513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Copper</topic><topic>COPPER NITRIDE</topic><topic>DEPOSITION</topic><topic>Diffraction</topic><topic>Infrared</topic><topic>Nickel</topic><topic>Nitrides</topic><topic>Reflectivity</topic><topic>SEMICONDUCTORS</topic><topic>SPUTTERING</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Jian Bo</creatorcontrib><creatorcontrib>Han, Jia</creatorcontrib><creatorcontrib>Li, Xing Ao</creatorcontrib><creatorcontrib>Yang, Tao</creatorcontrib><creatorcontrib>Yang, Rong</creatorcontrib><creatorcontrib>Yang, Jian Ping</creatorcontrib><creatorcontrib>Gu, Min Fen</creatorcontrib><creatorcontrib>Liu, Wen Jie</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Key engineering materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Jian Bo</au><au>Han, Jia</au><au>Li, Xing Ao</au><au>Yang, Tao</au><au>Yang, Rong</au><au>Yang, Jian Ping</au><au>Gu, Min Fen</au><au>Liu, Wen Jie</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Study of Nickel on Copper Nitride Thin Films Deposited by Magnetron Sputtering</atitle><jtitle>Key engineering materials</jtitle><date>2014-12-24</date><risdate>2014</risdate><volume>636</volume><spage>29</spage><epage>32</epage><pages>29-32</pages><issn>1013-9826</issn><issn>1662-9795</issn><eissn>1662-9795</eissn><abstract>Ni-doped copper nitride films have been prepared by co-sputtering of Ni and Cu targets. The addition of Ni to Cu3N films reduced the intensity of the (111) diffraction peak, and lead a little angular shifts of the peaks. The films showed a large difference in reflectance in the infrared and visible before and after thermal decomposition, which is applicable to optical recording media. The films change from a semiconductor to a conductor with the increased ratio of Ni in Cu3N films.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/KEM.636.29</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1013-9826 |
ispartof | Key engineering materials, 2014-12, Vol.636, p.29-32 |
issn | 1013-9826 1662-9795 1662-9795 |
language | eng |
recordid | cdi_proquest_miscellaneous_1753522504 |
source | Scientific.net Journals |
subjects | Copper COPPER NITRIDE DEPOSITION Diffraction Infrared Nickel Nitrides Reflectivity SEMICONDUCTORS SPUTTERING THIN FILMS |
title | The Study of Nickel on Copper Nitride Thin Films Deposited by Magnetron Sputtering |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T13%3A39%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20Study%20of%20Nickel%20on%20Copper%20Nitride%20Thin%20Films%20Deposited%20by%20Magnetron%20Sputtering&rft.jtitle=Key%20engineering%20materials&rft.au=Yang,%20Jian%20Bo&rft.date=2014-12-24&rft.volume=636&rft.spage=29&rft.epage=32&rft.pages=29-32&rft.issn=1013-9826&rft.eissn=1662-9795&rft_id=info:doi/10.4028/www.scientific.net/KEM.636.29&rft_dat=%3Cproquest_cross%3E1753522504%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1753522504&rft_id=info:pmid/&rfr_iscdi=true |