Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are defined in a SiO2 mask on 2 in. Si wafers using nanoimprint lithography (NIL) for the growth of positioned GaAs NWs. To optimi...

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Veröffentlicht in:	Nano letters 2014-02, Vol.14 (2), p.960-966
Hauptverfasser:	Munshi, A. M, Dheeraj, D. L, Fauske, V. T, Kim, D. C, Huh, J, Reinertsen, J. F, Ahtapodov, L, Lee, K. D, Heidari, B, van Helvoort, A. T. J, Fimland, B. O, Weman, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Catalytic methods Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Devices Exact sciences and technology Gallium arsenide Gallium arsenides Lithography Materials science Methods of nanofabrication Molecular beam epitaxy Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanotechnology Nanowires Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum wires Silicon
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