Room-temperature antiferromagnetism in CuMnAs

We report on an experimental and theoretical study of CuMn–V compounds. In agreement with previous works we find low-temperature antiferromagnetism with Néel temperature of 50K in the cubic half-Heusler CuMnSb. We demonstrate that the orthorhombic CuMnAs is a room-temperature antiferromagnet. Our re...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of magnetism and magnetic materials 2012-04, Vol.324 (8), p.1606-1612
Hauptverfasser: Máca, F., Mašek, J., Stelmakhovych, O., Martí, X., Reichlová, H., Uhlířová, K., Beran, P., Wadley, P., Novák, V., Jungwirth, T.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1612
container_issue 8
container_start_page 1606
container_title Journal of magnetism and magnetic materials
container_volume 324
creator Máca, F.
Mašek, J.
Stelmakhovych, O.
Martí, X.
Reichlová, H.
Uhlířová, K.
Beran, P.
Wadley, P.
Novák, V.
Jungwirth, T.
description We report on an experimental and theoretical study of CuMn–V compounds. In agreement with previous works we find low-temperature antiferromagnetism with Néel temperature of 50K in the cubic half-Heusler CuMnSb. We demonstrate that the orthorhombic CuMnAs is a room-temperature antiferromagnet. Our results are based on X-ray diffraction, magnetization, transport, and differential thermal analysis measurements, and on density-functional theory calculations of the magnetic structure of CuMn–V compounds. In the discussion part of the paper we make a prediction, based on our density-functional theory calculations, that the electronic structure of CuMn–V compounds makes a transition from a semimetal to a semiconductor upon introducing the lighter group-V elements. ► We report experimental observation of high temperature antiferromagnetism in CuMnAs. ► The physical origin of the observation is discussed based on ab initio calculations. ► We predict semimetal to semiconductor transition of the electronic structure of CuMn–V compounds. ► We discuss the relevance of CuMn–V compounds for antiferromagnetic spintronics.
doi_str_mv 10.1016/j.jmmm.2011.12.017
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1753518696</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0304885311008900</els_id><sourcerecordid>1753518696</sourcerecordid><originalsourceid>FETCH-LOGICAL-c462t-d78e238070344337f9aaa52ee4df50756f93eb547740bd473b322af328f7ea8d3</originalsourceid><addsrcrecordid>eNqFkE1LAzEURbNQsFb_gKtuBDcz5jsZcFOKVqEiiK5DmnmRDJOZmswI_nuntLjU1ducey_vIHRFcEkwkbdN2cQYS4oJKQktMVEnaIYZ5oXWgp2h85wbjDHhWs5Q8dr3sRgg7iDZYUywsN0QPKTUR_vRwRByXIRusRqfu2W-QKfethkuj3eO3h_u31aPxeZl_bRabgrHJR2KWmmgTGOFGeeMKV9ZawUF4LUXWAnpKwZbwZXieFtzxbaMUusZ1V6B1TWbo5tD7y71nyPkwcSQHbSt7aAfsyFKMEG0rOT_KCa4okJXbELpAXWpzzmBN7sUok3fE7TnpGnMXp3ZqzOEmkndFLo-9tvsbOuT7VzIv0kq5PQorSbu7sDB5OUrQDLZBegc1CGBG0zdh79mfgArhYTF</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1010925893</pqid></control><display><type>article</type><title>Room-temperature antiferromagnetism in CuMnAs</title><source>Elsevier ScienceDirect Journals</source><creator>Máca, F. ; Mašek, J. ; Stelmakhovych, O. ; Martí, X. ; Reichlová, H. ; Uhlířová, K. ; Beran, P. ; Wadley, P. ; Novák, V. ; Jungwirth, T.</creator><creatorcontrib>Máca, F. ; Mašek, J. ; Stelmakhovych, O. ; Martí, X. ; Reichlová, H. ; Uhlířová, K. ; Beran, P. ; Wadley, P. ; Novák, V. ; Jungwirth, T.</creatorcontrib><description>We report on an experimental and theoretical study of CuMn–V compounds. In agreement with previous works we find low-temperature antiferromagnetism with Néel temperature of 50K in the cubic half-Heusler CuMnSb. We demonstrate that the orthorhombic CuMnAs is a room-temperature antiferromagnet. Our results are based on X-ray diffraction, magnetization, transport, and differential thermal analysis measurements, and on density-functional theory calculations of the magnetic structure of CuMn–V compounds. In the discussion part of the paper we make a prediction, based on our density-functional theory calculations, that the electronic structure of CuMn–V compounds makes a transition from a semimetal to a semiconductor upon introducing the lighter group-V elements. ► We report experimental observation of high temperature antiferromagnetism in CuMnAs. ► The physical origin of the observation is discussed based on ab initio calculations. ► We predict semimetal to semiconductor transition of the electronic structure of CuMn–V compounds. ► We discuss the relevance of CuMn–V compounds for antiferromagnetic spintronics.</description><identifier>ISSN: 0304-8853</identifier><identifier>DOI: 10.1016/j.jmmm.2011.12.017</identifier><identifier>CODEN: JMMMDC</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Antiferromagnet ; Antiferromagnetism ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Diffraction ; Electron density of states and band structure of crystalline solids ; Electron states ; Exact sciences and technology ; Magnetic properties and materials ; Magnetic semiconductors ; Magnetic structure ; Magnetism ; Magnetization ; Mathematical analysis ; Physics ; Semiconductor ; Semiconductor compounds ; Semiconductors ; Semimetal ; Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.) ; Studies of specific magnetic materials ; X-rays</subject><ispartof>Journal of magnetism and magnetic materials, 2012-04, Vol.324 (8), p.1606-1612</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c462t-d78e238070344337f9aaa52ee4df50756f93eb547740bd473b322af328f7ea8d3</citedby><cites>FETCH-LOGICAL-c462t-d78e238070344337f9aaa52ee4df50756f93eb547740bd473b322af328f7ea8d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0304885311008900$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=25638029$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Máca, F.</creatorcontrib><creatorcontrib>Mašek, J.</creatorcontrib><creatorcontrib>Stelmakhovych, O.</creatorcontrib><creatorcontrib>Martí, X.</creatorcontrib><creatorcontrib>Reichlová, H.</creatorcontrib><creatorcontrib>Uhlířová, K.</creatorcontrib><creatorcontrib>Beran, P.</creatorcontrib><creatorcontrib>Wadley, P.</creatorcontrib><creatorcontrib>Novák, V.</creatorcontrib><creatorcontrib>Jungwirth, T.</creatorcontrib><title>Room-temperature antiferromagnetism in CuMnAs</title><title>Journal of magnetism and magnetic materials</title><description>We report on an experimental and theoretical study of CuMn–V compounds. In agreement with previous works we find low-temperature antiferromagnetism with Néel temperature of 50K in the cubic half-Heusler CuMnSb. We demonstrate that the orthorhombic CuMnAs is a room-temperature antiferromagnet. Our results are based on X-ray diffraction, magnetization, transport, and differential thermal analysis measurements, and on density-functional theory calculations of the magnetic structure of CuMn–V compounds. In the discussion part of the paper we make a prediction, based on our density-functional theory calculations, that the electronic structure of CuMn–V compounds makes a transition from a semimetal to a semiconductor upon introducing the lighter group-V elements. ► We report experimental observation of high temperature antiferromagnetism in CuMnAs. ► The physical origin of the observation is discussed based on ab initio calculations. ► We predict semimetal to semiconductor transition of the electronic structure of CuMn–V compounds. ► We discuss the relevance of CuMn–V compounds for antiferromagnetic spintronics.</description><subject>Antiferromagnet</subject><subject>Antiferromagnetism</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Diffraction</subject><subject>Electron density of states and band structure of crystalline solids</subject><subject>Electron states</subject><subject>Exact sciences and technology</subject><subject>Magnetic properties and materials</subject><subject>Magnetic semiconductors</subject><subject>Magnetic structure</subject><subject>Magnetism</subject><subject>Magnetization</subject><subject>Mathematical analysis</subject><subject>Physics</subject><subject>Semiconductor</subject><subject>Semiconductor compounds</subject><subject>Semiconductors</subject><subject>Semimetal</subject><subject>Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)</subject><subject>Studies of specific magnetic materials</subject><subject>X-rays</subject><issn>0304-8853</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEURbNQsFb_gKtuBDcz5jsZcFOKVqEiiK5DmnmRDJOZmswI_nuntLjU1ducey_vIHRFcEkwkbdN2cQYS4oJKQktMVEnaIYZ5oXWgp2h85wbjDHhWs5Q8dr3sRgg7iDZYUywsN0QPKTUR_vRwRByXIRusRqfu2W-QKfethkuj3eO3h_u31aPxeZl_bRabgrHJR2KWmmgTGOFGeeMKV9ZawUF4LUXWAnpKwZbwZXieFtzxbaMUusZ1V6B1TWbo5tD7y71nyPkwcSQHbSt7aAfsyFKMEG0rOT_KCa4okJXbELpAXWpzzmBN7sUok3fE7TnpGnMXp3ZqzOEmkndFLo-9tvsbOuT7VzIv0kq5PQorSbu7sDB5OUrQDLZBegc1CGBG0zdh79mfgArhYTF</recordid><startdate>20120401</startdate><enddate>20120401</enddate><creator>Máca, F.</creator><creator>Mašek, J.</creator><creator>Stelmakhovych, O.</creator><creator>Martí, X.</creator><creator>Reichlová, H.</creator><creator>Uhlířová, K.</creator><creator>Beran, P.</creator><creator>Wadley, P.</creator><creator>Novák, V.</creator><creator>Jungwirth, T.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7SR</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>20120401</creationdate><title>Room-temperature antiferromagnetism in CuMnAs</title><author>Máca, F. ; Mašek, J. ; Stelmakhovych, O. ; Martí, X. ; Reichlová, H. ; Uhlířová, K. ; Beran, P. ; Wadley, P. ; Novák, V. ; Jungwirth, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c462t-d78e238070344337f9aaa52ee4df50756f93eb547740bd473b322af328f7ea8d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Antiferromagnet</topic><topic>Antiferromagnetism</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Diffraction</topic><topic>Electron density of states and band structure of crystalline solids</topic><topic>Electron states</topic><topic>Exact sciences and technology</topic><topic>Magnetic properties and materials</topic><topic>Magnetic semiconductors</topic><topic>Magnetic structure</topic><topic>Magnetism</topic><topic>Magnetization</topic><topic>Mathematical analysis</topic><topic>Physics</topic><topic>Semiconductor</topic><topic>Semiconductor compounds</topic><topic>Semiconductors</topic><topic>Semimetal</topic><topic>Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)</topic><topic>Studies of specific magnetic materials</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Máca, F.</creatorcontrib><creatorcontrib>Mašek, J.</creatorcontrib><creatorcontrib>Stelmakhovych, O.</creatorcontrib><creatorcontrib>Martí, X.</creatorcontrib><creatorcontrib>Reichlová, H.</creatorcontrib><creatorcontrib>Uhlířová, K.</creatorcontrib><creatorcontrib>Beran, P.</creatorcontrib><creatorcontrib>Wadley, P.</creatorcontrib><creatorcontrib>Novák, V.</creatorcontrib><creatorcontrib>Jungwirth, T.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>Journal of magnetism and magnetic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Máca, F.</au><au>Mašek, J.</au><au>Stelmakhovych, O.</au><au>Martí, X.</au><au>Reichlová, H.</au><au>Uhlířová, K.</au><au>Beran, P.</au><au>Wadley, P.</au><au>Novák, V.</au><au>Jungwirth, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room-temperature antiferromagnetism in CuMnAs</atitle><jtitle>Journal of magnetism and magnetic materials</jtitle><date>2012-04-01</date><risdate>2012</risdate><volume>324</volume><issue>8</issue><spage>1606</spage><epage>1612</epage><pages>1606-1612</pages><issn>0304-8853</issn><coden>JMMMDC</coden><abstract>We report on an experimental and theoretical study of CuMn–V compounds. In agreement with previous works we find low-temperature antiferromagnetism with Néel temperature of 50K in the cubic half-Heusler CuMnSb. We demonstrate that the orthorhombic CuMnAs is a room-temperature antiferromagnet. Our results are based on X-ray diffraction, magnetization, transport, and differential thermal analysis measurements, and on density-functional theory calculations of the magnetic structure of CuMn–V compounds. In the discussion part of the paper we make a prediction, based on our density-functional theory calculations, that the electronic structure of CuMn–V compounds makes a transition from a semimetal to a semiconductor upon introducing the lighter group-V elements. ► We report experimental observation of high temperature antiferromagnetism in CuMnAs. ► The physical origin of the observation is discussed based on ab initio calculations. ► We predict semimetal to semiconductor transition of the electronic structure of CuMn–V compounds. ► We discuss the relevance of CuMn–V compounds for antiferromagnetic spintronics.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jmmm.2011.12.017</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0304-8853
ispartof Journal of magnetism and magnetic materials, 2012-04, Vol.324 (8), p.1606-1612
issn 0304-8853
language eng
recordid cdi_proquest_miscellaneous_1753518696
source Elsevier ScienceDirect Journals
subjects Antiferromagnet
Antiferromagnetism
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Diffraction
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Magnetic properties and materials
Magnetic semiconductors
Magnetic structure
Magnetism
Magnetization
Mathematical analysis
Physics
Semiconductor
Semiconductor compounds
Semiconductors
Semimetal
Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
Studies of specific magnetic materials
X-rays
title Room-temperature antiferromagnetism in CuMnAs
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T09%3A02%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Room-temperature%20antiferromagnetism%20in%20CuMnAs&rft.jtitle=Journal%20of%20magnetism%20and%20magnetic%20materials&rft.au=M%C3%A1ca,%20F.&rft.date=2012-04-01&rft.volume=324&rft.issue=8&rft.spage=1606&rft.epage=1612&rft.pages=1606-1612&rft.issn=0304-8853&rft.coden=JMMMDC&rft_id=info:doi/10.1016/j.jmmm.2011.12.017&rft_dat=%3Cproquest_cross%3E1753518696%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1010925893&rft_id=info:pmid/&rft_els_id=S0304885311008900&rfr_iscdi=true