New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage
A new SOI power device with multi-region high-concentration fixed charge(MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer(BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversi...
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Veröffentlicht in: | Chinese physics B 2015-03, Vol.24 (3), p.308-312 |
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creator | 李琦 李海鸥 唐宁 翟江辉 宋树祥 |
description | A new SOI power device with multi-region high-concentration fixed charge(MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer(BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS. |
doi_str_mv | 10.1088/1674-1056/24/3/037203 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1753513876</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>663918761</cqvip_id><sourcerecordid>1753513876</sourcerecordid><originalsourceid>FETCH-LOGICAL-c313t-c8d83a82340ab886fcce4fb5c0c4ff047b92fba980073e3f29c40264f03a1be53</originalsourceid><addsrcrecordid>eNo9kEFvEzEQRq0KJELhJyBZnLgsGXu8u84RVVAqVfQAPVte73jXZWOnttOUf0-iVD2NNHrvOzzGPgn4KkDrteh61Qhou7VUa1wD9hLwgq0ktLpBjeoNW70y79j7Uh4AOgESV6z8ogP_fXfDd-lAmY_0FBzxQ6gz3-6XGppMU0iRz2GaG5eio1izraeXD8808hArZW-PkpttnojbOPI6E9-mkRaePB8y2b9jOkT-lJZqJ_rA3nq7FPr4ci_Z_Y_vf65-Nrd31zdX324bhwJr4_So0WqJCuygdeedI-WH1oFT3oPqh430g91ogB4Jvdw4BbJTHtCKgVq8ZF_Ou7ucHvdUqtmG4mhZbKS0L0b0LbYCdd8d0faMupxKyeTNLoetzf-MAHOKbE4BzSmgkcqgOUc-ep9fvDnF6THE6VXsOtyI47bA_7UqfHc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1753513876</pqid></control><display><type>article</type><title>New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage</title><source>IOP Publishing Journals</source><creator>李琦 李海鸥 唐宁 翟江辉 宋树祥</creator><creatorcontrib>李琦 李海鸥 唐宁 翟江辉 宋树祥</creatorcontrib><description>A new SOI power device with multi-region high-concentration fixed charge(MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer(BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>EISSN: 1741-4199</identifier><identifier>DOI: 10.1088/1674-1056/24/3/037203</identifier><language>eng</language><subject>Breakdown ; Charge ; Drains ; Electric potential ; Electronic devices ; Mathematical models ; Optimization ; Oxides ; SOI ; Voltage ; 击穿电压 ; 功率器件 ; 多区域 ; 模型开发 ; 浓度 ; 界面电荷 ; 绝缘</subject><ispartof>Chinese physics B, 2015-03, Vol.24 (3), p.308-312</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c313t-c8d83a82340ab886fcce4fb5c0c4ff047b92fba980073e3f29c40264f03a1be53</citedby><cites>FETCH-LOGICAL-c313t-c8d83a82340ab886fcce4fb5c0c4ff047b92fba980073e3f29c40264f03a1be53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>李琦 李海鸥 唐宁 翟江辉 宋树祥</creatorcontrib><title>New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage</title><title>Chinese physics B</title><addtitle>Chinese Physics</addtitle><description>A new SOI power device with multi-region high-concentration fixed charge(MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer(BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.</description><subject>Breakdown</subject><subject>Charge</subject><subject>Drains</subject><subject>Electric potential</subject><subject>Electronic devices</subject><subject>Mathematical models</subject><subject>Optimization</subject><subject>Oxides</subject><subject>SOI</subject><subject>Voltage</subject><subject>击穿电压</subject><subject>功率器件</subject><subject>多区域</subject><subject>模型开发</subject><subject>浓度</subject><subject>界面电荷</subject><subject>绝缘</subject><issn>1674-1056</issn><issn>2058-3834</issn><issn>1741-4199</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo9kEFvEzEQRq0KJELhJyBZnLgsGXu8u84RVVAqVfQAPVte73jXZWOnttOUf0-iVD2NNHrvOzzGPgn4KkDrteh61Qhou7VUa1wD9hLwgq0ktLpBjeoNW70y79j7Uh4AOgESV6z8ogP_fXfDd-lAmY_0FBzxQ6gz3-6XGppMU0iRz2GaG5eio1izraeXD8808hArZW-PkpttnojbOPI6E9-mkRaePB8y2b9jOkT-lJZqJ_rA3nq7FPr4ci_Z_Y_vf65-Nrd31zdX324bhwJr4_So0WqJCuygdeedI-WH1oFT3oPqh430g91ogB4Jvdw4BbJTHtCKgVq8ZF_Ou7ucHvdUqtmG4mhZbKS0L0b0LbYCdd8d0faMupxKyeTNLoetzf-MAHOKbE4BzSmgkcqgOUc-ep9fvDnF6THE6VXsOtyI47bA_7UqfHc</recordid><startdate>20150301</startdate><enddate>20150301</enddate><creator>李琦 李海鸥 唐宁 翟江辉 宋树祥</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20150301</creationdate><title>New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage</title><author>李琦 李海鸥 唐宁 翟江辉 宋树祥</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c313t-c8d83a82340ab886fcce4fb5c0c4ff047b92fba980073e3f29c40264f03a1be53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Breakdown</topic><topic>Charge</topic><topic>Drains</topic><topic>Electric potential</topic><topic>Electronic devices</topic><topic>Mathematical models</topic><topic>Optimization</topic><topic>Oxides</topic><topic>SOI</topic><topic>Voltage</topic><topic>击穿电压</topic><topic>功率器件</topic><topic>多区域</topic><topic>模型开发</topic><topic>浓度</topic><topic>界面电荷</topic><topic>绝缘</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>李琦 李海鸥 唐宁 翟江辉 宋树祥</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>李琦 李海鸥 唐宁 翟江辉 宋树祥</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage</atitle><jtitle>Chinese physics B</jtitle><addtitle>Chinese Physics</addtitle><date>2015-03-01</date><risdate>2015</risdate><volume>24</volume><issue>3</issue><spage>308</spage><epage>312</epage><pages>308-312</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><eissn>1741-4199</eissn><abstract>A new SOI power device with multi-region high-concentration fixed charge(MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer(BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.</abstract><doi>10.1088/1674-1056/24/3/037203</doi><tpages>5</tpages></addata></record> |
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subjects | Breakdown Charge Drains Electric potential Electronic devices Mathematical models Optimization Oxides SOI Voltage 击穿电压 功率器件 多区域 模型开发 浓度 界面电荷 绝缘 |
title | New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage |
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