Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature
The annealing behaviour of 400 keV Er ions at a fluence of 2×10^15 cm^-2 implanted into silicon-on-insulator（SOI） samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He^2＋ ions with a multiple scattering model.It is found that the damage close to the SOI surface is almost re...
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| Veröffentlicht in: | Chinese physics B 2012-06, Vol.21 (6), p.385-388 |
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| container_issue | 6 |
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| container_title | Chinese physics B |
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| creator | 秦希峰 李洪珍 李双 冀子武 王绘凝 王凤翔 付刚 |
| description | The annealing behaviour of 400 keV Er ions at a fluence of 2×10^15 cm^-2 implanted into silicon-on-insulator（SOI） samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He^2＋ ions with a multiple scattering model.It is found that the damage close to the SOI surface is almost removed after being annealed in O2 and N2 atmospheres,successively,at ℃,and that only a small number of the Er atoms segregated to the surface of the SOI sample,whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen.For the SOI sample co-implanted with Er and O ions,there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at ℃. |
| doi_str_mv | 10.1088/1674-1056/21/6/066105 |
| format | Article |
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oxygen.For the SOI sample co-implanted with Er and O ions,there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at ℃.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>EISSN: 1741-4199</identifier><identifier>DOI: 10.1088/1674-1056/21/6/066105</identifier><language>eng</language><subject>Affinity ; Annealing ; Atmospheres ; Atomic properties ; Backscattering ; Diffusion ; Erbium ; Er离子 ; Scattering ; Spectrometry ; 卢瑟福背散射 ; 原子扩散 ; 外扩散 ; 绝缘体上硅 ; 表面 ; 退火 ; 高温</subject><ispartof>Chinese physics B, 2012-06, Vol.21 (6), 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found that the damage close to the SOI surface is almost removed after being annealed in O2 and N2 atmospheres,successively,at ℃,and that only a small number of the Er atoms segregated to the surface of the SOI sample,whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen.For the SOI sample co-implanted with Er and O ions,there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at ℃.</description><subject>Affinity</subject><subject>Annealing</subject><subject>Atmospheres</subject><subject>Atomic 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number of the Er atoms segregated to the surface of the SOI sample,whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen.For the SOI sample co-implanted with Er and O ions,there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at ℃.</abstract><doi>10.1088/1674-1056/21/6/066105</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1674-1056 |
| ispartof | Chinese physics B, 2012-06, Vol.21 (6), p.385-388 |
| issn | 1674-1056 2058-3834 1741-4199 |
| language | eng |
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| source | IOP Publishing Journals |
| subjects | Affinity Annealing Atmospheres Atomic properties Backscattering Diffusion Erbium Er离子 Scattering Spectrometry 卢瑟福背散射 原子扩散 外扩散 绝缘体上硅 表面 退火 高温 |
| title | Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature |
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