Direct extraction of mobility in pentacene OFETs using C-V and I-V measurements

Mobility was extracted from top-contact pentacene organic field effect transistors with minimal assumptions. Low-frequency capacitance-voltage (C-V) measurements were used to calculate the sheet charge density of the channel, and current-voltage measurements with low drain-to-source voltage were use...

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Veröffentlicht in:	IEEE electron device letters 2005-10, Vol.26 (10), p.716-718
Hauptverfasser:	Ryu, K., Kymissis, I., Bulovic, V., Sodini, C.G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Capacitance measurement capacitance-voltage (C-V) Capacitance-voltage characteristics Channels characterization Charge measurement Crystals Current measurement Density measurement Electric potential Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Field effect transistors Gates Low voltage Mathematical analysis mobility MOSFETs OFETs organic field-effect transistors (OFETs) organic transistor Pentacene Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Transistors Voltage
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