Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes
We have examined the carrier injection process of axial nanowire light-emitting diode (LED) structures and identified that poor carrier injection efficiency, due to the large surface recombination, is the primary cause for the extremely low output power of phosphor-free nanowire white LEDs. We have...
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| Veröffentlicht in: | Nano letters 2013-11, Vol.13 (11), p.5437-5442 |
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| container_title | Nano letters |
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| creator | Nguyen, Hieu Pham Trung Zhang, Shaofei Connie, Ashfiqua T Kibria, Md Golam Wang, Qi Shih, Ishiang Mi, Zetian |
| description | We have examined the carrier injection process of axial nanowire light-emitting diode (LED) structures and identified that poor carrier injection efficiency, due to the large surface recombination, is the primary cause for the extremely low output power of phosphor-free nanowire white LEDs. We have further developed InGaN/GaN/AlGaN dot-in-a-wire core–shell white LEDs on Si substrate, which can break the carrier injection efficiency bottleneck, leading to a massive enhancement in the output power. At room temperature, the devices can exhibit an output power of ∼1.5 mW, which is more than 2 orders of magnitude stronger than nanowire LEDs without shell coverage. Additionally, such phosphor-free nanowire white LEDs can deliver an unprecedentedly high color rendering index of ∼92–98 in both the warm and cool white regions, with the color rendering capability approaching that of an ideal light source, i.e. a blackbody. |
| doi_str_mv | 10.1021/nl4030165 |
| format | Article |
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We have further developed InGaN/GaN/AlGaN dot-in-a-wire core–shell white LEDs on Si substrate, which can break the carrier injection efficiency bottleneck, leading to a massive enhancement in the output power. At room temperature, the devices can exhibit an output power of ∼1.5 mW, which is more than 2 orders of magnitude stronger than nanowire LEDs without shell coverage. Additionally, such phosphor-free nanowire white LEDs can deliver an unprecedentedly high color rendering index of ∼92–98 in both the warm and cool white regions, with the color rendering capability approaching that of an ideal light source, i.e. a blackbody.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl4030165</identifier><identifier>PMID: 24074440</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Applied sciences ; Breaking ; Carrier injection ; Color ; Cross-disciplinary physics: materials science; rheology ; Electronics ; Exact sciences and technology ; Gallium nitrides ; Indium gallium nitrides ; Light-emitting diodes ; Materials science ; Molecular electronics, nanoelectronics ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Nanowires ; Optoelectronic devices ; Physics ; Quantum wires ; Rendering ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Nano letters, 2013-11, Vol.13 (11), p.5437-5442</ispartof><rights>Copyright © 2013 American Chemical Society</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a444t-c6e18bf6376d54f4f971ae37879bbddee51e703fde3c4d2dba6e02777858b243</citedby><cites>FETCH-LOGICAL-a444t-c6e18bf6376d54f4f971ae37879bbddee51e703fde3c4d2dba6e02777858b243</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl4030165$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl4030165$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>315,781,785,2766,27081,27929,27930,56743,56793</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27998376$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/24074440$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Nguyen, Hieu Pham Trung</creatorcontrib><creatorcontrib>Zhang, Shaofei</creatorcontrib><creatorcontrib>Connie, Ashfiqua T</creatorcontrib><creatorcontrib>Kibria, Md Golam</creatorcontrib><creatorcontrib>Wang, Qi</creatorcontrib><creatorcontrib>Shih, Ishiang</creatorcontrib><creatorcontrib>Mi, Zetian</creatorcontrib><title>Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>We have examined the carrier injection process of axial nanowire light-emitting diode (LED) structures and identified that poor carrier injection efficiency, due to the large surface recombination, is the primary cause for the extremely low output power of phosphor-free nanowire white LEDs. We have further developed InGaN/GaN/AlGaN dot-in-a-wire core–shell white LEDs on Si substrate, which can break the carrier injection efficiency bottleneck, leading to a massive enhancement in the output power. At room temperature, the devices can exhibit an output power of ∼1.5 mW, which is more than 2 orders of magnitude stronger than nanowire LEDs without shell coverage. Additionally, such phosphor-free nanowire white LEDs can deliver an unprecedentedly high color rendering index of ∼92–98 in both the warm and cool white regions, with the color rendering capability approaching that of an ideal light source, i.e. a blackbody.</description><subject>Applied sciences</subject><subject>Breaking</subject><subject>Carrier injection</subject><subject>Color</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium nitrides</subject><subject>Indium gallium nitrides</subject><subject>Light-emitting diodes</subject><subject>Materials science</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanowires</subject><subject>Optoelectronic devices</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Rendering</subject><subject>Semiconductor electronics. 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Solid state devices</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqF0LtOwzAUBmALgbgPvADyggRDwI7t2BmhXKUKGCoxRo5zQlxSu9iuEG9PUEtZkJh8hk__Of4ROqLknJKcXrieE0ZoITbQLhWMZEVZ5pvrWfEdtBfjlBBSMkG20U7OieSck11UXQXQb9a94tQBHukQLAT84KZgkvUOX_mUenBg3rBv8XPn47zzIbsNAPhRO_9hA-CXzibAY_vapexmZlP6zru2voF4gLZa3Uc4XL37aHJ7MxndZ-Onu4fR5TjTwx0pMwVQVbcFk0UjeMvbUlINTCpZ1nXTAAgKkrC2AWZ4kze1LoDkUkolVJ1zto9Ol7Hz4N8XEFM1s9FA32sHfhErKgXjqlSq-J9yoQRhhSIDPVtSE3yMAdpqHuxMh8-Kkuq7-Wrd_GCPV7GLegbNWv5UPYCTFdDR6L4N2hkbf50sSzV8_9dpE6upXwQ39PbHwi82cZYi</recordid><startdate>20131113</startdate><enddate>20131113</enddate><creator>Nguyen, Hieu Pham Trung</creator><creator>Zhang, Shaofei</creator><creator>Connie, Ashfiqua T</creator><creator>Kibria, Md Golam</creator><creator>Wang, Qi</creator><creator>Shih, Ishiang</creator><creator>Mi, Zetian</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20131113</creationdate><title>Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes</title><author>Nguyen, Hieu Pham Trung ; Zhang, Shaofei ; Connie, Ashfiqua T ; Kibria, Md Golam ; Wang, Qi ; Shih, Ishiang ; Mi, Zetian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a444t-c6e18bf6376d54f4f971ae37879bbddee51e703fde3c4d2dba6e02777858b243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied sciences</topic><topic>Breaking</topic><topic>Carrier injection</topic><topic>Color</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium nitrides</topic><topic>Indium gallium nitrides</topic><topic>Light-emitting diodes</topic><topic>Materials science</topic><topic>Molecular electronics, nanoelectronics</topic><topic>Nanocrystalline materials</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanowires</topic><topic>Optoelectronic devices</topic><topic>Physics</topic><topic>Quantum wires</topic><topic>Rendering</topic><topic>Semiconductor electronics. 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Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nguyen, Hieu Pham Trung</creatorcontrib><creatorcontrib>Zhang, Shaofei</creatorcontrib><creatorcontrib>Connie, Ashfiqua T</creatorcontrib><creatorcontrib>Kibria, Md Golam</creatorcontrib><creatorcontrib>Wang, Qi</creatorcontrib><creatorcontrib>Shih, Ishiang</creatorcontrib><creatorcontrib>Mi, Zetian</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nguyen, Hieu Pham Trung</au><au>Zhang, Shaofei</au><au>Connie, Ashfiqua T</au><au>Kibria, Md Golam</au><au>Wang, Qi</au><au>Shih, Ishiang</au><au>Mi, Zetian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2013-11-13</date><risdate>2013</risdate><volume>13</volume><issue>11</issue><spage>5437</spage><epage>5442</epage><pages>5437-5442</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>We have examined the carrier injection process of axial nanowire light-emitting diode (LED) structures and identified that poor carrier injection efficiency, due to the large surface recombination, is the primary cause for the extremely low output power of phosphor-free nanowire white LEDs. We have further developed InGaN/GaN/AlGaN dot-in-a-wire core–shell white LEDs on Si substrate, which can break the carrier injection efficiency bottleneck, leading to a massive enhancement in the output power. At room temperature, the devices can exhibit an output power of ∼1.5 mW, which is more than 2 orders of magnitude stronger than nanowire LEDs without shell coverage. Additionally, such phosphor-free nanowire white LEDs can deliver an unprecedentedly high color rendering index of ∼92–98 in both the warm and cool white regions, with the color rendering capability approaching that of an ideal light source, i.e. a blackbody.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>24074440</pmid><doi>10.1021/nl4030165</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Breaking Carrier injection Color Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Gallium nitrides Indium gallium nitrides Light-emitting diodes Materials science Molecular electronics, nanoelectronics Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanowires Optoelectronic devices Physics Quantum wires Rendering Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes |
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