Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa sub(4)Se sub(8)

We study the Mott insulator compound GaTa sub(4)Se sub(8) in which we previously discovered an electric-field-induced resistive transition. We show that the resistive switching is associated to the appearance of metallic and super-insulating nanodomains by means of scanning tunneling microscopy/spec...

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Veröffentlicht in:	Nano letters 2013-08, Vol.13 (8), p.3648-3653-3648-3653
Hauptverfasser:	Dubost, Vincent, Cren, Tristan, Vaju, Cristian, Cario, Laurent, Corraze, Benoit, Janod, Etienne, Debontridder, Francois, Roditchev, Dimitri
Format:	Artikel
Sprache:	eng
Schlagworte:	Devices Electronics Insulators Nanostructure Random access memory Scanning tunneling microscopy Spectroscopy Switching
Online-Zugang:	Volltext
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