Observation of Single Electron Transport via Multiple Quantum States of a Silicon Quantum Dot at Room Temperature

Single electron transport through multiple quantum levels is realized in a Si quantum-dot device at room-temperature conditions. The energy spacing of more than triple the omnipresent thermal energy is obtained from an extremely small ellipsoidal Si quantum dot, and high charge stability is attained...

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Veröffentlicht in:	Nano letters 2014-01, Vol.14 (1), p.71-77
Hauptverfasser:	Lee, Sejoon, Lee, Youngmin, Song, Emil B, Hiramoto, Toshiro
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Charge Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Devices Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in multilayers, nanoscale materials and structures Electronics Exact sciences and technology Materials science Molecular electronics, nanoelectronics Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanostructure Physics Quantum dots Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Single electrons Stability Transport
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