Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

Filamentary-based oxide resistive memory is considered as a disruptive technology for nonvolatile data storage and reconfigurable logic. Currently accepted models explain the resistive switching in these devices through the presence/absence of a conductive filament (CF) that is described as a revers...

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Veröffentlicht in:	Nano letters 2015-12, Vol.15 (12), p.7970-7975
Hauptverfasser:	Celano, Umberto, Goux, Ludovic, Degraeve, Robin, Fantini, Andrea, Richard, Olivier, Bender, Hugo, Jurczak, Malgorzata, Vandervorst, Wilfried
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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