Doping-Induced Universal Conductance Fluctuations in GaN Nanowires
The transport properties of Ge-doped single GaN nanowires are investigated, which exhibit a weak localization effect as well as universal conductance fluctuations at low temperatures. By analyzing these quantum interference effects, the electron phase coherence length was determined. Its temperature...
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| Veröffentlicht in: | Nano letters 2015-12, Vol.15 (12), p.7822-7828 |
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| container_title | Nano letters |
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| creator | Elm, Matthias T Uredat, Patrick Binder, Jan Ostheim, Lars Schäfer, Markus Hille, Pascal Müßener, Jan Schörmann, Jörg Eickhoff, Martin Klar, Peter J |
| description | The transport properties of Ge-doped single GaN nanowires are investigated, which exhibit a weak localization effect as well as universal conductance fluctuations at low temperatures. By analyzing these quantum interference effects, the electron phase coherence length was determined. Its temperature dependence indicates that in the case of highly doped nanowires electron–electron scattering is the dominant dephasing mechanism, while for the slightly doped nanowires dephasing originates from Nyquist-scattering. The change of the dominant scattering mechanism is attributed to a modification of the carrier confinement caused by the Ge-doping. The results demonstrate that the phase coherence length can be tuned by the donor concentration making Ge-doped GaN nanowires an ideal model system for studying the influence of impurities on quantum-interference effects in mesoscopic and nanoscale systems. |
| doi_str_mv | 10.1021/acs.nanolett.5b02332 |
| format | Article |
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By analyzing these quantum interference effects, the electron phase coherence length was determined. Its temperature dependence indicates that in the case of highly doped nanowires electron–electron scattering is the dominant dephasing mechanism, while for the slightly doped nanowires dephasing originates from Nyquist-scattering. The change of the dominant scattering mechanism is attributed to a modification of the carrier confinement caused by the Ge-doping. The results demonstrate that the phase coherence length can be tuned by the donor concentration making Ge-doped GaN nanowires an ideal model system for studying the influence of impurities on quantum-interference effects in mesoscopic and nanoscale systems.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/acs.nanolett.5b02332</identifier><identifier>PMID: 26544014</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><ispartof>Nano letters, 2015-12, Vol.15 (12), p.7822-7828</ispartof><rights>Copyright © 2015 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a414t-51ec7a604156a1fc5ee7a818f95a4a0bab2b5c69b9aa6a5ba8337d793b2cb2453</citedby><cites>FETCH-LOGICAL-a414t-51ec7a604156a1fc5ee7a818f95a4a0bab2b5c69b9aa6a5ba8337d793b2cb2453</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b02332$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acs.nanolett.5b02332$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,2752,27053,27901,27902,56713,56763</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/26544014$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Elm, Matthias T</creatorcontrib><creatorcontrib>Uredat, Patrick</creatorcontrib><creatorcontrib>Binder, Jan</creatorcontrib><creatorcontrib>Ostheim, Lars</creatorcontrib><creatorcontrib>Schäfer, Markus</creatorcontrib><creatorcontrib>Hille, Pascal</creatorcontrib><creatorcontrib>Müßener, Jan</creatorcontrib><creatorcontrib>Schörmann, Jörg</creatorcontrib><creatorcontrib>Eickhoff, Martin</creatorcontrib><creatorcontrib>Klar, Peter J</creatorcontrib><title>Doping-Induced Universal Conductance Fluctuations in GaN Nanowires</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>The transport properties of Ge-doped single GaN nanowires are investigated, which exhibit a weak localization effect as well as universal conductance fluctuations at low temperatures. 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| title | Doping-Induced Universal Conductance Fluctuations in GaN Nanowires |
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