Effects of annealing on the luminescent properties from defects formed in electron-irradiated GaN

The effects of annealing on the luminescence properties of electron-irradiated GaN were investigated by photoluminescence (PL), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Our results indicate that the yellow luminescence (YL) remains disappear after all annealing...

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Veröffentlicht in:	Radiation measurements 2012-10, Vol.47 (10), p.965-969
Hauptverfasser:	Liang, L.M., Xie, X.J., Hao, Q.Y., Tian, Y., Liu, C.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Defect annealing Defects Earth sciences Earth, ocean, space Electron irradiation Exact sciences and technology Gallium nitrides GaN Geochronology Isotope geochemistry. Geochronology Luminescence Migration Photoluminescence Scanning electron microscopy Vacancies X-ray photoelectron spectroscopy Yellow luminescence
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