A 130 nm radiation hardened flip-flop with an annular gate and a C-element

This paper presents a radiation hardened flip-flop with an annular gate and a Muller C-element. The proposed cell has multiple working modes which can be used in different situations. Each part of the cell can be verified easily and completely by using different modes. This cell has been designed un...

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Veröffentlicht in:Journal of semiconductors 2014, Vol.35 (1), p.135-139
1. Verfasser: 王雷 蒋见花 向一鸣 周玉梅
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Sprache:eng
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