P-type double gate junctionless tunnel field effect transistor
We have investigated the 20 nm p-type double gate junctionless tunnel field effect transistor （P-DGJLTFET） and the impact of variation of different device parameters on the performance parameters of the P-DGJLTFET is discussed. We achieved excellent results of different performance parameters by tak...
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| Veröffentlicht in: | Journal of semiconductors 2014, Vol.35 (1), p.27-33 |
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| container_title | Journal of semiconductors |
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| creator | Akram, M. W. Ghosh, Bahniman Bal, Punyasloka Mondal, Partha |
| description | We have investigated the 20 nm p-type double gate junctionless tunnel field effect transistor （P-DGJLTFET） and the impact of variation of different device parameters on the performance parameters of the P-DGJLTFET is discussed. We achieved excellent results of different performance parameters by taking the optimized device parameters of the P-DGJLTFET. Together with a high-k dielectric material （TiO2） of 20 nm gate length, the simulation results of the P-DGJLTFET show excellent characteristics with a high IoN of ～ 0.3 mA/μm, a low/OFF of ～ 30 fA/μm, a high ION/IOFF ratio of ～ 1×10^10, a subthreshold slope （SS） point of ～ 23 mV/decade, and an average SS of ～ 49 mV/decade at a supply voltage of -1 V and at room temperature, which indicates that PDGJLTFET is a promising candidate for sub-22 nm technology nodes in the implementation of integrated circuits. |
| doi_str_mv | 10.1088/1674-4926/35/1/014002 |
| format | Article |
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W. ; Ghosh, Bahniman ; Bal, Punyasloka ; Mondal, Partha</creator><creatorcontrib>Akram, M. W. ; Ghosh, Bahniman ; Bal, Punyasloka ; Mondal, Partha</creatorcontrib><description>We have investigated the 20 nm p-type double gate junctionless tunnel field effect transistor （P-DGJLTFET） and the impact of variation of different device parameters on the performance parameters of the P-DGJLTFET is discussed. We achieved excellent results of different performance parameters by taking the optimized device parameters of the P-DGJLTFET. Together with a high-k dielectric material （TiO2） of 20 nm gate length, the simulation results of the P-DGJLTFET show excellent characteristics with a high IoN of ～ 0.3 mA/μm, a low/OFF of ～ 30 fA/μm, a high ION/IOFF ratio of ～ 1×10^10, a subthreshold slope （SS） point of ～ 23 mV/decade, and an average SS of ～ 49 mV/decade at a supply voltage of -1 V and at room temperature, which indicates that PDGJLTFET is a promising candidate for sub-22 nm technology nodes in the implementation of integrated circuits.</description><identifier>ISSN: 1674-4926</identifier><identifier>DOI: 10.1088/1674-4926/35/1/014002</identifier><language>eng</language><subject>Devices ; Field effect transistors ; Gates ; Semiconductor devices ; Semiconductors ; Titanium dioxide ; Tunnels (transportation) ; Voltage ; 二氧化钛 ; 参数变化 ; 双门 ; 场效应晶体管 ; 性能参数 ; 设备参数 ; 隧道</subject><ispartof>Journal of semiconductors, 2014, Vol.35 (1), p.27-33</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c312t-454c472f8b98b0d59b810abb14eb72caf79c080a5e2649b3c5cb14c863b8a633</citedby><cites>FETCH-LOGICAL-c312t-454c472f8b98b0d59b810abb14eb72caf79c080a5e2649b3c5cb14c863b8a633</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><link.rule.ids>314,777,781,4010,27904,27905,27906</link.rule.ids></links><search><creatorcontrib>Akram, M. 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Together with a high-k dielectric material （TiO2） of 20 nm gate length, the simulation results of the P-DGJLTFET show excellent characteristics with a high IoN of ～ 0.3 mA/μm, a low/OFF of ～ 30 fA/μm, a high ION/IOFF ratio of ～ 1×10^10, a subthreshold slope （SS） point of ～ 23 mV/decade, and an average SS of ～ 49 mV/decade at a supply voltage of -1 V and at room temperature, which indicates that PDGJLTFET is a promising candidate for sub-22 nm technology nodes in the implementation of integrated circuits.</description><subject>Devices</subject><subject>Field effect transistors</subject><subject>Gates</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Titanium dioxide</subject><subject>Tunnels (transportation)</subject><subject>Voltage</subject><subject>二氧化钛</subject><subject>参数变化</subject><subject>双门</subject><subject>场效应晶体管</subject><subject>性能参数</subject><subject>设备参数</subject><subject>隧道</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo9kE1rAyEQhj200PTjJxTsrZft6qqrXgol9AsC7SF3UTOmGzZuou4h_74bEnIaZuZ9BuZB6JGSF0qUqmkrecV109ZM1LQmlBPSXKHZZX6DbnPeEDL1nM7Q629VDjvAq2F0PeC1LYA3Y_SlG2IPOeMyxgg9Dh30KwwhgC-4JBtzl8uQ7tF1sH2Gh3O9Q8uP9-X8q1r8fH7P3xaVZ7QpFRfcc9kE5bRyZCW0U5RY5ygHJxtvg9SeKGIFNC3Xjnnhp51XLXPKtozdoefT2V0a9iPkYrZd9tD3NsIwZkOnZ1qttORTVJyiPg05Jwhml7qtTQdDiTkqMkcV5qjCMGGoOSmauKcz9zfE9b6L6wvIlZCKSM3-ActOZuI</recordid><startdate>2014</startdate><enddate>2014</enddate><creator>Akram, M. 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W. ; Ghosh, Bahniman ; Bal, Punyasloka ; Mondal, Partha</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c312t-454c472f8b98b0d59b810abb14eb72caf79c080a5e2649b3c5cb14c863b8a633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Devices</topic><topic>Field effect transistors</topic><topic>Gates</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>Titanium dioxide</topic><topic>Tunnels (transportation)</topic><topic>Voltage</topic><topic>二氧化钛</topic><topic>参数变化</topic><topic>双门</topic><topic>场效应晶体管</topic><topic>性能参数</topic><topic>设备参数</topic><topic>隧道</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Akram, M. W.</creatorcontrib><creatorcontrib>Ghosh, Bahniman</creatorcontrib><creatorcontrib>Bal, Punyasloka</creatorcontrib><creatorcontrib>Mondal, Partha</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of semiconductors</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Akram, M. 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Together with a high-k dielectric material （TiO2） of 20 nm gate length, the simulation results of the P-DGJLTFET show excellent characteristics with a high IoN of ～ 0.3 mA/μm, a low/OFF of ～ 30 fA/μm, a high ION/IOFF ratio of ～ 1×10^10, a subthreshold slope （SS） point of ～ 23 mV/decade, and an average SS of ～ 49 mV/decade at a supply voltage of -1 V and at room temperature, which indicates that PDGJLTFET is a promising candidate for sub-22 nm technology nodes in the implementation of integrated circuits.</abstract><doi>10.1088/1674-4926/35/1/014002</doi><tpages>7</tpages></addata></record> |
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| source | IOP Publishing Journals; Alma/SFX Local Collection |
| subjects | Devices Field effect transistors Gates Semiconductor devices Semiconductors Titanium dioxide Tunnels (transportation) Voltage 二氧化钛 参数变化 双门 场效应晶体管 性能参数 设备参数 隧道 |
| title | P-type double gate junctionless tunnel field effect transistor |
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