Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys

InAlN has been studied by means of temperature-dependent time-integrated photoluminescence and time-resolved photoluminescence. The variation of PL peak energy did not follow the behavior predicted by Varshni formula, and a faster redshift with increasing temperature was observed. We used a model th...

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Veröffentlicht in:	Journal of semiconductors 2014-09, Vol.35 (9), p.93001-1-093001-5
Hauptverfasser:	Li, Wei, Jin, Peng, Wang, Weiying, Mao, Defeng, Liu, Guipeng, Wang, Zhanguo, Wang, Jiaming, Xu, Fujun, Shen, Bo
Format:	Artikel
Sprache:	eng
Schlagworte:	Activation Alloys Excitons Mathematical models Photoluminescence Red shift Semiconductors Temperature dependence
Online-Zugang:	Volltext
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