Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys
InAlN has been studied by means of temperature-dependent time-integrated photoluminescence and time-resolved photoluminescence. The variation of PL peak energy did not follow the behavior predicted by Varshni formula, and a faster redshift with increasing temperature was observed. We used a model th...
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| Veröffentlicht in: | Journal of semiconductors 2014-09, Vol.35 (9), p.93001-1-093001-5 |
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| container_end_page | 1-093001-5 |
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| container_issue | 9 |
| container_start_page | 93001 |
| container_title | Journal of semiconductors |
| container_volume | 35 |
| creator | Li, Wei Jin, Peng Wang, Weiying Mao, Defeng Liu, Guipeng Wang, Zhanguo Wang, Jiaming Xu, Fujun Shen, Bo |
| description | InAlN has been studied by means of temperature-dependent time-integrated photoluminescence and time-resolved photoluminescence. The variation of PL peak energy did not follow the behavior predicted by Varshni formula, and a faster redshift with increasing temperature was observed. We used a model that took account of the thermal activation and thermal transfer of localized excitons to describe and explain the observed behavior. A good fitting to the experiment result is obtained. We believe the anomalous temperature dependence of PL peak energy shift can be attributed to the temperature-dependent redistribution of localized excitons induced by thermal activation and thermal transfer in the strongly localized states. V-shaped defects are thought to be a major factor causing the strong localized states in our In sub(0.153)Al sub(0.847)N sample. |
| doi_str_mv | 10.1088/1674-4926/35/9/093001 |
| format | Article |
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The variation of PL peak energy did not follow the behavior predicted by Varshni formula, and a faster redshift with increasing temperature was observed. We used a model that took account of the thermal activation and thermal transfer of localized excitons to describe and explain the observed behavior. A good fitting to the experiment result is obtained. We believe the anomalous temperature dependence of PL peak energy shift can be attributed to the temperature-dependent redistribution of localized excitons induced by thermal activation and thermal transfer in the strongly localized states. V-shaped defects are thought to be a major factor causing the strong localized states in our In sub(0.153)Al sub(0.847)N sample.</description><identifier>ISSN: 1674-4926</identifier><identifier>DOI: 10.1088/1674-4926/35/9/093001</identifier><language>eng</language><subject>Activation ; Alloys ; Excitons ; Mathematical models ; Photoluminescence ; Red shift ; Semiconductors ; Temperature dependence</subject><ispartof>Journal of semiconductors, 2014-09, Vol.35 (9), p.93001-1-093001-5</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c234t-c9ad4d44b40758765ab047ba220506db5dcceb1b0fe3f73140c3c30d75f65733</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Li, Wei</creatorcontrib><creatorcontrib>Jin, Peng</creatorcontrib><creatorcontrib>Wang, Weiying</creatorcontrib><creatorcontrib>Mao, Defeng</creatorcontrib><creatorcontrib>Liu, Guipeng</creatorcontrib><creatorcontrib>Wang, Zhanguo</creatorcontrib><creatorcontrib>Wang, Jiaming</creatorcontrib><creatorcontrib>Xu, Fujun</creatorcontrib><creatorcontrib>Shen, Bo</creatorcontrib><title>Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys</title><title>Journal of semiconductors</title><description>InAlN has been studied by means of temperature-dependent time-integrated photoluminescence and time-resolved photoluminescence. The variation of PL peak energy did not follow the behavior predicted by Varshni formula, and a faster redshift with increasing temperature was observed. We used a model that took account of the thermal activation and thermal transfer of localized excitons to describe and explain the observed behavior. A good fitting to the experiment result is obtained. We believe the anomalous temperature dependence of PL peak energy shift can be attributed to the temperature-dependent redistribution of localized excitons induced by thermal activation and thermal transfer in the strongly localized states. V-shaped defects are thought to be a major factor causing the strong localized states in our In sub(0.153)Al sub(0.847)N sample.</description><subject>Activation</subject><subject>Alloys</subject><subject>Excitons</subject><subject>Mathematical models</subject><subject>Photoluminescence</subject><subject>Red shift</subject><subject>Semiconductors</subject><subject>Temperature dependence</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo9kEtPwzAQhH0AiVL4CUg-cglZx6_kWFU8KhW49G45zgYCjhPs5NB_T6oiTqtZjUYzHyF3DB4YlGXOlBaZqAqVc5lXOVQcgF2Q1f__ilyn9AWwaMFW5HUTht76YU50wn7EaKc5YtbgiKHBMNHxc5gGP_ddwOQwOKQj2m-KAePHkXaB7sLGv1Hr_XBMN-SytT7h7d9dk8PT42H7ku3fn3fbzT5zBRdT5irbiEaIWoCWpVbS1iB0bYsCJKimlo1zWLMaWuSt5kyA445Do2WrpOZ8Te7PsWMcfmZMk-m7pZz3NuCyxLBlmyqFAr1Y5dnq4pBSxNaMsettPBoG5kTMnMiYExnDpanMmRj_BSuiYZs</recordid><startdate>201409</startdate><enddate>201409</enddate><creator>Li, Wei</creator><creator>Jin, Peng</creator><creator>Wang, Weiying</creator><creator>Mao, Defeng</creator><creator>Liu, Guipeng</creator><creator>Wang, Zhanguo</creator><creator>Wang, Jiaming</creator><creator>Xu, Fujun</creator><creator>Shen, Bo</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201409</creationdate><title>Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys</title><author>Li, Wei ; Jin, Peng ; Wang, Weiying ; Mao, Defeng ; Liu, Guipeng ; Wang, Zhanguo ; Wang, Jiaming ; Xu, Fujun ; Shen, Bo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c234t-c9ad4d44b40758765ab047ba220506db5dcceb1b0fe3f73140c3c30d75f65733</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Activation</topic><topic>Alloys</topic><topic>Excitons</topic><topic>Mathematical models</topic><topic>Photoluminescence</topic><topic>Red shift</topic><topic>Semiconductors</topic><topic>Temperature dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Wei</creatorcontrib><creatorcontrib>Jin, Peng</creatorcontrib><creatorcontrib>Wang, Weiying</creatorcontrib><creatorcontrib>Mao, Defeng</creatorcontrib><creatorcontrib>Liu, Guipeng</creatorcontrib><creatorcontrib>Wang, Zhanguo</creatorcontrib><creatorcontrib>Wang, Jiaming</creatorcontrib><creatorcontrib>Xu, Fujun</creatorcontrib><creatorcontrib>Shen, Bo</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of semiconductors</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Wei</au><au>Jin, Peng</au><au>Wang, Weiying</au><au>Mao, Defeng</au><au>Liu, Guipeng</au><au>Wang, Zhanguo</au><au>Wang, Jiaming</au><au>Xu, Fujun</au><au>Shen, Bo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys</atitle><jtitle>Journal of semiconductors</jtitle><date>2014-09</date><risdate>2014</risdate><volume>35</volume><issue>9</issue><spage>93001</spage><epage>1-093001-5</epage><pages>93001-1-093001-5</pages><issn>1674-4926</issn><abstract>InAlN has been studied by means of temperature-dependent time-integrated photoluminescence and time-resolved photoluminescence. The variation of PL peak energy did not follow the behavior predicted by Varshni formula, and a faster redshift with increasing temperature was observed. We used a model that took account of the thermal activation and thermal transfer of localized excitons to describe and explain the observed behavior. A good fitting to the experiment result is obtained. We believe the anomalous temperature dependence of PL peak energy shift can be attributed to the temperature-dependent redistribution of localized excitons induced by thermal activation and thermal transfer in the strongly localized states. V-shaped defects are thought to be a major factor causing the strong localized states in our In sub(0.153)Al sub(0.847)N sample.</abstract><doi>10.1088/1674-4926/35/9/093001</doi></addata></record> |
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| source | Institute of Physics Journals; Alma/SFX Local Collection |
| subjects | Activation Alloys Excitons Mathematical models Photoluminescence Red shift Semiconductors Temperature dependence |
| title | Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys |
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