AlN thin film growth using electron cyclotron resonance reactive sputtering
In this report, we investigated conditions to deposit stoichiometric aluminium nitride (AlN) thin films grown on (100)-oriented Si substrates under various Ar/N2 gas flow rates at a wide range of temperature from room temperature (RT) to 350°C using electron cyclotron resonance (ECR) reactive sputte...
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| Veröffentlicht in: | Journal of physics. Conference series 2014-01, Vol.557 (1), p.12047-5 |
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| creator | Hung, N H Oguchi, H Kuwano, H |
| description | In this report, we investigated conditions to deposit stoichiometric aluminium nitride (AlN) thin films grown on (100)-oriented Si substrates under various Ar/N2 gas flow rates at a wide range of temperature from room temperature (RT) to 350°C using electron cyclotron resonance (ECR) reactive sputtering. This study revealed that stoichiometric of thin film can be controlled by N2/Ar flow rate and that stoichiometric N/Al 1 was archived at N2/Ar 2. This study also revealed that crystallinity can be controlled by substrate temperature. From RT to 200°C, thin films were amorphous or poly-crystal, at 350°C however, thin film was mainly [110] and [100] AlN. Obtained thin films are densely packed and have very low root mean square (RMS) roughness of 0.41 nm which is much less than other sputtering methods. |
| doi_str_mv | 10.1088/1742-6596/557/1/012047 |
| format | Article |
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This study revealed that stoichiometric of thin film can be controlled by N2/Ar flow rate and that stoichiometric N/Al 1 was archived at N2/Ar 2. This study also revealed that crystallinity can be controlled by substrate temperature. From RT to 200°C, thin films were amorphous or poly-crystal, at 350°C however, thin film was mainly [110] and [100] AlN. 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Obtained thin films are densely packed and have very low root mean square (RMS) roughness of 0.41 nm which is much less than other sputtering methods.</description><subject>Aluminium nitride</subject><subject>Aluminum</subject><subject>Aluminum nitride</subject><subject>Crystallinity</subject><subject>Cyclotron resonance</subject><subject>Electron cyclotron resonance</subject><subject>Film growth</subject><subject>Flow velocity</subject><subject>Gas flow</subject><subject>Physics</subject><subject>Room temperature</subject><subject>Silicon substrates</subject><subject>Sputtering</subject><subject>Thin films</subject><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNpdkMtOwzAQRS0EEqXwCygSGzYh47ezrCpeooJN95Zj3DZVGhfbAfXvcShiwWzmSnNmdOcidI3hDoNSFZaMlILXouJcVrgCTIDJEzT5G5z-aaXO0UWMWwCaS07Qy6x7LdKm7YtV2-2KdfBfaVMMse3XheucTcH3hT3Yzv-o4KLvTW9dVsam9tMVcT-k5EJeuERnK9NFd_Xbp2j5cL-cP5WLt8fn-WxRWipYKhvXCMIJ5bImHGqmsKzxijSgOMuemoaDk9Qw894oEEwCpg0TShoMVEJNp-j2eHYf_MfgYtK7NlrXdaZ3fog6v5pxDCAzevMP3foh9NmcJlwKKYHgkRJHygYfY3ArvQ_tzoSDxqDHiMeTRI9J6hyxxvoYMf0G4a5tBw</recordid><startdate>20140101</startdate><enddate>20140101</enddate><creator>Hung, N H</creator><creator>Oguchi, H</creator><creator>Kuwano, H</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7QF</scope><scope>7U5</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>20140101</creationdate><title>AlN thin film growth using electron cyclotron resonance reactive sputtering</title><author>Hung, N H ; Oguchi, H ; Kuwano, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-beb625235792509481791f2b0854337bb50e73a4adb80647013b4687a1037093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Aluminium nitride</topic><topic>Aluminum</topic><topic>Aluminum nitride</topic><topic>Crystallinity</topic><topic>Cyclotron resonance</topic><topic>Electron cyclotron resonance</topic><topic>Film growth</topic><topic>Flow velocity</topic><topic>Gas flow</topic><topic>Physics</topic><topic>Room temperature</topic><topic>Silicon substrates</topic><topic>Sputtering</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hung, N H</creatorcontrib><creatorcontrib>Oguchi, H</creatorcontrib><creatorcontrib>Kuwano, H</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Aluminium Industry Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>Journal of physics. 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| subjects | Aluminium nitride Aluminum Aluminum nitride Crystallinity Cyclotron resonance Electron cyclotron resonance Film growth Flow velocity Gas flow Physics Room temperature Silicon substrates Sputtering Thin films |
| title | AlN thin film growth using electron cyclotron resonance reactive sputtering |
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