Growth of amorphous Zn–Sn–O thin films by RF sputtering for buffer layers of CuInSe2 and SnS solar cells

We propose using amorphous Zn–Sn–O (α-ZTO) deposited by RF sputtering as an alternative n-type buffer layer for Cu(In,Ga)Se2 and SnS solar cells. The order of the carrier density, n, is increased from the order of 1015 to 1017cm−1 as the Sn/(Sn+Zn) atomic ratio increases from 0.29 to 0.40. On the ot...

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Veröffentlicht in:	Thin solid films 2015-08, Vol.589, p.408-411
Hauptverfasser:	Chang, Shao-Wei, Ishikawa, Kaoru, Sugiyama, Mutsumi
Format:	Artikel
Sprache:	eng
Schlagworte:	AMORPHOUS STRUCTURE COPPER INDIUM SELENIDE Discontinuity Partial pressure Photovoltaic cells PRESSURE Solar cells SPUTTERING THIN FILMS Tin Tin sulfide Transparent conducting oxide VALENCE Zinc Zinc tin oxide
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