All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2/Graphene Heterostructures

All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2/Graphene Heterostructures

A facile all‐chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2/Gr vertical heterostructures on Au foils. A weak n‐doping effect and an intrinsic bandgap of MoS2 are obta...

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Veröffentlicht in:Advanced materials (Weinheim) 2015-11, Vol.27 (44), p.7086-7092
Hauptverfasser: Shi, Jianping, Liu, Mengxi, Wen, Jinxiu, Ren, Xibiao, Zhou, Xiebo, Ji, Qingqing, Ma, Donglin, Zhang, Yu, Jin, Chuanhong, Chen, Huanjun, Deng, Shaozhi, Xu, Ningsheng, Liu, Zhongfan, Zhang, Yanfeng
Format: Artikel
Sprache:eng
Schlagworte:
Chemistry Techniques, Synthetic
Disulfides - chemistry
exciton binding energies
Gold - chemistry
graphene heterostructures
Graphite - chemistry
intrinsic bandgaps
Models, Molecular
Molecular Conformation
Molybdenum - chemistry
quasi-freestanding MoS2
scanning tunneling microscopy
Temperature
Volatilization
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Zusammenfassung:A facile all‐chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2/Gr vertical heterostructures on Au foils. A weak n‐doping effect and an intrinsic bandgap of MoS2 are obtained from MoS2/Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201503342