A Ka-band wide locking range frequency divider with high injection sensitivity
This paper proposes a direct injection-locked frequency divider（ILFD） with a wide locking range in the Ka-band. A complementary cross-coupled architecture is used to enhance the overdriving voltage of the switch transistor so that the divider locking range is extended efficiently. New insights into...
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| Veröffentlicht in: | Journal of semiconductors 2014-03, Vol.35 (3), p.109-115 |
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| container_end_page | 115 |
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| container_issue | 3 |
| container_start_page | 109 |
| container_title | Journal of semiconductors |
| container_volume | 35 |
| creator | 刘法恩 王志功 李智群 李芹 唐路 杨格亮 李竹 |
| description | This paper proposes a direct injection-locked frequency divider（ILFD） with a wide locking range in the Ka-band. A complementary cross-coupled architecture is used to enhance the overdriving voltage of the switch transistor so that the divider locking range is extended efficiently. New insights into the locking range and output power are proposed. A new method to analyze and optimize the injection sensitivity is presented and a layout technique to reduce the parasitics of the cross-coupled transistors is applied to decrease the frequency shift and the locking range degradation. The circuit is designed in a standard 90-nm CMOS process. The total locking range of the ILFD is 43.8% at 34.5 GHz with an incident power of –3.5 dBm. The divider IC consumes 3.6 mW of power at the supply voltage of 1.2 V. The chip area including the pads is 0.50.5 mm2. |
| doi_str_mv | 10.1088/1674-4926/35/3/035002 |
| format | Article |
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A complementary cross-coupled architecture is used to enhance the overdriving voltage of the switch transistor so that the divider locking range is extended efficiently. New insights into the locking range and output power are proposed. A new method to analyze and optimize the injection sensitivity is presented and a layout technique to reduce the parasitics of the cross-coupled transistors is applied to decrease the frequency shift and the locking range degradation. The circuit is designed in a standard 90-nm CMOS process. The total locking range of the ILFD is 43.8% at 34.5 GHz with an incident power of –3.5 dBm. The divider IC consumes 3.6 mW of power at the supply voltage of 1.2 V. The chip area including the pads is 0.50.5 mm2.</description><identifier>ISSN: 1674-4926</identifier><identifier>DOI: 10.1088/1674-4926/35/3/035002</identifier><language>eng</language><subject>CMOS工艺 ; Dividers ; Electric potential ; Frequency dividers ; Ka波段 ; Locking ; Semiconductor devices ; Semiconductors ; Transistors ; Voltage ; 分频器 ; 器具 ; 开关晶体管 ; 注入锁定 ; 注射 ; 高灵敏度</subject><ispartof>Journal of semiconductors, 2014-03, Vol.35 (3), p.109-115</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c312t-348eade0ed9f4692ae157910d24121820f0a92f932cc9c7807c82e6b170007ff3</citedby><cites>FETCH-LOGICAL-c312t-348eade0ed9f4692ae157910d24121820f0a92f932cc9c7807c82e6b170007ff3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>刘法恩 王志功 李智群 李芹 唐路 杨格亮 李竹</creatorcontrib><title>A Ka-band wide locking range frequency divider with high injection sensitivity</title><title>Journal of semiconductors</title><addtitle>Chinese Journal of Semiconductors</addtitle><description>This paper proposes a direct injection-locked frequency divider（ILFD） with a wide locking range in the Ka-band. 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The chip area including the pads is 0.50.5 mm2.</description><subject>CMOS工艺</subject><subject>Dividers</subject><subject>Electric potential</subject><subject>Frequency dividers</subject><subject>Ka波段</subject><subject>Locking</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Transistors</subject><subject>Voltage</subject><subject>分频器</subject><subject>器具</subject><subject>开关晶体管</subject><subject>注入锁定</subject><subject>注射</subject><subject>高灵敏度</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo9kMtOwzAQRb0AiVL4BCSzYxMyfiSOl1XFS1SwgbXlOnbikjqtnYL696Rq1dVoZs4djQ5CdwQeCVRVTkrBMy5pmbMiZzmwAoBeoMl5foWuU1oBjD0nE_Qxw-86W-pQ4z9fW9z15seHBkcdGotdtNudDWaPa_87ruMIDS1ufdNiH1bWDL4PONmQ_DACw_4GXTrdJXt7qlP0_fz0NX_NFp8vb_PZIjOM0CFjvLK6tmBr6XgpqbakEJJATTmhpKLgQEvqJKPGSCMqEKaitlwSAQDCOTZFD8e7m9iPH6ZBrX0ytut0sP0uKSIYEBCCiREtjqiJfUrROrWJfq3jXhFQB2fq4EYd3ChWKKaOzsbc_SnX9qHZjlLOQS4J46Jg7B8av2v1</recordid><startdate>20140301</startdate><enddate>20140301</enddate><creator>刘法恩 王志功 李智群 李芹 唐路 杨格亮 李竹</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20140301</creationdate><title>A Ka-band wide locking range frequency divider with high injection sensitivity</title><author>刘法恩 王志功 李智群 李芹 唐路 杨格亮 李竹</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c312t-348eade0ed9f4692ae157910d24121820f0a92f932cc9c7807c82e6b170007ff3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>CMOS工艺</topic><topic>Dividers</topic><topic>Electric potential</topic><topic>Frequency dividers</topic><topic>Ka波段</topic><topic>Locking</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>Transistors</topic><topic>Voltage</topic><topic>分频器</topic><topic>器具</topic><topic>开关晶体管</topic><topic>注入锁定</topic><topic>注射</topic><topic>高灵敏度</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>刘法恩 王志功 李智群 李芹 唐路 杨格亮 李竹</creatorcontrib><collection>维普_期刊</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>维普中文期刊数据库</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of semiconductors</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>刘法恩 王志功 李智群 李芹 唐路 杨格亮 李竹</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Ka-band wide locking range frequency divider with high injection sensitivity</atitle><jtitle>Journal of semiconductors</jtitle><addtitle>Chinese Journal of Semiconductors</addtitle><date>2014-03-01</date><risdate>2014</risdate><volume>35</volume><issue>3</issue><spage>109</spage><epage>115</epage><pages>109-115</pages><issn>1674-4926</issn><abstract>This paper proposes a direct injection-locked frequency divider（ILFD） with a wide locking range in the Ka-band. 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| identifier | ISSN: 1674-4926 |
| ispartof | Journal of semiconductors, 2014-03, Vol.35 (3), p.109-115 |
| issn | 1674-4926 |
| language | eng |
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| source | Institute of Physics Journals; Alma/SFX Local Collection |
| subjects | CMOS工艺 Dividers Electric potential Frequency dividers Ka波段 Locking Semiconductor devices Semiconductors Transistors Voltage 分频器 器具 开关晶体管 注入锁定 注射 高灵敏度 |
| title | A Ka-band wide locking range frequency divider with high injection sensitivity |
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