A dual redundancy radiation-hardened flip-flop based on a C-element in a 65 nm process

A radiation-hardened flip-flop is proposed to mitigate the single event upset （SEU） effect. Immunity was achieved through the use of C-elements and redundant storage elements. It takes advantage of the property of a C-element in which it enters a high impedance mode when its inputs are of different...

Ausführliche Beschreibung