Structural, electrical and luminescent properties of ZnO:Li films fabricated by screen-printing method on sapphire substrate
Undoped and Li‐doped ZnO thick films were fabricated by a screen‐printing technique on sapphire substrate. The effect of sintering temperature (TS = 800, 900 and 1000 °C) and Li content ([Li] = 0.003, 0.03 and 0.3 wt%) on the photoluminescence (PL), electrical and structural properties of the films...
Gespeichert in:
| Veröffentlicht in: | Physica status solidi. C 2015-08, Vol.12 (8), p.1144-1147 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1147 |
|---|---|
| container_issue | 8 |
| container_start_page | 1144 |
| container_title | Physica status solidi. C |
| container_volume | 12 |
| creator | Khomenkova, L. Kushnirenko, V. I. Osipyonok, M. M. Syngaivsky, O. F. Zashivailo, T. V. Pekar, G. S. Polishchuk, Yu. O. Kladko, V. P. Borkovska, L. V. |
| description | Undoped and Li‐doped ZnO thick films were fabricated by a screen‐printing technique on sapphire substrate. The effect of sintering temperature (TS = 800, 900 and 1000 °C) and Li content ([Li] = 0.003, 0.03 and 0.3 wt%) on the photoluminescence (PL), electrical and structural properties of the films was investigated. The X‐ray diffraction shows that all the films are polycrystalline with a wurtzite structure. It is found that both high sintering temperature and low Li content favour formation of the low‐resistive films with an enhanced UV emission. The high Li content stimulates an appearance of semi‐insulating behaviour of the films and deteriorated PL properties. It is shown that the effect of Li‐doping on light‐emitting properties of the films consists mainly in the modification of the film crystallinity and the engineering of the concentration of intrinsic defects. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.201400232 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1730087990</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1730087990</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4582-b6e0be12db78ba29d06cd7201fc14943bcd62c1965d937d98bcc61862aa48f43</originalsourceid><addsrcrecordid>eNqFkU1rFTEUhgdRsFa3rgNuXDjXfE1mxp3calu4WMstCG5CPs7Y1ExmmmTQC_54M1wp4sbVyYH3OeThraqXBG8IxvTtnJLZUEx4WRh9VJ0QQXBNBKePy7sTtBasIU-rZyndYcwaTMRJ9Wuf42LyEpV_g8CDydEZ5ZEKFvlldAGSgZDRHKcZYnaQ0DSgr-Hq3c6hwfkxoUHplclgkT6gZCJAqOfoQnbhGxoh304WTQElNc-3LgJKi045FuB59WRQPsGLP_O0uvn44WZ7Ue-uzi-373e14U1Hay0AayDU6rbTivYWC2PbYjoYwnvOtLGCGtKLxvastX2njRGrsFK8Gzg7rV4fzxaJ-wVSlqMrVt6rANOSJGkZxl3b97hEX_0TvZuWGMrnSgo3nHLerQc3x5SJU0oRBll0RxUPkmC5diHXLuRDFwXoj8AP5-Hwn7T8vN9v_2brI-tShp8PrIrfpWhZ28gvn87l_qy5ZvS6l2fsN9x3nso</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1705424484</pqid></control><display><type>article</type><title>Structural, electrical and luminescent properties of ZnO:Li films fabricated by screen-printing method on sapphire substrate</title><source>Access via Wiley Online Library</source><creator>Khomenkova, L. ; Kushnirenko, V. I. ; Osipyonok, M. M. ; Syngaivsky, O. F. ; Zashivailo, T. V. ; Pekar, G. S. ; Polishchuk, Yu. O. ; Kladko, V. P. ; Borkovska, L. V.</creator><creatorcontrib>Khomenkova, L. ; Kushnirenko, V. I. ; Osipyonok, M. M. ; Syngaivsky, O. F. ; Zashivailo, T. V. ; Pekar, G. S. ; Polishchuk, Yu. O. ; Kladko, V. P. ; Borkovska, L. V.</creatorcontrib><description>Undoped and Li‐doped ZnO thick films were fabricated by a screen‐printing technique on sapphire substrate. The effect of sintering temperature (TS = 800, 900 and 1000 °C) and Li content ([Li] = 0.003, 0.03 and 0.3 wt%) on the photoluminescence (PL), electrical and structural properties of the films was investigated. The X‐ray diffraction shows that all the films are polycrystalline with a wurtzite structure. It is found that both high sintering temperature and low Li content favour formation of the low‐resistive films with an enhanced UV emission. The high Li content stimulates an appearance of semi‐insulating behaviour of the films and deteriorated PL properties. It is shown that the effect of Li‐doping on light‐emitting properties of the films consists mainly in the modification of the film crystallinity and the engineering of the concentration of intrinsic defects. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201400232</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Crystal defects ; defects ; Diffraction ; Li doping ; Lithium ; photoluminescence ; Sapphire ; screen-printed films ; Sintering ; Solid state physics ; Thick films ; Wurtzite ; XRD ; zinc oxide</subject><ispartof>Physica status solidi. C, 2015-08, Vol.12 (8), p.1144-1147</ispartof><rights>Copyright © 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>Copyright © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4582-b6e0be12db78ba29d06cd7201fc14943bcd62c1965d937d98bcc61862aa48f43</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssc.201400232$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssc.201400232$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Khomenkova, L.</creatorcontrib><creatorcontrib>Kushnirenko, V. I.</creatorcontrib><creatorcontrib>Osipyonok, M. M.</creatorcontrib><creatorcontrib>Syngaivsky, O. F.</creatorcontrib><creatorcontrib>Zashivailo, T. V.</creatorcontrib><creatorcontrib>Pekar, G. S.</creatorcontrib><creatorcontrib>Polishchuk, Yu. O.</creatorcontrib><creatorcontrib>Kladko, V. P.</creatorcontrib><creatorcontrib>Borkovska, L. V.</creatorcontrib><title>Structural, electrical and luminescent properties of ZnO:Li films fabricated by screen-printing method on sapphire substrate</title><title>Physica status solidi. C</title><addtitle>Phys. Status Solidi C</addtitle><description>Undoped and Li‐doped ZnO thick films were fabricated by a screen‐printing technique on sapphire substrate. The effect of sintering temperature (TS = 800, 900 and 1000 °C) and Li content ([Li] = 0.003, 0.03 and 0.3 wt%) on the photoluminescence (PL), electrical and structural properties of the films was investigated. The X‐ray diffraction shows that all the films are polycrystalline with a wurtzite structure. It is found that both high sintering temperature and low Li content favour formation of the low‐resistive films with an enhanced UV emission. The high Li content stimulates an appearance of semi‐insulating behaviour of the films and deteriorated PL properties. It is shown that the effect of Li‐doping on light‐emitting properties of the films consists mainly in the modification of the film crystallinity and the engineering of the concentration of intrinsic defects. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>Crystal defects</subject><subject>defects</subject><subject>Diffraction</subject><subject>Li doping</subject><subject>Lithium</subject><subject>photoluminescence</subject><subject>Sapphire</subject><subject>screen-printed films</subject><subject>Sintering</subject><subject>Solid state physics</subject><subject>Thick films</subject><subject>Wurtzite</subject><subject>XRD</subject><subject>zinc oxide</subject><issn>1862-6351</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqFkU1rFTEUhgdRsFa3rgNuXDjXfE1mxp3calu4WMstCG5CPs7Y1ExmmmTQC_54M1wp4sbVyYH3OeThraqXBG8IxvTtnJLZUEx4WRh9VJ0QQXBNBKePy7sTtBasIU-rZyndYcwaTMRJ9Wuf42LyEpV_g8CDydEZ5ZEKFvlldAGSgZDRHKcZYnaQ0DSgr-Hq3c6hwfkxoUHplclgkT6gZCJAqOfoQnbhGxoh304WTQElNc-3LgJKi045FuB59WRQPsGLP_O0uvn44WZ7Ue-uzi-373e14U1Hay0AayDU6rbTivYWC2PbYjoYwnvOtLGCGtKLxvastX2njRGrsFK8Gzg7rV4fzxaJ-wVSlqMrVt6rANOSJGkZxl3b97hEX_0TvZuWGMrnSgo3nHLerQc3x5SJU0oRBll0RxUPkmC5diHXLuRDFwXoj8AP5-Hwn7T8vN9v_2brI-tShp8PrIrfpWhZ28gvn87l_qy5ZvS6l2fsN9x3nso</recordid><startdate>201508</startdate><enddate>201508</enddate><creator>Khomenkova, L.</creator><creator>Kushnirenko, V. I.</creator><creator>Osipyonok, M. M.</creator><creator>Syngaivsky, O. F.</creator><creator>Zashivailo, T. V.</creator><creator>Pekar, G. S.</creator><creator>Polishchuk, Yu. O.</creator><creator>Kladko, V. P.</creator><creator>Borkovska, L. V.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7QF</scope><scope>JG9</scope></search><sort><creationdate>201508</creationdate><title>Structural, electrical and luminescent properties of ZnO:Li films fabricated by screen-printing method on sapphire substrate</title><author>Khomenkova, L. ; Kushnirenko, V. I. ; Osipyonok, M. M. ; Syngaivsky, O. F. ; Zashivailo, T. V. ; Pekar, G. S. ; Polishchuk, Yu. O. ; Kladko, V. P. ; Borkovska, L. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4582-b6e0be12db78ba29d06cd7201fc14943bcd62c1965d937d98bcc61862aa48f43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Crystal defects</topic><topic>defects</topic><topic>Diffraction</topic><topic>Li doping</topic><topic>Lithium</topic><topic>photoluminescence</topic><topic>Sapphire</topic><topic>screen-printed films</topic><topic>Sintering</topic><topic>Solid state physics</topic><topic>Thick films</topic><topic>Wurtzite</topic><topic>XRD</topic><topic>zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Khomenkova, L.</creatorcontrib><creatorcontrib>Kushnirenko, V. I.</creatorcontrib><creatorcontrib>Osipyonok, M. M.</creatorcontrib><creatorcontrib>Syngaivsky, O. F.</creatorcontrib><creatorcontrib>Zashivailo, T. V.</creatorcontrib><creatorcontrib>Pekar, G. S.</creatorcontrib><creatorcontrib>Polishchuk, Yu. O.</creatorcontrib><creatorcontrib>Kladko, V. P.</creatorcontrib><creatorcontrib>Borkovska, L. V.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Materials Research Database</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Khomenkova, L.</au><au>Kushnirenko, V. I.</au><au>Osipyonok, M. M.</au><au>Syngaivsky, O. F.</au><au>Zashivailo, T. V.</au><au>Pekar, G. S.</au><au>Polishchuk, Yu. O.</au><au>Kladko, V. P.</au><au>Borkovska, L. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural, electrical and luminescent properties of ZnO:Li films fabricated by screen-printing method on sapphire substrate</atitle><jtitle>Physica status solidi. C</jtitle><addtitle>Phys. Status Solidi C</addtitle><date>2015-08</date><risdate>2015</risdate><volume>12</volume><issue>8</issue><spage>1144</spage><epage>1147</epage><pages>1144-1147</pages><issn>1862-6351</issn><eissn>1610-1642</eissn><abstract>Undoped and Li‐doped ZnO thick films were fabricated by a screen‐printing technique on sapphire substrate. The effect of sintering temperature (TS = 800, 900 and 1000 °C) and Li content ([Li] = 0.003, 0.03 and 0.3 wt%) on the photoluminescence (PL), electrical and structural properties of the films was investigated. The X‐ray diffraction shows that all the films are polycrystalline with a wurtzite structure. It is found that both high sintering temperature and low Li content favour formation of the low‐resistive films with an enhanced UV emission. The high Li content stimulates an appearance of semi‐insulating behaviour of the films and deteriorated PL properties. It is shown that the effect of Li‐doping on light‐emitting properties of the films consists mainly in the modification of the film crystallinity and the engineering of the concentration of intrinsic defects. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.201400232</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1862-6351 |
| ispartof | Physica status solidi. C, 2015-08, Vol.12 (8), p.1144-1147 |
| issn | 1862-6351 1610-1642 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1730087990 |
| source | Access via Wiley Online Library |
| subjects | Crystal defects defects Diffraction Li doping Lithium photoluminescence Sapphire screen-printed films Sintering Solid state physics Thick films Wurtzite XRD zinc oxide |
| title | Structural, electrical and luminescent properties of ZnO:Li films fabricated by screen-printing method on sapphire substrate |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T20%3A34%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Structural,%20electrical%20and%20luminescent%20properties%20of%20ZnO:Li%20films%20fabricated%20by%20screen-printing%20method%20on%20sapphire%20substrate&rft.jtitle=Physica%20status%20solidi.%20C&rft.au=Khomenkova,%20L.&rft.date=2015-08&rft.volume=12&rft.issue=8&rft.spage=1144&rft.epage=1147&rft.pages=1144-1147&rft.issn=1862-6351&rft.eissn=1610-1642&rft_id=info:doi/10.1002/pssc.201400232&rft_dat=%3Cproquest_cross%3E1730087990%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1705424484&rft_id=info:pmid/&rfr_iscdi=true |