Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100)

•The shape and morphology of GaSb islands were studied under various conditions.•The atomic step type affected the shape and morphology of the GaSb islands.•The reconstructed surface type affects the density and size of the islands. The effects of the Ga-induced reconstructed surface and atomic step...

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Veröffentlicht in:	Applied surface science 2015-10, Vol.351, p.686-692
Hauptverfasser:	Machida, Ryuto, Toda, Ryusuke, Fujikawa, Sachie, Hara, Shinsuke, Watanabe, Issei, Fujishiro, Hiroki I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Antimony Atomic force microscopy Density Diffusion Gallium antimonide III–V compound semiconductor Islands Morphology Nanostructures Scanning tunneling microscopy Silicon Silicon substrates
Online-Zugang:	Volltext
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