Optical properties and thermionic emission in solar cells with InAs quantum dots embedded within GaNAs and GaInNAs
[Display omitted] The optical properties of p-i-n solar cells comprised of InAs quantum dots embedded within GaNAs and GaInNAs quantum wells are reported. Strain compensating and mediating GaNAs and GaInNAs layers shift the photoluminescence emission as well as absorption edge of the quantum dots to...
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| Veröffentlicht in: | Scripta materialia 2015-11, Vol.108, p.122-125 |
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| container_title | Scripta materialia |
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| creator | Polojärvi, Ville Pavelescu, Emil-Mihai Schramm, Andreas Tukiainen, Antti Aho, Arto Puustinen, Janne Guina, Mircea |
| description | [Display omitted]
The optical properties of p-i-n solar cells comprised of InAs quantum dots embedded within GaNAs and GaInNAs quantum wells are reported. Strain compensating and mediating GaNAs and GaInNAs layers shift the photoluminescence emission as well as absorption edge of the quantum dots to longer wavelengths. GaNAs and GaInNAs quantum wells contribute also to extending the absorption edge. In addition, the use of GaNAs and GaInNAs layers enhances the thermal escape of electrons from QDs by introducing steps for electrons to the GaAs conduction band. |
| doi_str_mv | 10.1016/j.scriptamat.2015.06.033 |
| format | Article |
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The optical properties of p-i-n solar cells comprised of InAs quantum dots embedded within GaNAs and GaInNAs quantum wells are reported. Strain compensating and mediating GaNAs and GaInNAs layers shift the photoluminescence emission as well as absorption edge of the quantum dots to longer wavelengths. GaNAs and GaInNAs quantum wells contribute also to extending the absorption edge. In addition, the use of GaNAs and GaInNAs layers enhances the thermal escape of electrons from QDs by introducing steps for electrons to the GaAs conduction band.</description><identifier>ISSN: 1359-6462</identifier><identifier>EISSN: 1872-8456</identifier><identifier>DOI: 10.1016/j.scriptamat.2015.06.033</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Emission ; Indium arsenides ; Optical properties ; Photovoltaic cells ; Quantum dot ; Quantum dots ; Quantum well ; Quantum wells ; Solar cell ; Solar cells ; Strain engineering ; Thermal escape ; Wavelengths</subject><ispartof>Scripta materialia, 2015-11, Vol.108, p.122-125</ispartof><rights>2015 Acta Materialia Inc.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c421t-8d0f829826ced6f30a6da7bcdd8a74ca4c05065e91402cc97f4fbeb2c8ce15a63</citedby><cites>FETCH-LOGICAL-c421t-8d0f829826ced6f30a6da7bcdd8a74ca4c05065e91402cc97f4fbeb2c8ce15a63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.scriptamat.2015.06.033$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Polojärvi, Ville</creatorcontrib><creatorcontrib>Pavelescu, Emil-Mihai</creatorcontrib><creatorcontrib>Schramm, Andreas</creatorcontrib><creatorcontrib>Tukiainen, Antti</creatorcontrib><creatorcontrib>Aho, Arto</creatorcontrib><creatorcontrib>Puustinen, Janne</creatorcontrib><creatorcontrib>Guina, Mircea</creatorcontrib><title>Optical properties and thermionic emission in solar cells with InAs quantum dots embedded within GaNAs and GaInNAs</title><title>Scripta materialia</title><description>[Display omitted]
The optical properties of p-i-n solar cells comprised of InAs quantum dots embedded within GaNAs and GaInNAs quantum wells are reported. Strain compensating and mediating GaNAs and GaInNAs layers shift the photoluminescence emission as well as absorption edge of the quantum dots to longer wavelengths. GaNAs and GaInNAs quantum wells contribute also to extending the absorption edge. In addition, the use of GaNAs and GaInNAs layers enhances the thermal escape of electrons from QDs by introducing steps for electrons to the GaAs conduction band.</description><subject>Emission</subject><subject>Indium arsenides</subject><subject>Optical properties</subject><subject>Photovoltaic cells</subject><subject>Quantum dot</subject><subject>Quantum dots</subject><subject>Quantum well</subject><subject>Quantum wells</subject><subject>Solar cell</subject><subject>Solar cells</subject><subject>Strain engineering</subject><subject>Thermal escape</subject><subject>Wavelengths</subject><issn>1359-6462</issn><issn>1872-8456</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqFUMtOwzAQtBBIlMI_-MglYe0kTnIsFZRKFb3A2XLtjeoqr9ouiL_HJUgcOe1IOzOaGUIog5QBEw-H1Gtnx6A6FVIOrEhBpJBlF2TGqpInVV6Iy4izok5ELvg1ufH-AACCcTYjbjsGq1VLRzeM6IJFT1VvaNij6-zQW02xs95HSG1P_dAqRzW2raefNuzpul94ejypPpw6aobgI32HxqD5-UfJSr0uJs-VWvcR35KrRrUe737vnLw_P70tX5LNdrVeLjaJzjkLSWWgqXhdcaHRiCYDJYwqd9qYSpW5VrmGAkSBNcuBa12XTd7scMd1pZEVSmRzcj_5xmrHE_ogY5FzdNXjcPKSlRlAyes41pxUE1W7wXuHjRyd7ZT7kgzkeWZ5kH8zy_PMEoSMyih9nKQYq3xYdJFosY-ZrUMdpBns_ybfXySNyw</recordid><startdate>20151101</startdate><enddate>20151101</enddate><creator>Polojärvi, Ville</creator><creator>Pavelescu, Emil-Mihai</creator><creator>Schramm, Andreas</creator><creator>Tukiainen, Antti</creator><creator>Aho, Arto</creator><creator>Puustinen, Janne</creator><creator>Guina, Mircea</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20151101</creationdate><title>Optical properties and thermionic emission in solar cells with InAs quantum dots embedded within GaNAs and GaInNAs</title><author>Polojärvi, Ville ; Pavelescu, Emil-Mihai ; Schramm, Andreas ; Tukiainen, Antti ; Aho, Arto ; Puustinen, Janne ; Guina, Mircea</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c421t-8d0f829826ced6f30a6da7bcdd8a74ca4c05065e91402cc97f4fbeb2c8ce15a63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Emission</topic><topic>Indium arsenides</topic><topic>Optical properties</topic><topic>Photovoltaic cells</topic><topic>Quantum dot</topic><topic>Quantum dots</topic><topic>Quantum well</topic><topic>Quantum wells</topic><topic>Solar cell</topic><topic>Solar cells</topic><topic>Strain engineering</topic><topic>Thermal escape</topic><topic>Wavelengths</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Polojärvi, Ville</creatorcontrib><creatorcontrib>Pavelescu, Emil-Mihai</creatorcontrib><creatorcontrib>Schramm, Andreas</creatorcontrib><creatorcontrib>Tukiainen, Antti</creatorcontrib><creatorcontrib>Aho, Arto</creatorcontrib><creatorcontrib>Puustinen, Janne</creatorcontrib><creatorcontrib>Guina, Mircea</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Scripta materialia</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Polojärvi, Ville</au><au>Pavelescu, Emil-Mihai</au><au>Schramm, Andreas</au><au>Tukiainen, Antti</au><au>Aho, Arto</au><au>Puustinen, Janne</au><au>Guina, Mircea</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical properties and thermionic emission in solar cells with InAs quantum dots embedded within GaNAs and GaInNAs</atitle><jtitle>Scripta materialia</jtitle><date>2015-11-01</date><risdate>2015</risdate><volume>108</volume><spage>122</spage><epage>125</epage><pages>122-125</pages><issn>1359-6462</issn><eissn>1872-8456</eissn><abstract>[Display omitted]
The optical properties of p-i-n solar cells comprised of InAs quantum dots embedded within GaNAs and GaInNAs quantum wells are reported. Strain compensating and mediating GaNAs and GaInNAs layers shift the photoluminescence emission as well as absorption edge of the quantum dots to longer wavelengths. GaNAs and GaInNAs quantum wells contribute also to extending the absorption edge. In addition, the use of GaNAs and GaInNAs layers enhances the thermal escape of electrons from QDs by introducing steps for electrons to the GaAs conduction band.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.scriptamat.2015.06.033</doi><tpages>4</tpages></addata></record> |
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| ispartof | Scripta materialia, 2015-11, Vol.108, p.122-125 |
| issn | 1359-6462 1872-8456 |
| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Emission Indium arsenides Optical properties Photovoltaic cells Quantum dot Quantum dots Quantum well Quantum wells Solar cell Solar cells Strain engineering Thermal escape Wavelengths |
| title | Optical properties and thermionic emission in solar cells with InAs quantum dots embedded within GaNAs and GaInNAs |
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