Atom Probe Tomography of Electronic Materials

The state of application of atom probe tomography to electronic materials is assessed. The benefits and challenges of the technique are discussed with regard to its impact on this field of materials science. Specimen preparation in particular is emphasized as the key to success with modern atom prob...

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Veröffentlicht in:Annual review of materials research 2007-01, Vol.37 (1), p.681-727
Hauptverfasser: Kelly, Thomas F, Larson, David J, Thompson, Keith, Alvis, Roger L, Bunton, Joseph H, Olson, Jesse D, Gorman, Brian P
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container_end_page 727
container_issue 1
container_start_page 681
container_title Annual review of materials research
container_volume 37
creator Kelly, Thomas F
Larson, David J
Thompson, Keith
Alvis, Roger L
Bunton, Joseph H
Olson, Jesse D
Gorman, Brian P
description The state of application of atom probe tomography to electronic materials is assessed. The benefits and challenges of the technique are discussed with regard to its impact on this field of materials science. Specimen preparation in particular is emphasized as the key to success with modern atom probes. Electronic materials referenced in this paper include components of complementary metal/oxide/semiconductor (CMOS) structures, compound semiconductors, and thin films for data storage and general applications. Many examples from recent work are provided as illustrations of the types of information that can be derived and the impact this information can have on the research, development, processing, and failure analysis of electronic materials.
doi_str_mv 10.1146/annurev.matsci.37.052506.084239
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1730050438</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1082198493</sourcerecordid><originalsourceid>FETCH-LOGICAL-a466t-3118c1f3dbd59afd4c1c4995381729cbef62155c5e37a95950528d6dfb0446413</originalsourceid><addsrcrecordid>eNqFkD1PwzAURS0EEqXwH7LBkuCXZzvxhKqqfEhFMJTZchwbgpK42AlS_z2p0p3p3uHovatDyC3QDICJe933Y7C_WaeHaJoMi4zynFOR0ZLlKM_IAjjjKQMoz48dIS0Q4ZJcxfhNKQghxYKkq8F3yXvwlU12vvOfQe-_Dol3yaa1Zgi-b0zyqgcbGt3Ga3LhprA3p1ySj8fNbv2cbt-eXtarbaqZEEOK008DDuuq5lK7mhkwTEqOJRS5NJV1IgfODbdYaMkln5aXtahdRRkTDHBJ7ua7--B_RhsH1TXR2LbVvfVjVFAgpZwyLP9HaZmDLJnECX2YURN8jME6tQ9Np8NhgtTRqTo5VbNThYWanarZKf4BK_lt1A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1082198493</pqid></control><display><type>article</type><title>Atom Probe Tomography of Electronic Materials</title><source>Annual Reviews Complete A-Z List</source><creator>Kelly, Thomas F ; Larson, David J ; Thompson, Keith ; Alvis, Roger L ; Bunton, Joseph H ; Olson, Jesse D ; Gorman, Brian P</creator><creatorcontrib>Kelly, Thomas F ; Larson, David J ; Thompson, Keith ; Alvis, Roger L ; Bunton, Joseph H ; Olson, Jesse D ; Gorman, Brian P</creatorcontrib><description>The state of application of atom probe tomography to electronic materials is assessed. The benefits and challenges of the technique are discussed with regard to its impact on this field of materials science. Specimen preparation in particular is emphasized as the key to success with modern atom probes. Electronic materials referenced in this paper include components of complementary metal/oxide/semiconductor (CMOS) structures, compound semiconductors, and thin films for data storage and general applications. Many examples from recent work are provided as illustrations of the types of information that can be derived and the impact this information can have on the research, development, processing, and failure analysis of electronic materials.</description><identifier>ISSN: 1531-7331</identifier><identifier>EISSN: 1545-4118</identifier><identifier>DOI: 10.1146/annurev.matsci.37.052506.084239</identifier><language>eng</language><subject>CMOS ; Data storage ; Electronic materials ; Failure analysis ; Oxides ; Semiconductors ; Thin films ; Tomography</subject><ispartof>Annual review of materials research, 2007-01, Vol.37 (1), p.681-727</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a466t-3118c1f3dbd59afd4c1c4995381729cbef62155c5e37a95950528d6dfb0446413</citedby><cites>FETCH-LOGICAL-a466t-3118c1f3dbd59afd4c1c4995381729cbef62155c5e37a95950528d6dfb0446413</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4182,27924,27925</link.rule.ids></links><search><creatorcontrib>Kelly, Thomas F</creatorcontrib><creatorcontrib>Larson, David J</creatorcontrib><creatorcontrib>Thompson, Keith</creatorcontrib><creatorcontrib>Alvis, Roger L</creatorcontrib><creatorcontrib>Bunton, Joseph H</creatorcontrib><creatorcontrib>Olson, Jesse D</creatorcontrib><creatorcontrib>Gorman, Brian P</creatorcontrib><title>Atom Probe Tomography of Electronic Materials</title><title>Annual review of materials research</title><description>The state of application of atom probe tomography to electronic materials is assessed. The benefits and challenges of the technique are discussed with regard to its impact on this field of materials science. Specimen preparation in particular is emphasized as the key to success with modern atom probes. Electronic materials referenced in this paper include components of complementary metal/oxide/semiconductor (CMOS) structures, compound semiconductors, and thin films for data storage and general applications. Many examples from recent work are provided as illustrations of the types of information that can be derived and the impact this information can have on the research, development, processing, and failure analysis of electronic materials.</description><subject>CMOS</subject><subject>Data storage</subject><subject>Electronic materials</subject><subject>Failure analysis</subject><subject>Oxides</subject><subject>Semiconductors</subject><subject>Thin films</subject><subject>Tomography</subject><issn>1531-7331</issn><issn>1545-4118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAURS0EEqXwH7LBkuCXZzvxhKqqfEhFMJTZchwbgpK42AlS_z2p0p3p3uHovatDyC3QDICJe933Y7C_WaeHaJoMi4zynFOR0ZLlKM_IAjjjKQMoz48dIS0Q4ZJcxfhNKQghxYKkq8F3yXvwlU12vvOfQe-_Dol3yaa1Zgi-b0zyqgcbGt3Ga3LhprA3p1ySj8fNbv2cbt-eXtarbaqZEEOK008DDuuq5lK7mhkwTEqOJRS5NJV1IgfODbdYaMkln5aXtahdRRkTDHBJ7ua7--B_RhsH1TXR2LbVvfVjVFAgpZwyLP9HaZmDLJnECX2YURN8jME6tQ9Np8NhgtTRqTo5VbNThYWanarZKf4BK_lt1A</recordid><startdate>20070101</startdate><enddate>20070101</enddate><creator>Kelly, Thomas F</creator><creator>Larson, David J</creator><creator>Thompson, Keith</creator><creator>Alvis, Roger L</creator><creator>Bunton, Joseph H</creator><creator>Olson, Jesse D</creator><creator>Gorman, Brian P</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20070101</creationdate><title>Atom Probe Tomography of Electronic Materials</title><author>Kelly, Thomas F ; Larson, David J ; Thompson, Keith ; Alvis, Roger L ; Bunton, Joseph H ; Olson, Jesse D ; Gorman, Brian P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a466t-3118c1f3dbd59afd4c1c4995381729cbef62155c5e37a95950528d6dfb0446413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>CMOS</topic><topic>Data storage</topic><topic>Electronic materials</topic><topic>Failure analysis</topic><topic>Oxides</topic><topic>Semiconductors</topic><topic>Thin films</topic><topic>Tomography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kelly, Thomas F</creatorcontrib><creatorcontrib>Larson, David J</creatorcontrib><creatorcontrib>Thompson, Keith</creatorcontrib><creatorcontrib>Alvis, Roger L</creatorcontrib><creatorcontrib>Bunton, Joseph H</creatorcontrib><creatorcontrib>Olson, Jesse D</creatorcontrib><creatorcontrib>Gorman, Brian P</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Annual review of materials research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kelly, Thomas F</au><au>Larson, David J</au><au>Thompson, Keith</au><au>Alvis, Roger L</au><au>Bunton, Joseph H</au><au>Olson, Jesse D</au><au>Gorman, Brian P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atom Probe Tomography of Electronic Materials</atitle><jtitle>Annual review of materials research</jtitle><date>2007-01-01</date><risdate>2007</risdate><volume>37</volume><issue>1</issue><spage>681</spage><epage>727</epage><pages>681-727</pages><issn>1531-7331</issn><eissn>1545-4118</eissn><abstract>The state of application of atom probe tomography to electronic materials is assessed. The benefits and challenges of the technique are discussed with regard to its impact on this field of materials science. Specimen preparation in particular is emphasized as the key to success with modern atom probes. Electronic materials referenced in this paper include components of complementary metal/oxide/semiconductor (CMOS) structures, compound semiconductors, and thin films for data storage and general applications. Many examples from recent work are provided as illustrations of the types of information that can be derived and the impact this information can have on the research, development, processing, and failure analysis of electronic materials.</abstract><doi>10.1146/annurev.matsci.37.052506.084239</doi><tpages>47</tpages></addata></record>
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subjects CMOS
Data storage
Electronic materials
Failure analysis
Oxides
Semiconductors
Thin films
Tomography
title Atom Probe Tomography of Electronic Materials
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T03%3A34%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Atom%20Probe%20Tomography%20of%20Electronic%20Materials&rft.jtitle=Annual%20review%20of%20materials%20research&rft.au=Kelly,%20Thomas%20F&rft.date=2007-01-01&rft.volume=37&rft.issue=1&rft.spage=681&rft.epage=727&rft.pages=681-727&rft.issn=1531-7331&rft.eissn=1545-4118&rft_id=info:doi/10.1146/annurev.matsci.37.052506.084239&rft_dat=%3Cproquest_cross%3E1082198493%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1082198493&rft_id=info:pmid/&rfr_iscdi=true