Transparent conductive Nd-doped ZnO thin films
Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to t...
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| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2015-05, Vol.48 (19), p.195103-9 |
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| container_issue | 19 |
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| container_title | Journal of physics. D, Applied physics |
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| creator | Nistor, M Millon, E Cachoncinlle, C Seiler, W Jedrecy, N Hebert, C Perrière, J |
| description | Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display the wurtzite phase. Different epitaxial relationships between films and substrate as a function of growth pressure and substrate temperature were evidenced by asymmetric x-ray diffraction measurements. By varying PLD growth conditions, the films can be tuned to have either metallic or semiconductor characteristics, with good optical transmittance in the visible range. Moreover, a low-temperature metal-insulator transition may be observed in Nd-doped ZnO films grown under low oxygen pressure. Resistivities as low as 6 × 10−4 Ω cm and 90% optical transmittance in the visible range and different near-infrared transmittance are obtained with approximately 1.0-1.5 at.% Nd doping and growth temperature of approximately 500 °C. |
| doi_str_mv | 10.1088/0022-3727/48/19/195103 |
| format | Article |
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A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display the wurtzite phase. Different epitaxial relationships between films and substrate as a function of growth pressure and substrate temperature were evidenced by asymmetric x-ray diffraction measurements. By varying PLD growth conditions, the films can be tuned to have either metallic or semiconductor characteristics, with good optical transmittance in the visible range. Moreover, a low-temperature metal-insulator transition may be observed in Nd-doped ZnO films grown under low oxygen pressure. Resistivities as low as 6 × 10−4 Ω cm and 90% optical transmittance in the visible range and different near-infrared transmittance are obtained with approximately 1.0-1.5 at.% Nd doping and growth temperature of approximately 500 °C.</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/0022-3727/48/19/195103</identifier><identifier>CODEN: JPAPBE</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>Condensed Matter ; Diffraction ; Doping ; electrical properties ; Engineering Sciences ; Materials ; Materials Science ; metal-insulator transition ; Neodymium ; Opacity ; optical properties ; Physics ; pulsed laser deposition ; Sapphire ; Semiconductors ; Thin films ; Wurtzite ; Zinc oxide</subject><ispartof>Journal of physics. D, Applied physics, 2015-05, Vol.48 (19), p.195103-9</ispartof><rights>2015 IOP Publishing Ltd</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c444t-331f8abf0a7015a19d2536105e749000e385346158d426ec08b7a5728e4967f43</citedby><cites>FETCH-LOGICAL-c444t-331f8abf0a7015a19d2536105e749000e385346158d426ec08b7a5728e4967f43</cites><orcidid>0000-0001-6087-8737</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0022-3727/48/19/195103/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>230,314,776,780,881,27901,27902,53821,53868</link.rule.ids><backlink>$$Uhttps://hal.science/hal-01218114$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Nistor, M</creatorcontrib><creatorcontrib>Millon, E</creatorcontrib><creatorcontrib>Cachoncinlle, C</creatorcontrib><creatorcontrib>Seiler, W</creatorcontrib><creatorcontrib>Jedrecy, N</creatorcontrib><creatorcontrib>Hebert, C</creatorcontrib><creatorcontrib>Perrière, J</creatorcontrib><title>Transparent conductive Nd-doped ZnO thin films</title><title>Journal of physics. D, Applied physics</title><addtitle>JPhysD</addtitle><addtitle>J. Phys. D: Appl. Phys</addtitle><description>Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display the wurtzite phase. Different epitaxial relationships between films and substrate as a function of growth pressure and substrate temperature were evidenced by asymmetric x-ray diffraction measurements. By varying PLD growth conditions, the films can be tuned to have either metallic or semiconductor characteristics, with good optical transmittance in the visible range. Moreover, a low-temperature metal-insulator transition may be observed in Nd-doped ZnO films grown under low oxygen pressure. Resistivities as low as 6 × 10−4 Ω cm and 90% optical transmittance in the visible range and different near-infrared transmittance are obtained with approximately 1.0-1.5 at.% Nd doping and growth temperature of approximately 500 °C.</description><subject>Condensed Matter</subject><subject>Diffraction</subject><subject>Doping</subject><subject>electrical properties</subject><subject>Engineering Sciences</subject><subject>Materials</subject><subject>Materials Science</subject><subject>metal-insulator transition</subject><subject>Neodymium</subject><subject>Opacity</subject><subject>optical properties</subject><subject>Physics</subject><subject>pulsed laser deposition</subject><subject>Sapphire</subject><subject>Semiconductors</subject><subject>Thin films</subject><subject>Wurtzite</subject><subject>Zinc oxide</subject><issn>0022-3727</issn><issn>1361-6463</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqFkE9Lw0AQxRdRsFa_guQkeki7s_9zLEWtUOylXrws2-yGpqTZuJsU_PYmRARBEAYGht97M_MQugU8A6zUHGNCUiqJnDM1h6wvDpieoQlQAalggp6jyQ90ia5iPGCMuVAwQbNtMHVsTHB1m-S-tl3elieXvNrU-sbZ5L3eJO2-rJOirI7xGl0Uporu5rtP0dvT43a5Steb55flYp3mjLE2pRQKZXYFNhIDN5BZwvtjMHeSZf1uRxWnTABXlhHhcqx20nBJlGOZkAWjU_Qw-u5NpZtQHk341N6UerVY62GGgYACYCfo2fuRbYL_6Fxs9bGMuasqUzvfRQ2SYsykZAMqRjQPPsbgih9vwHoIUw856SEnzZSGTI9h9sK7UVj6Rh98F-r-e21_QbqxRQ-SP8B_3L8AQYN-qw</recordid><startdate>20150520</startdate><enddate>20150520</enddate><creator>Nistor, M</creator><creator>Millon, E</creator><creator>Cachoncinlle, C</creator><creator>Seiler, W</creator><creator>Jedrecy, N</creator><creator>Hebert, C</creator><creator>Perrière, J</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0001-6087-8737</orcidid></search><sort><creationdate>20150520</creationdate><title>Transparent conductive Nd-doped ZnO thin films</title><author>Nistor, M ; Millon, E ; Cachoncinlle, C ; Seiler, W ; Jedrecy, N ; Hebert, C ; Perrière, J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c444t-331f8abf0a7015a19d2536105e749000e385346158d426ec08b7a5728e4967f43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Condensed Matter</topic><topic>Diffraction</topic><topic>Doping</topic><topic>electrical properties</topic><topic>Engineering Sciences</topic><topic>Materials</topic><topic>Materials Science</topic><topic>metal-insulator transition</topic><topic>Neodymium</topic><topic>Opacity</topic><topic>optical properties</topic><topic>Physics</topic><topic>pulsed laser deposition</topic><topic>Sapphire</topic><topic>Semiconductors</topic><topic>Thin films</topic><topic>Wurtzite</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nistor, M</creatorcontrib><creatorcontrib>Millon, E</creatorcontrib><creatorcontrib>Cachoncinlle, C</creatorcontrib><creatorcontrib>Seiler, W</creatorcontrib><creatorcontrib>Jedrecy, N</creatorcontrib><creatorcontrib>Hebert, C</creatorcontrib><creatorcontrib>Perrière, J</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nistor, M</au><au>Millon, E</au><au>Cachoncinlle, C</au><au>Seiler, W</au><au>Jedrecy, N</au><au>Hebert, C</au><au>Perrière, J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transparent conductive Nd-doped ZnO thin films</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><stitle>JPhysD</stitle><addtitle>J. Phys. D: Appl. Phys</addtitle><date>2015-05-20</date><risdate>2015</risdate><volume>48</volume><issue>19</issue><spage>195103</spage><epage>9</epage><pages>195103-9</pages><issn>0022-3727</issn><eissn>1361-6463</eissn><coden>JPAPBE</coden><abstract>Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display the wurtzite phase. Different epitaxial relationships between films and substrate as a function of growth pressure and substrate temperature were evidenced by asymmetric x-ray diffraction measurements. By varying PLD growth conditions, the films can be tuned to have either metallic or semiconductor characteristics, with good optical transmittance in the visible range. Moreover, a low-temperature metal-insulator transition may be observed in Nd-doped ZnO films grown under low oxygen pressure. Resistivities as low as 6 × 10−4 Ω cm and 90% optical transmittance in the visible range and different near-infrared transmittance are obtained with approximately 1.0-1.5 at.% Nd doping and growth temperature of approximately 500 °C.</abstract><pub>IOP Publishing</pub><doi>10.1088/0022-3727/48/19/195103</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0001-6087-8737</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Condensed Matter Diffraction Doping electrical properties Engineering Sciences Materials Materials Science metal-insulator transition Neodymium Opacity optical properties Physics pulsed laser deposition Sapphire Semiconductors Thin films Wurtzite Zinc oxide |
| title | Transparent conductive Nd-doped ZnO thin films |
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