Design and fabrication of a 10 Gbps transimpedance amplifier-receiver for optical interconnects
In this paper, a transimpedance amplifier (TIA)-optical receiver (Rx) using two intersecting active feedback system with regulated-cascode input stage has been designed and fabricated for optical interconnects. The optical TIA-Rx chip is designed with 130 nm CMOS technology and operates up to 10 Gb/...
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| Veröffentlicht in: | Journal of computational electronics 2015-09, Vol.14 (3), p.669-674 |
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| container_issue | 3 |
| container_start_page | 669 |
| container_title | Journal of computational electronics |
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| creator | Sangirov, Jamshid Uddin, Mohammad Rakib Gulomjon, Sangirov Ukaegbu, Ikechi A. Lee, T. W. Park, H. H. |
| description | In this paper, a transimpedance amplifier (TIA)-optical receiver (Rx) using two intersecting active feedback system with regulated-cascode input stage has been designed and fabricated for optical interconnects. The optical TIA-Rx chip is designed with 130 nm CMOS technology and operates up to 10 Gb/s data rate. The TIA-Rx chip core occupies an area of
0.051
mm
2
with power consumption of 16.9 mW at 1.3 V. The measured input-referred noise of optical TIA-Rx is
20
pA
/
√
Hz
with a 3-dB bandwidth of 6.9 GHz. The proposed TIA-Rx achieved a high gain-bandwidth product per DC power figure of merit of
408
GHz
Ω
/
mW
. |
| doi_str_mv | 10.1007/s10825-015-0706-0 |
| format | Article |
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0.051
mm
2
with power consumption of 16.9 mW at 1.3 V. The measured input-referred noise of optical TIA-Rx is
20
pA
/
√
Hz
with a 3-dB bandwidth of 6.9 GHz. The proposed TIA-Rx achieved a high gain-bandwidth product per DC power figure of merit of
408
GHz
Ω
/
mW
.</description><identifier>ISSN: 1569-8025</identifier><identifier>EISSN: 1572-8137</identifier><identifier>DOI: 10.1007/s10825-015-0706-0</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Amplification ; Amplifiers ; Bandwidths ; Chips ; CMOS ; Design ; Design engineering ; Direct current ; Electrical Engineering ; Electrostatic discharges ; Engineering ; Figure of merit ; High gain ; Mathematical and Computational Engineering ; Mathematical and Computational Physics ; Mechanical Engineering ; Noise ; Optical and Electronic Materials ; Optical interconnects ; Optical receivers ; Power consumption ; Receivers ; Theoretical ; Transistors</subject><ispartof>Journal of computational electronics, 2015-09, Vol.14 (3), p.669-674</ispartof><rights>Springer Science+Business Media New York 2015</rights><rights>Springer Science+Business Media New York 2015.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c419t-9dcbf50c4cf80a8a31c1a4b0d66f7ce67c254551b4b6ed4d98d46b760e8035a63</citedby><cites>FETCH-LOGICAL-c419t-9dcbf50c4cf80a8a31c1a4b0d66f7ce67c254551b4b6ed4d98d46b760e8035a63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10825-015-0706-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2918267282?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,780,784,21388,27924,27925,33744,33745,41488,42557,43805,51319,64385,64387,64389,72341</link.rule.ids></links><search><creatorcontrib>Sangirov, Jamshid</creatorcontrib><creatorcontrib>Uddin, Mohammad Rakib</creatorcontrib><creatorcontrib>Gulomjon, Sangirov</creatorcontrib><creatorcontrib>Ukaegbu, Ikechi A.</creatorcontrib><creatorcontrib>Lee, T. W.</creatorcontrib><creatorcontrib>Park, H. H.</creatorcontrib><title>Design and fabrication of a 10 Gbps transimpedance amplifier-receiver for optical interconnects</title><title>Journal of computational electronics</title><addtitle>J Comput Electron</addtitle><description>In this paper, a transimpedance amplifier (TIA)-optical receiver (Rx) using two intersecting active feedback system with regulated-cascode input stage has been designed and fabricated for optical interconnects. The optical TIA-Rx chip is designed with 130 nm CMOS technology and operates up to 10 Gb/s data rate. The TIA-Rx chip core occupies an area of
0.051
mm
2
with power consumption of 16.9 mW at 1.3 V. The measured input-referred noise of optical TIA-Rx is
20
pA
/
√
Hz
with a 3-dB bandwidth of 6.9 GHz. The proposed TIA-Rx achieved a high gain-bandwidth product per DC power figure of merit of
408
GHz
Ω
/
mW
.</description><subject>Amplification</subject><subject>Amplifiers</subject><subject>Bandwidths</subject><subject>Chips</subject><subject>CMOS</subject><subject>Design</subject><subject>Design engineering</subject><subject>Direct current</subject><subject>Electrical Engineering</subject><subject>Electrostatic discharges</subject><subject>Engineering</subject><subject>Figure of merit</subject><subject>High gain</subject><subject>Mathematical and Computational Engineering</subject><subject>Mathematical and Computational Physics</subject><subject>Mechanical Engineering</subject><subject>Noise</subject><subject>Optical and Electronic Materials</subject><subject>Optical interconnects</subject><subject>Optical receivers</subject><subject>Power consumption</subject><subject>Receivers</subject><subject>Theoretical</subject><subject>Transistors</subject><issn>1569-8025</issn><issn>1572-8137</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNp1kE1LxDAQhosouK7-AG8BL16qM9k2SY-yfsKCFz2HNJ0sWbpJTbqC_94uKwiCh2Hm8Lwvw1MUlwg3CCBvM4LidQk4jQRRwlExw1ryUuFCHu9v0ZQKeH1anOW8AeDAK5wV-p6yXwdmQsecaZO3ZvQxsOiYYQjsqR0yG5MJ2W8H6kywxMx26L3zlMpElvwnJeZiYnEYp3TPfBgp2RgC2TGfFyfO9Jkufva8eH98eFs-l6vXp5fl3aq0FTZj2XS2dTXYyjoFRpkFWjRVC50QTloS0vK6qmtsq1ZQV3WN6irRSgGkYFEbsZgX14feIcWPHeVRb3221PcmUNxljRJVIxEETujVH3QTdylM32neoOJCcsUnCg-UTTHnRE4PyW9N-tIIeq9cH5TrSbneK9cwZfghkyc2rCn9Nv8f-gZMroO1</recordid><startdate>20150901</startdate><enddate>20150901</enddate><creator>Sangirov, Jamshid</creator><creator>Uddin, Mohammad Rakib</creator><creator>Gulomjon, Sangirov</creator><creator>Ukaegbu, Ikechi A.</creator><creator>Lee, T. 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W.</au><au>Park, H. H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design and fabrication of a 10 Gbps transimpedance amplifier-receiver for optical interconnects</atitle><jtitle>Journal of computational electronics</jtitle><stitle>J Comput Electron</stitle><date>2015-09-01</date><risdate>2015</risdate><volume>14</volume><issue>3</issue><spage>669</spage><epage>674</epage><pages>669-674</pages><issn>1569-8025</issn><eissn>1572-8137</eissn><abstract>In this paper, a transimpedance amplifier (TIA)-optical receiver (Rx) using two intersecting active feedback system with regulated-cascode input stage has been designed and fabricated for optical interconnects. The optical TIA-Rx chip is designed with 130 nm CMOS technology and operates up to 10 Gb/s data rate. The TIA-Rx chip core occupies an area of
0.051
mm
2
with power consumption of 16.9 mW at 1.3 V. The measured input-referred noise of optical TIA-Rx is
20
pA
/
√
Hz
with a 3-dB bandwidth of 6.9 GHz. The proposed TIA-Rx achieved a high gain-bandwidth product per DC power figure of merit of
408
GHz
Ω
/
mW
.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10825-015-0706-0</doi><tpages>6</tpages></addata></record> |
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| subjects | Amplification Amplifiers Bandwidths Chips CMOS Design Design engineering Direct current Electrical Engineering Electrostatic discharges Engineering Figure of merit High gain Mathematical and Computational Engineering Mathematical and Computational Physics Mechanical Engineering Noise Optical and Electronic Materials Optical interconnects Optical receivers Power consumption Receivers Theoretical Transistors |
| title | Design and fabrication of a 10 Gbps transimpedance amplifier-receiver for optical interconnects |
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